• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.176-180
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• 2003

Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.180-182
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• 2009

Two different wet etching solutions, NaOH 40% and Acid, were used for etching in tri-crystalline Silicon(Tri-Si) solar cell fabrication. The wafers etched in NaOH40% solution showed higher reflectance compared to the wafers etched in Acid solution after $SiN_x$ deposition. In light current-voltage results, the cells etched in Acid solution exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% solution. We have obtained 16.70% conversion efficiency in large area($156cm^2$) Tri-Si solar cells etched in Acid solution.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.391-394
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• 2004

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• 한국세라믹학회지
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• 제41권5호
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• pp.349-352
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• 2004

Organic-inorganic hybrid sol based on ZrO$_2$-SiO$_2$ system was prepared by sol-gel process. Firstly, ZrO$_2$ non-aqueous precursor sol was synthesized and then organosilane compounds which include epoxy silane (GPTS; 3-g1ycidoxypropyl tri-methoxysilane) and acryl silane (ACS; (3-(tri-methoxysilyl)propylmethacrylate)) were added to ZrO$_2$precursor sol for hybridization. Finally, com-mercial silica sol was added to improve the mechanical properties. Synthesized organic-inorganic Zr-hybrid sol was coated on polycarbonate substrate for enhancing it’s mechanical properties, especially hardness. Vicker’s hardness of polycarbonate sub strate was increased from 13.6 to 17.8 MPa and its pencil hardness was increased from 2 to 7 H, respectively, after coating and drying at 10$0^{\circ}C$ for 30 min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.661-662
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• 2006

This paper introduces a CMOS clock driver that shows a high efficiency of electric power (lower power consumption) with the supply of lower voltage(VDD), by taking advantage of charge recycling technology. Comparing with the existing structure, this driver showed the improved maximum efficiency of electric power; 72% and 68%, with the supplied voltage of 1.8v and 1.2v, respectively. Since the output waveform shows the tri-state operating region, utilization is expected in the digital integrated circuits.

• 공업화학
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• 제10권7호
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• pp.1020-1027
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• 1999

헤테로폴리산(HPW)을 표면적이 서로 다른 담체인 $SiO_2$ MCM-41, MCM-48에 담지농도와 소성온도를 달리하며 담지시켰다. X-선 회절분석, 질소 흡착법, 적외선 흡수 스펙트럼, $^{31}P$ 고체 핵자기 공명을 통해서 이 담지촉매의 특성을 조사하였다. IR과 NMR의 결과로부터 HPW가 담체안에서 케긴 구조를 유지하면서 존재함을 확인할 수 있었다. MCM-41의 경우에는 35 wt %, MCM-48의 경우에는 65 wt %로 담지시킨 경우에도 X-선 회절패턴에서 HPW 고유의 피크가 나타나지 않았으며, 이와 같은 특성을 통해서 HPW가 고분산 되어 있음을 알 수 있었다. Di, bis, tri-pentaerythritol의 가수분해 반응에서 이들 담지 촉매는 높은 촉매 활성을 보였으며 HPW, $HPW/SiO_2$보다 HPW/MCM-41, 48의 촉매 활성이 더 우수하였다.

• 한국음향학회지
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• 제22권3호
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• pp.175-181
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• 2003

한국어 숫자음은 단음절이며 연결된 숫자음 사이에 연음현상의 영향 때문에 한국어 연결 숫자음의 인식방법으로 반음절에 기반한 모델들이 제시되어 왔다. 기존에 제안된 반음절이나 반음절＋반음절의 인식모델을 이용한 방법에서는 아직까지 우수한 인식성능을 보이지 못하고 있다. 본 논문에서는 확장된 문맥종속 반음절 모델을 이용한 한국어 4 연숫자음 인식방법을 제안한다. 실험에서 연결숫자음은 SiTEC의 4 연숫자음 데이터 베이스를 사용하였으며 학습과 인식방법으로는 HTK 3.0의 C-HMM을 이용하였다. 기존의 방법들과 인식율을 비교해 본 결과, 92%의 비교적 우수한 인식성능을 보였다.