Journal of the Korean Magnetics Society (한국자기학회지)

The Korean Magnetics Society (한국자기학회)
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Diffusion Barrier Properties of W-C-N Thin Film between La0.67Sr0.33MnO3 and Si

  • So, J.S. (Dept. of Nano & Electronic Physics, Kookmin University) ;
  • Kim, S.Y. (Dept. of Nano & Electronic Physics, Kookmin University) ;
  • Kang, K.B. (Dept. of Nano & Electronic Physics, Kookmin University) ;
  • Song, M.K. (Dept. of Nano & Electronic Physics, Kookmin University) ;
  • Lee, C.W. (Dept. of Nano & Electronic Physics, Kookmin University)
  • Published : 2005.04.01
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Abstract

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

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References

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