• Title/Summary/Keyword: Tunnel current effect

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Channel Doping Effect at Source-Overlapped Gate Tunnel Field-Effect Transistor (소스 영역으로 오버랩된 TFET의 Channel 도핑 변화 특성)

  • Lee, Ju-Chan;Ahn, Tae-Jun;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.05a
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    • pp.527-528
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    • 2017
  • Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

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Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability

  • Lee, Jang Woo;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.271-276
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    • 2017
  • The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

Effects of Annealing Temperature on the Local Current Conduction of Ferromagnetic Tunnel Junction (열처리에 따른 강자성 터널링 접합의 국소전도특성)

  • Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku;Li, Ying;Park, Bum-Chan;Kim, Cheol-Gi;Kim, Chong-Oh
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.233-238
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    • 2003
  • Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation

  • Yu, Yun Seop;Najam, Faraz
    • Journal of information and communication convergence engineering
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    • v.19 no.4
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    • pp.263-268
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    • 2021
  • Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

Wind tunnel investigation on wind characteristics of flat and mountainous terrain

  • Li, Jiawu;Wang, Jun;Yang, Shucheng;Wang, Feng;Zhao, Guohui
    • Wind and Structures
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    • v.35 no.4
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    • pp.229-242
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    • 2022
  • Wind tunnel test is often adopted to assess the site-specific wind characteristics for the design of bridges as suggested by current design standards. To investigate the wind characteristics of flat and mountainous terrain, two topographic models are tested in a boundary layer wind tunnel. The wind characteristics, including the vertical and horizontal mean wind speed distributions, the turbulence intensity, and the wind power spectra, are presented. They are investigated intensively in present study with the discussions on the effect of wind direction and the effect of topography. It is indicated that for flat terrain, the wind direction has negligible effect on the wind characteristics, however, the assumption of a homogenous wind field for the mountainous terrain is not applicable. Further, the non-homogeneous wind field can be defined based on a proposed approach if the wind tunnel test or on-site measurement is performed. The calculated turbulence intensities and wind power spectra by using the measured wind speeds are also given. It is shown that for the mountainous terrain, engineers should take into account the variability of the wind characteristics for design considerations.

Combination of engineering geological data and numerical modeling results to classify the tunnel route based on the groundwater seepage

  • Aalianvari, A.
    • Geomechanics and Engineering
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    • v.13 no.4
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    • pp.671-683
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    • 2017
  • Groundwater control is a significant issue in most underground construction. An estimate of the inflow rate is required to size the pumping system, and treatment plant facilities for construction planning and cost assessment. An estimate of the excavation-induced drawdown of the initial groundwater level is required to evaluate potential environmental impacts. Analytical and empirical methods used in current engineering practice do not adequately account for the effect of the jointed-rock-mass anisotropy and heterogeneity. The impact of geostructural anisotropy of fractured rocks on tunnel inflows is addressed and the limitations of analytical solutions assuming isotropic hydraulic conductivity are discussed. In this paper the unexcavated Zagros tunnel route has been classified from groundwater flow point of view based on the combination of observed water inflow and numerical modeling results. Results show that, in this hard rock tunnel, flow usually concentrates in some areas, and much of the tunnel is dry. So the remaining unexcavated Zagros tunnel route has been categorized into three categories including high Risk, moderately risk and low risk. Results show that around 60 m of tunnel (3%) length can conduit the large amount of water into tunnel and categorized into high risk zone and about 45% of tunnel route has moderately risk. The reason is that, in this tunnel, most of the water flows in rock fractures and fractures typically occur in a clustered pattern rather than in a regular or random pattern.

A Study on Current Extent of Damage of Road Tunnel Lining in Cold Regions (Gangwon-do) (한랭지역(강원권)에서의 도로터널 라이닝부 피해 현황 연구)

  • Jin, Hyunwoo;Hwang, Youngcheol
    • Journal of the Korean GEO-environmental Society
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    • v.18 no.1
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    • pp.49-58
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    • 2017
  • Due to low annual average temperature, road tunnel lining in domestic cold region (Gangwon province) experiences durability problems. The financial and human damage due to cracks, breakout, exfoliation and water leakage increases every year. However, domestic research on effect of temperature on road tunnel lining damage is insufficient. Thus, this research has investigated 70 tunnels located in cold region (Gangwon-do) to analyze damage status. Furthermore, by contrasting damage on tunnels in relatively warm Gangneung area with those in relatively cold Hongcheon area, the effect of temperature on road tunnel lining damage was analyzed.

Tunneling Magnetoresistance in Si/$SiO_2$/NiFe/$Al_2$$O_3$/Co Thin Films (Si/$SiO_2$/NiFe/$Al_2$$O_3$/Co 박막의 투과자기저항 특성 연구)

  • 현준원;백주열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.934-940
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    • 2001
  • Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

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Gate Tunneling Current and QuantumEffects in Deep Scaled MOSFETs

  • Choi, Chang-Hoon;Dutton, Robert W.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.27-31
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    • 2004
  • Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

Numerical Study on High-Speed railway Tunnel Entrance Hood (고속철도 터널 입구후드에 관한 수치해석적 연구)

  • 김희동;김동현
    • Proceedings of the KSR Conference
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    • 1998.05a
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    • pp.604-611
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    • 1998
  • High-speed railway trains entering and leaving tunnels generate finite amplitude pressure wave which propagate back and forth along the tunnels, reflecting at the open ends of the tunnels and at other discontinuities such as ventilation shafts and the train themselves. In present day railways, the magnitudes of the pressure waves are much too small to cause structual damage, but they are a serious potential source of aural discomport for passengers on unsealed trains. Almost always do the pressure waves propagating along the tunnels lead to a hazardous impulse noise near the exit portal of the tunnel. In order to alleviate such undesirable phenomena, some control strategies have been applied to the compression wave propagating inside the tunnel. The objective of the current work is to investigate the effect of tunnel entrance hoods on the entry compression wave at the vicinity of the tunnel entrance. Three types of entrance hoods were tested by the numerical method using the characteristics of method for a wide range of train speeds. The results show that the maximum pressure gradient of compression wave can be considerably reduced by the tunnel entrance hood. Desirable hood shape for reduction of the pressure transients and impulse noise was found to be of abrupt type hood with its cross-sectional area 2.5times the tunnel area.

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