• 제목/요약/키워드: Triple-well

검색결과 296건 처리시간 0.025초

Deep Submicron급 CMOS 디바이스에서 Triple Well 형성과 래치업 면역 향상에 관한 연구 (A Study on Improvement Latch-up immunity and Triple Well formation in Deep Submicron CMOS devices)

  • 홍성표;전현성;강효영;윤석범;오환술
    • 전자공학회논문지D
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    • 제35D권9호
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    • pp.54-61
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    • 1998
  • Deep submicron급 CMOS디바이스에서 래치업 면역특성을 향상시키기 위한 새로운 Triple well구조를 제안하였다. Triple well에서 이온주입 에너지와 도즈량 변화에 따른 최적인 래치업 면역을 위한 공정조건을 확립하고 이것을 기존의 Twin well구조와 비교분석하였다. 공정은 공정시뮬레이터인 ATHENA로 소자를 제작하여 도핑프로파일과 구조를 해석하고 래치업 특성은 소자시뮬레이터인 ATLAS를 사용하였다. Triple well과 Twin well의 구조에서 공정상의 차이가 도핑프로파일에 미치는 영향과 프로파일 형태가 래치업 특성에 미치는 영향을 규명하였다. Triple well구조에서 p-well이온주입에너지 2.5MeV, 도즈량 1×10/sup 14/[cm/sup -2/]일 때 트리거 전류가 2.5[mA/${\mu}{m}$]로 매우 큰 래치업 면역특성을 얻었다.

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고에너지 이온주입에 의한 triple-well과 twin-well 구조에서 래치업 예방을 위한 해석 (An analysis of latch-u immunity on triple-well and twin-well architecgure using a high energy ion implanttion)

  • 홍성표;전현성;김중연;노병규;조재영;오환술
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.445-448
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    • 1998
  • 본 논문은 triple-well과 twin-well에서의 고에너지 이온주입 에너지와 도즈량 변화에 따른 래치업 특성을 비교하였다. 공정시뮬레이터인 ATHENA로 소자를 제작하고 도핑프로파일 형태와 구조를 조사한 후, 래치업 특성은 소자 시뮬레이터인 ATLAS를 이용하였다. triple-well 공정이 마스크 스텝수를 줄이고, 이온주입 후 열처리시간을 단축하며 별도의 열처리 공정없이 도핑르로파일을 넓은 형태로 분포시켜 래치업 면역특성이 매우 좋은 결과를 얻었다.

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MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결합제어 (Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation)

  • 정희석;고무순;김대영;류한권;노재상
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어 (Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation)

  • 정희석;고무순;김대영;류한권;노재상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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피타고라스의 세 수 (On the Pythagorean triple)

  • 박웅배;박혜숙
    • 한국수학교육학회지시리즈A:수학교육
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    • 제41권2호
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    • pp.227-231
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    • 2002
  • The Pythagorean theorem and Pythagorean triple are well known. We know some Pythagorean triples, however we don't Cow well that every natural number can belong to some Pythagorean triple. In this paper, we show that every natural number, which is not less than 2, can be a length of a leg(a side opposite the acute angle in a right triangle) in some right triangle, and list some Pythagorean triples.

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ON SPLIT LEIBNIZ TRIPLE SYSTEMS

  • Cao, Yan;Chen, Liangyun
    • 대한수학회지
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    • 제54권4호
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    • pp.1265-1279
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    • 2017
  • In order to study the structure of arbitrary split Leibniz triple systems, we introduce the class of split Leibniz triple systems as the natural extension of the class of split Lie triple systems and split Leibniz algebras. By developing techniques of connections of roots for this kind of triple systems, we show that any of such Leibniz triple systems T with a symmetric root system is of the form $T=U+{\sum}_{[j]{\in}{\Lambda}^1/{\sim}}I_{[j]}$ with U a subspace of $T_0$ and any $I_{[j]}$ a well described ideal of T, satisfying $\{I_{[j]},T,I_{[k]}\}=\{I_{[j]},I_{[k]},T\}=\{T,I_{[j]},I_{[k]}\}=0 \text{ if }[j]{\neq}[k]$.

부상화염에서 예혼합화염과 삼지화염의 천이적 거동(II) (A Transitional Behavior of a Premixed Flame and a Triple Flame in a Lifted Flame(II))

  • 장준영;김태권
    • 대한기계학회논문집B
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    • 제29권3호
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    • pp.376-383
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    • 2005
  • In the paper we investigate characteristics of a transitional behavior from a premixed flame to a triple flame in a lifted flame according to the change of equivalence ratio. In previous study, we showed that the stabilized laminar lifted flame regime is categorized by regimes of premixed flame, triple flame and critical flame. A gas-chromatograph is used to measure concentration field, a smoke-wire system is used to measure streak line, and a PIV system is used to measure velocity field in lifted flame. In the visualization experiment of smoke wire, the flow divergence and redirection reappeared in premixed flame as well as triple flame. Thus we cannot express the flame front of lifted flame has a behavior of triple flame with only flow divergence and redirection. In PIV measurement, flow velocity for those three flames has minimum value at the tip of flame front. To differentiate triple flame and premixed flame, $\Phi$ value of partially premixed fraction is employed. The partially premixed fraction $\Phi$ was constant in premixed flame. In critical flame small gradient appears over the whole regime. In triple flame, typical diffusion flame shape is obtained as parabolic distribution type due to diffusion flame trailing.

ON THE STRUCTURE OF GRADED LIE TRIPLE SYSTEMS

  • Martin, Antonio Jesus Calderon
    • 대한수학회보
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    • 제53권1호
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    • pp.163-180
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    • 2016
  • We study the structure of an arbitrary graded Lie triple system $\mathfrak{T}$ with restrictions neither on the dimension nor the base field. We show that $\mathfrak{T}$ is of the form $\mathfrak{T}=U+\sum_{j}I_j$ with U a linear subspace of the 1-homogeneous component $\mathfrak{T}_1$ and any $I_j$ a well described graded ideal of $\mathfrak{T}$, satisfying $[I_j,\mathfrak{T},I_k]=0$ if $j{\neq}k$. Under mild conditions, the simplicity of $\mathfrak{T}$ is characterized and it is shown that an arbitrary graded Lie triple system $\mathfrak{T}$ is the direct sum of the family of its minimal graded ideals, each one being a simple graded Lie triple system.