• Journal of Power Electronics
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• v.19 no.2
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• pp.353-362
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• 2019

To address the problem of circulating current loss in the traditional zero-current switching (ZCS) full-bridge (FB) DC/DC converter, a ZCS FB DC/DC converter topology and modulation strategy is proposed in this paper. The strategy can achieve ZCS turn on and zero-voltage and zero-current switching (ZVZCS) turn off for the primary switches and realize ZVZCS turn on and zero-voltage switching (ZVS) turn off for the auxiliary switches. Moreover, its resonant circuit power is small. Compared with the traditional phase shift full-bridge converter, the new converter decreases circulating current loss and does not increase the current stress of the primary switches and the voltage stress of the rectifier diodes. The diodes turn off naturally when the current decreases to zero. Thus, neither reverse recovery current nor loss on diodes occurs. In this paper, we analyzed the operating principle, steady-state characteristics and soft-switching conditions and range of the converter in detail. A 740 V/1 kW, 100 kHz experimental prototype was established, verifying the effectiveness of the converter through experimental results.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.773-776
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• 1993

The thyristor turn-off model plays an important part in the design of thyristor snubber circuit. However, it is difficult to determine the thyristor turn-off characteristics. In this paper two methods to establish the simple thyristor turn-off model are proposed based on the reverse recovery characteristics given in the data sheets. Using the simple thyristor turn-off model, the optimum thyristor snubber circuit design procedures are presented considering maximum voltage spike, maximum reverse dv/dt, and turn-off loss.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.501-507
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• 2014

This paper describes the improvement in converter efficiency by reducing the switching loss and by recovering the snubber stored energy. A capacitive based passive regenerative snubber circuit is modeled for a dc-dc boost converter. The proposed snubber is mainly used to reduce the turn-off loss of the main switch. The energy recovery process and the turn-off loss depends on the size of the snubber capacitance; therefore, the conventional and the proposed converters are designed for high and low input voltage conditions with different sizes of the snubber capacitance. Based on the results obtained, the snubber capacitors are classified as small, normal and large snubbers. The Matlab simulation results obtained are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.327-330
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• 2003

In this work, current-voltage characteristics with time of NPT(Non-PunchThrough) IGBT is proposed during turn-on and turn-off by using analytical method. From the results, power loss at turn-off dominates the total electrical loss with respect to that at turn-on. The results have been compared with those of PSPICE and show the identical trend of power loss with each other.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.3
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• pp.168-173
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• 2013

In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.137-140
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• 2000

This paper proposes an improved soft switching two-transistor forward converter which uses a novel lossless snubber circuit to effectively control the turn-off dv/dt rate of the main transistors. In the proposed soft switching implementation the turn-off voltage traces across the main two transistors are almost the same contributing to reduce the total capacitive turn-on loss and the snubber current is divided into the two transistors resulting in distributed thermal stresses

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.417-420
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• 1998

In this paper the formation mechanism of tail current is analyzed and its effect on GTO turn-off performance is given. The conclusion is that the large tail current will considerably increase the turn-off loss $E_{off}$ and cause the re-triggering during GTO's off-switching, therefore the best design criterion is that the tail current of power GTO must be as low as possible.w as possible.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.391-393
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• 2008

A modified boost converter with magnetic coupling is presented to reduce the reverse recovery loss while maintaining low conduction loss of the rectifiers. By utilizing a coupled inductor and a set of diodes, the current passing the boost rectifier is transferred to an auxiliary loop before turn-off, allowing low di/dt for reduced recovery loss. Moreover, the boost inductor is brought inside the bridge rectifier to reduce conduction loss by decreasing the number of conducting diodes during switch turn-off. Experimental results of a 500W prototype are provided to verify the increase in efficiency and validity of the proposed converter.