• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.86-86
• /
• 1993

• 자원환경지질
• /
• 제15권4호
• /
• pp.221-233
• /
• 1982

Ssangjeon tungsten ore deposits is a complex pegmatite deposits embedded along the contact between pre-Cambrian Buncheon granite gneiss and amphibolite. This pegmatite vein developed 2 km along the strike and thickness varies from 10m to 40m. Mineral constituent of the normal pegmatite are quartz, microcline, plagioclase, muscovite, biotite, tourmaline and garnet. The vein paragenesis is complicated by repeated deposition of quartz but three distinct depositional stage can be recognized. Quartz A stage is the stage of the earliest milky white quartz deposition as a rock forming mineral of normal pegmatite. Quartz B stage is the stage of gray to dark gray quartz replace earlier formed normal pegmatite minerals. Quartz C stage is the stage of latest white translucent massive quartz replace quartz A and B. Tungsten ore minerals and other sulfide minerals were precipitated during quartz B stage. Ore minerals are ferberite and scheelite. Minor amount of molybdenite, arsenopyrite, pyrrhotite, pyrite, chalcopyrite, sphalerite, galena, pentlandite, bismuthinite, native bismuth and marcasite accompanied. Fluid inclusion in quartz A and B are gaseous inclusions and liquid inclusions are contained in quartz C as a primary inclusions. Salinity of inclusions in quartz A and B ranges from 4.5 to 9.5 wt. % and from 5.1 to 6.0 wt. % equivalent NaCl respectively. Homogenization temperature of quartz A; quartz B and quartz C ranges from 415 to $465^{\circ}C$, from 397 to $441^{\circ}C$ and from 278 to $357^{\circ}C$. $CO_2$ content of the ore fluid increased at the ends of quartz B stage.

• 한국방사선학회논문지
• /
• 제15권7호
• /
• pp.965-973
• /
• 2021

방사선 치료는 고에너지 X선을 최소 20 Gy에서 80 Gy까지 다양하게 조사되기 때문에 종양이 위치하는 국소부위에 고선량을 투여하며 일부 정상조직의 여러 부작용이 예상 된다. 현재 임상에서는 정상조직의 차폐를 위한 노력으로 대표적인 재료인 납을 사용하고 있지만 납은 인체에 유해한 중금속으로 분류되고 있으며 다량의 피부접촉은 중독을 유발할 수 있다. 따라서 본 연구는 FDM(Fused Deposition Modeling)방식의 3차원 프린터의 재료 Tungsten, Brass, Copper을 이용하여 납의 한계점을 보완 할 수 있는 측정시트를 제작하고 투과성능을 알아보고자 한다. 3D 프린터를 이용해 Tungsten 혼합 필라멘트 투과측정 시트 크기는 70 × 70 mm, 두께는 1, 2, 4 mm로 제작하였으며 제작한 측정시트의 투과성능을 확인하기 위해 선형가속기 (TrueBeam STx, S/N: 1187)에서 발생된 6, 15 MV을 Water Phantom과 Ion chamber (FC-65G), elcetrometer (PTW UNIDOSE)을 사용하여 SSD 100 cm, 물 속 5 cm에서 100 MU를 조사하여 측정하고 투과성능을 평가하였다. 각 소재의 측정시트를 1 mm씩 증가시킨 결과 6 MV에서는 Tungsten 시트의 경우 3.8~3.9 cm일때의 시트는 기존 납의 차폐체 두께 6.5 cm 보다 얇으며, 15 MV에서는 Tungsten 시트의 경우 4.5~4.6 cm일 때 시트는 기존 납의 차폐체 두께 7 cm 보다 얇으며 동등한 성능을 확인할 수 있었다. 본 연구를 통하여 Tungsten 합금 필라멘트을 이용하여 제작한 투과측정 시트는 고에너지 영역에서의 투과 차폐 가능성을 확인하였으며. 대체품으로써의 사용가능성 또한 우수함을 확인하였다, 향후 3D 프린팅 기술로 차폐제 제작을 위한 기초자료로 제공할 수 있을 것으로 사료 된다.

• 한국진공학회지
• /
• 제1권2호
• /
• pp.277-285
• /
• 1992

플라즈마 화학기상증착법과 저압 화학기상증착법을 사용하여 실리콘 기판 위에 텅 스텐 박막을 증착하였다. 반응기체로 WF6를 사용하였으며 환원기체로는 SiH4를 사용하였다. 플라즈마 증착법에 의한 텅스텐 박막의 성장은 환원기체의 유무에 상관없이 주로 기상 반응 에 의한 텅스텐 덩어리들의 증착에 의하여 이루어졌으며 비교적 균일도가 낮은 박막표면을 이루었다. 저압 화학증착법의 경우 환원기체를 사용하지 않았을 때에는 실리콘 기판에 의한 제한된 환원반응에 의해 텅스텐이 증착되었으나, 환원기체를 사용했을 때에는 초기의 실리 콘 기판에 의한 환원반응과 이어 일어나는 SiH4 기체와의 불균일계 환원반응의 두 단계반응 에 의하여 텅스텐 박막 증착이 이루어졌다. 저압 화학증착법의 경우 텅스텐 박막의 특성은 플라즈마 증착법에서 보다 우수하였으며 박막 성장은 island by island 양식을 따르는 것으 로 추정되었다. 박막은 $\alpha$-W의 체심입방 구조로 이루어졌으며 박막이 성장함에 따라 단결정 구조가 증가하였다.

• 한국전기전자재료학회논문지
• /
• 제16권1호
• /
• pp.1-4
• /
• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.659-662
• /
• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• 한국표면공학회지
• /
• 제35권2호
• /
• pp.122-128
• /
• 2002

This study was conducted to synthesize the diamond like carbon films by plasma enhanced chemical vapor deposition (PECVD). The effects of gas composition on growth and mechanical properties of the films were investigated. A little amount of hydrogen or oxygen were added to base gas mixture of methane and argon. Methane dissociation and diamond like carbon nucleation were enhanced by installing negatively bias grid near substrate. The deposited films were indentified as hard diamond like carbon films by micro-Raman spectroscopy. The surface and fractured cross section of the films which were observed by scanning electron microscopy showed that film growth is very slow as about 0.3$\mu\textrm{m}$/hour, and relatively uniform with hydrogen addition. Vickers hardness of tungsten carbide (WC) cutting tool increased from about 1000 to 1600~1800 by deposition of DLC film, that of commercial TiN coated tool was about 1270. In cutting test of aluminum 6061 alloy, DLC coated cutting tool showed 1/3 or lower crater and flank wear than TiN coated or non-coated WC cutting tools.

• Applied Microscopy
• /
• 제48권4호
• /
• pp.122-125
• /
• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.16.1-16.1
• /
• 2011

Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

• 한국자기학회지
• /
• 제15권2호
• /
• pp.130-132
• /
• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.