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http://dx.doi.org/10.4313/JKEM.2003.16.1.001

SiH4 Soak Effects in the W plug CVD Process  

이우선 (조선대학교 공과대학 전기공학과)
서용진 (대불대학교 전기전자공학부)
김상용 (아남반도체)
박진성 (조선대학교 공과대학 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.1, 2003 , pp. 1-4 More about this Journal
Abstract
The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.
Keywords
$SiH_4$soak; Tungsten (W) plug; Chemical vapor deposition; Ti/TiN barrier metal; $WF_6$ attack; Via contact resistance;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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