• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.9
• /
• pp.54-61
• /
• 1998

A new Triple well structure is proposed for improved latch-up immunity at deep submicron CMOS device. Optimum latch-up immunity process condition is established and analyzed with varying ion implantation energy and amount of dose and also compared conventional twin well structure. Doping profile and structure are investigated using ATHENA which is process simulator, and then latch-up current is calculated using ATLAS which is device simulator. Two types of different process are affected by latch-up characteristics and shape of doping profiles. Finally, we obtained the best latch-up immunity with 2.5[mA/${\mu}{m}$] trigger current using 2.5 MeV implantation energy and 1$\times$10$^{14}$ [cm$^{-2}$ ] dose at p-well

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.445-448
• /
• 1998

본 논문은 triple-well과 twin-well에서의 고에너지 이온주입 에너지와 도즈량 변화에 따른 래치업 특성을 비교하였다. 공정시뮬레이터인 ATHENA로 소자를 제작하고 도핑프로파일 형태와 구조를 조사한 후, 래치업 특성은 소자 시뮬레이터인 ATLAS를 이용하였다. triple-well 공정이 마스크 스텝수를 줄이고, 이온주입 후 열처리시간을 단축하며 별도의 열처리 공정없이 도핑르로파일을 넓은 형태로 분포시켜 래치업 면역특성이 매우 좋은 결과를 얻었다.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• The Mathematical Education
• /
• v.41 no.2
• /
• pp.227-231
• /
• 2002

The Pythagorean theorem and Pythagorean triple are well known. We know some Pythagorean triples, however we don't Cow well that every natural number can belong to some Pythagorean triple. In this paper, we show that every natural number, which is not less than 2, can be a length of a leg(a side opposite the acute angle in a right triangle) in some right triangle, and list some Pythagorean triples.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.130-130
• /
• 1999

• Journal of the Korean Mathematical Society
• /
• v.54 no.4
• /
• pp.1265-1279
• /
• 2017

In order to study the structure of arbitrary split Leibniz triple systems, we introduce the class of split Leibniz triple systems as the natural extension of the class of split Lie triple systems and split Leibniz algebras. By developing techniques of connections of roots for this kind of triple systems, we show that any of such Leibniz triple systems T with a symmetric root system is of the form $T=U+{\sum}_{[j]{\in}{\Lambda}^1/{\sim}}I_{[j]}$ with U a subspace of $T_0$ and any $I_{[j]}$ a well described ideal of T, satisfying $\{I_{[j]},T,I_{[k]}\}=\{I_{[j]},I_{[k]},T\}=\{T,I_{[j]},I_{[k]}\}=0 \text{ if }[j]{\neq}[k]$.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.29 no.3 s.234
• /
• pp.376-383
• /
• 2005

In the paper we investigate characteristics of a transitional behavior from a premixed flame to a triple flame in a lifted flame according to the change of equivalence ratio. In previous study, we showed that the stabilized laminar lifted flame regime is categorized by regimes of premixed flame, triple flame and critical flame. A gas-chromatograph is used to measure concentration field, a smoke-wire system is used to measure streak line, and a PIV system is used to measure velocity field in lifted flame. In the visualization experiment of smoke wire, the flow divergence and redirection reappeared in premixed flame as well as triple flame. Thus we cannot express the flame front of lifted flame has a behavior of triple flame with only flow divergence and redirection. In PIV measurement, flow velocity for those three flames has minimum value at the tip of flame front. To differentiate triple flame and premixed flame, $\Phi$ value of partially premixed fraction is employed. The partially premixed fraction $\Phi$ was constant in premixed flame. In critical flame small gradient appears over the whole regime. In triple flame, typical diffusion flame shape is obtained as parabolic distribution type due to diffusion flame trailing.

• Bulletin of the Korean Mathematical Society
• /
• v.53 no.1
• /
• pp.163-180
• /
• 2016

We study the structure of an arbitrary graded Lie triple system $\mathfrak{T}$ with restrictions neither on the dimension nor the base field. We show that $\mathfrak{T}$ is of the form $\mathfrak{T}=U+\sum_{j}I_j$ with U a linear subspace of the 1-homogeneous component $\mathfrak{T}_1$ and any $I_j$ a well described graded ideal of $\mathfrak{T}$, satisfying $[I_j,\mathfrak{T},I_k]=0$ if $j{\neq}k$. Under mild conditions, the simplicity of $\mathfrak{T}$ is characterized and it is shown that an arbitrary graded Lie triple system $\mathfrak{T}$ is the direct sum of the family of its minimal graded ideals, each one being a simple graded Lie triple system.

• Bulletin of the Korean Mathematical Society
• /
• v.54 no.1
• /
• pp.243-251
• /
• 2017

We get a $Schr{\ddot{o}}dinger$ uncertainty relation for the monotone triple skew information which was introduced by Yanagi and Kajihara. This information extends the monotone pair skew information as well as Wigner-Yanase-Dyson skew information.