• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.176-180
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• 2003

Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.180-182
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• 2009

Two different wet etching solutions, NaOH 40% and Acid, were used for etching in tri-crystalline Silicon(Tri-Si) solar cell fabrication. The wafers etched in NaOH40% solution showed higher reflectance compared to the wafers etched in Acid solution after $SiN_x$ deposition. In light current-voltage results, the cells etched in Acid solution exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% solution. We have obtained 16.70% conversion efficiency in large area($156cm^2$) Tri-Si solar cells etched in Acid solution.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.391-394
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• 2004

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.349-352
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• 2004

Organic-inorganic hybrid sol based on ZrO$_2$-SiO$_2$ system was prepared by sol-gel process. Firstly, ZrO$_2$ non-aqueous precursor sol was synthesized and then organosilane compounds which include epoxy silane (GPTS; 3-g1ycidoxypropyl tri-methoxysilane) and acryl silane (ACS; (3-(tri-methoxysilyl)propylmethacrylate)) were added to ZrO$_2$precursor sol for hybridization. Finally, com-mercial silica sol was added to improve the mechanical properties. Synthesized organic-inorganic Zr-hybrid sol was coated on polycarbonate substrate for enhancing it’s mechanical properties, especially hardness. Vicker’s hardness of polycarbonate sub strate was increased from 13.6 to 17.8 MPa and its pencil hardness was increased from 2 to 7 H, respectively, after coating and drying at 10$0^{\circ}C$ for 30 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.318-321
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• 2002

This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.661-662
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• 2006

This paper introduces a CMOS clock driver that shows a high efficiency of electric power (lower power consumption) with the supply of lower voltage(VDD), by taking advantage of charge recycling technology. Comparing with the existing structure, this driver showed the improved maximum efficiency of electric power; 72% and 68%, with the supplied voltage of 1.8v and 1.2v, respectively. Since the output waveform shows the tri-state operating region, utilization is expected in the digital integrated circuits.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.1020-1027
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• 1999

Heteropoly acid(HPW) catalysts supported on three different carriers, an amorphous silica, MCM-41 and MCM-48, with different loadings and calcination temperatures have been prepared and characterized by X-ray diffraction, nitrogen physorption, infrared spectroscopy, and $^{31}P$ magic angle spinning NMR. From the result of IR and NMR, it was shown that HPW retains the Keggin structure on the supported catalysts. No HPW crystal phase was developed even at HPW loadings as high as 35 wt % on the MCM-41 and 65 wt % MCM-48. Thus, HPW appeared to form finely dispersed species. In the hydrolysis reaction of di, bis, tri-pentaerythritol, HPW/MCM-41, 48 exhibited higher catalytic activity than $HPW/SiO_2$ or HPW.

• The Journal of the Acoustical Society of Korea
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• v.22 no.3
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• pp.175-181
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• 2003

Because a word of Korean digits is a syllable and deeply coarticulatied in connected digits, some recognition models based on demisyllables have been proposed by researchers. However, they could not show an excellent recognition results yet. This paper proposes a recognition model based on extended and context-dependent demisyllables, such as a tri-demisyllable like a tri-phone, for the Korean 4-connected digits recognition. For experiments, we use a toolkit of HTK 3.0 for building this model of continuous HMMs using training Korean connected digits from SiTEC database and for recognizing unknown ones. The results show that the recognition rate is 92% and this model has an ability to improve the recognition performance of Korean connected digits.