JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability

  • Lee, Jang Woo (Department of Electronic Engineering, Sogang University) ;
  • Choi, Woo Young (Department of Electronic Engineering, Sogang University)
  • Received : 2016.08.25
  • Accepted : 2017.02.26
  • Published : 2017.04.30
Download PDF
⟨ Previous Next ⟩

Abstract

The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

Keywords

References

  1. W. Y. Choi, B. G. Park, J. D. Lee and T. J. K. Liu, "Tunneling Field-Effect Transistors (TFETs) with Subthreshold Swing (SS) Less Than 60 mV/dec," IEEE Electron Device Letters, vol. 28, no. 8, pp.743-745, 2007. https://doi.org/10.1109/LED.2007.901273
  2. A. M. Ionescu, H. Riel, "Tunnel field-effect transistors as energy-efficient electronic switches," Nature, vol. 479, no. 7373, pp.329-337, 2011. https://doi.org/10.1038/nature10679
  3. W. G. Vandenberghe, A. S. Verhulst, B. Soree, W. Magnus, Guido Groeseneken, Q. Smets, M. Heyns, and M. V. Fischetti, "Figure of merit for and identification of sub-60mV/decade devices," Applied Physics Letters, vol. 102, no. 1, pp.013510, 2013. https://doi.org/10.1063/1.4773521
  4. W. Cao, D. Sarkar, Y. Khatami, J. Kang, and K. Banerjee, "Subthreshold-swing physics of tunnel field-effect transistors," AIP Advances, vol. 4, no. 6, 2014.
  5. U. E. Avci, D. H. Morris, and I. A. Young, "Tunnel Field-Effect Transistors: Prospects and Challenges," Journal of the Electron Device Society, vol. 3, no. 3, pp.88-95. 2015. https://doi.org/10.1109/JEDS.2015.2390591
  6. J. Knoch, S. Mantl, J. Appenzeller, "Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices," Solid-State Electronics, vol. 51, no. 4, pp.572-578, 2007. https://doi.org/10.1016/j.sse.2007.02.001
  7. K. Ganapathi, Y. Yoon, and S. Salahuddin, "Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance," Applied Physics Letters, vol. 97, no. 3, 2010.
  8. L. D. Michielis, A. M. Ionescu "Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current," Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011.
  9. S. W. Kim, J. H. Kim, T. J. K. Liu, W. Y. Choi, and B. G. Park, "Demonstration of L-Shaped Tunnel Field-Effect Transistors," IEEE Transactions on Electron Devices. vol. 63, no. 4, pp.1774-1778. 2016. https://doi.org/10.1109/TED.2015.2472496
  10. C. Alper, P. Palestri, J. L. Padilla, A. M. Ionescu, "The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization," IEEE Transactions on Electron Devices, vol. 64, no. 6, 2016.
  11. Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T.Matsukawa, K. Endo, S. O'uchi, Y. X. Liu, M. Masahara, and H. Ota, "Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes," Japanese Journal of Applied Physics, vol. 52, no. 4S, p.04CC25, 2013. https://doi.org/10.7567/JJAP.52.04CC25
  12. Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, M. Masahara, and H. Ota, "Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations," IEEE Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013.
  13. Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T. Matsukawa, K. Endo, S. O'uchi, Y. X. Liu, M. Masahara, and H. Ota, "Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect," IEEE Electron Device Letters, vol. 35, no. 7, 2014.
  14. Sentaurus Device User Guide Version: H-2013.03, Synopsys Inc., Mountain View, CA, USA, 2013.
  15. K-. H Kao, A. S. Verhulst, W. G. Vandenberghe, B. Soree, G. Groeseneken, and K. D. Meyer, "Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs", IEEE Transactions on Electron Devices, vol. 59, no. 2, 2012.
  16. S. K. Kim, W. Y. Choi, "Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)," Solid-State Electronics, vol. 116, pp.88-94, 2016. https://doi.org/10.1016/j.sse.2015.11.037
  17. S. W. Kim, W. Y. Choi, M. C. Sun, and B. G. Park, "Investigation on the Corner Effect of L-Shaped Tunneling Field-Effect Transistors and Their Fabrication Method", Journal of Nanoscience and Nanotechnology, vol. 13, no. 9, 2013.