• 제목/요약/키워드: Treatment barrier

검색결과 660건 처리시간 0.033초

난백(Egg White)에서 추출한 리소좀 추출물(LOE)의 미백 효능 및 피부장벽에 관한 연구 (Study on the Whitening Efficacy and Skin Barrier by Lysosome-related Organelle Extract (LOE) from Egg White)

  • 최다희;전경찬;윤지희;민지호;박시준;김정수;황이택;황형서
    • 대한화장품학회지
    • /
    • 제45권4호
    • /
    • pp.389-397
    • /
    • 2019
  • 리소좀(lysosome)은 진핵세포에서 에너지 대사 및 세포 내 소화 작용에 관여하는 세포 소기관으로 protease, nuclease, glycosidase, lipase, phosphatase 들이 다수 존재한다. 우리는 선행 연구결과들을 통해 난백 리소좀의 멜라닌 색소 탈색능을 보고하였다[8]. 그러나 B16F10 melanocyte 세포주에서 난백 리소좀에 의한 멜라닌 함량 변화 및 피부장벽 조절 연구는 거의 보고되지 않았다. 따라서 우리는 계란 난백(egg white)으로부터 추출한 lysosome-related organelle extract (LOE)에 의한 세포 내 멜라닌 함량 변화 및 피부장벽 강화 효과를 규명하고자 하였다. 먼저 LOE의 미백 효능을 확인하기 위해 B16F10 세포주를 이용하여 세포독성 평가를 진행하였다. B16F10 세포주에서 LOE에 의한 세포독성은 0에서 20 mg/mL 농도에서 관찰되지 않았으나, 40 mg/mL 부터 세포독성이 관찰되어 이후 모든 실험에서 최대 농도값을 20 mg/mL로 설정하였다. 먼저 LOE를 이용한 melanin contents assay 결과, 음성 대조군인 α-MSH 처리군 대비 LOE 처리군 5, 10, 20 mg/mL 농도에서 61.5 ± 4.0%, 61.4 ± 7.3%, 58.3 ± 8.3%로 세포 내 멜라닌 함량이 감소되는 것을 확인하였고, 20 mg/mL 농도 조건에서 MITF 발현 억제도 관찰하였다. LOE의 피부 장벽에 미치는 영향을 관찰하기 위해 각질형성세포주(HaCaT)를 이용하여 TEER (trans-epithelial electrical resistance) assay를 수행한 결과, LOE에 의해 농도 의존적으로 TEER 저항값이 증가하여 LOE가 피부장벽 강화에도 효과가 있음을 알 수 있었다. 또한 피부 염증 유발을 위한 TNF-α 처리조건에서도 LOE는 TEER 저항값을 증가시켜 염증 유발 조건에서도 LOE에 의해 피부장벽이 정상적으로 회복되었음을 알 수 있었다. 마지막으로 cell migration assay를 통해 LOE에 의한 세포이동 촉진 효과를 관찰한 결과, LOE는 세포분열 및 세포이동을 촉진시켰다. 위 결과들을 통해 LOE는 미백 기능 뿐 아니라 피부재생 및 피부장벽 강화에도 효과를 나타내는 소재이며, 효소안정화 및 제형화 기술이 접목된다면 향후 새로운 미백 기능성 화장품 소재로도 개발될 수 있을 것이다.

멀티 플라즈마 공정을 이용한 하수 미생물의 불활성화 (Inactivation of Sewage Microorganisms using Multi-Plasma Process)

  • 김동석;박영식
    • 한국환경과학회지
    • /
    • 제23권5호
    • /
    • pp.985-993
    • /
    • 2014
  • For the field application of dielectric barrier discharge plasma reactor, a multi-plasma reactor was investigated for the inactivation of microorganisms in sewage. We also considered the possibility of degradation of non-biodegradable matter ($UV_{254}$) and total organic carbon (TOC) in sewage. The multi-plasma reactor in this study was divided into high voltage neon transformers, gas supply unit and three plasma modules (consist of discharge, ground electrode and quartz dielectric tube). The experimental results showed that the inactivation of microorganisms with treated water type ranked in the following order: distilled water > synthetic sewage effluent >> real sewage effluent. The dissolved various components in the real sewage effluent highly influenced the performance of the inactivation of microorganisms. After continuous plasma treatment for 10 min at 180 V, residual microorganisms appeared below 2 log and $UV_{254}$ absorbance (showing a non-biodegradable substance in water) and TOC removal rate were 27.5% and 8.5%, respectively. Therefore, when the sewage effluent is treated with plasma, it can be expected the inactivation of microorganisms and additional improvement of water quality. It was observed that the $NH_4{^+}$-N and $PO{_4}^{3-}$-P concentrations of sewage was kept at the constant plasma discharging for 30 min. On the other hand, $NO_3{^-}$-N concentration was increased with proceeding of the plasma discharge.

표면 습식 식각 및 열처리에 따른 GaN 단일 나노로드 소자의 전기적 특성변화 (The Electrical Properties of GaN Individual Nanorod Devices by Wet-etching of the Nanorod Surface and Annealing Treatment)

  • 지현진;최재완;김규태
    • 한국전기전자재료학회논문지
    • /
    • 제24권2호
    • /
    • pp.152-155
    • /
    • 2011
  • Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

불소계열 플라즈마 처리를 통한 수직형 UV LED용 ITO/Al 기반 반사전극의 전기적/광학적 특성 최적화 (Optimization of Electrical/Optical Properties of ITO/Al Based Reflector for Vertical-type UV LEDs via SF6 Plasma Treatments)

  • 신기섭;김동윤;김태근
    • 한국전기전자재료학회논문지
    • /
    • 제24권11호
    • /
    • pp.911-914
    • /
    • 2011
  • We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

The Inhibitory Effect of Rivastigmine and Galantamine on Choline Transport in Brain Capillary Endothelial Cells

  • Lee, Na-Young;Kang, Young-Sook
    • Biomolecules & Therapeutics
    • /
    • 제18권1호
    • /
    • pp.65-70
    • /
    • 2010
  • The blood-brain barrier (BBB) transport of acetylcholinesterase (AChE) inhibitors, donepezil and tacrine suggested to be mediated by choline transport system in our previous study. Therefore, in the present study, we investigated the interaction of other AChE inhibitors, rivastigmine and galantamine with choline transporter at the BBB. The effects of rivastigmine and galantamine on the transport of choline by conditionally immortalized rat brain capillary endothelial cell lines (TR-BBB cells) were characterized by cellular uptake study using radiolabeled choline. The uptake of [$^3H$]choline was inhibited by rivastigmine and galantamine, with $IC_{50}$ values (i.e. concentration necessary for 50% inhibition) for 1.13 and 1.15 mM, respectively. Rivastigmine inhibited the uptake of [$^3H$]choline competitively with $K_i$ of 1.01 mM, but galantamine inhibited noncompetitively. In addition, the efflux of [$^3H$]choline was significantly inhibited by rivastigmine and galantamine. Our results indicated that the BBB choline transporter may be involved in a part of the influx and efflux transport of rivastigmine across the BBB. These findings should be therapeutically relevant to the treatment of Alzheimer's disease (AD) with AChE inhibitors, and, more generally, to the BBB transport of CNS-acting cationic drugs via choline transporter.

Poly-crystalline Silicon Thin Film Transistor: a Two-dimensional Threshold Voltage Analysis using Green's Function Approach

  • Sehgal, Amit;Mangla, Tina;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제7권4호
    • /
    • pp.287-298
    • /
    • 2007
  • A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.

Altering Conidial Dispersal of Alternaria solani by Modifying Microclimate in Tomato Crop Canopy

  • Jambhulkar, Prashant Prakash;Jambhulkar, Nitiprasad;Meghwal, Madanlal;Ameta, Gauri Shankar
    • The Plant Pathology Journal
    • /
    • 제32권6호
    • /
    • pp.508-518
    • /
    • 2016
  • Early blight of tomato caused by Alternaria solani, is responsible for severe yield losses in tomato. The conidia survive on soil surface and old dry lower leaves of the plant and spread when suitable climatic conditions are available. Macroclimatic study reveals that highest inoculum concentration of Alternaria spores appeared in May 2012 to 2013 and lowest concentration during January 2012 to 2013. High night temperature positively correlated and significantly (P < 0.01) involved in conidial spore dispersal and low relative humidity (RH) displayed significant (P < 0.05) but negative correlation with conidial dispersal. The objective of the study was to modify microclimatic conditions of tomato crop canopy which may hamper conidial dispersal and reduce disease severity. We evaluated effect of marigold intercropping and plastic mulching singly and in consortia on A. solani conidial density, tomato leaf damage and microclimatic parameters as compar to tomato alone (T). Tomato-marigold intercropping-plastic mulching treatment (T + M + P) showed 35-39% reduction in disease intensity as compared to tomato alone. When intercropped with tomato, marigold served as barrier to conidial movement and plastic mulching prevented evapotranspiration and reduced the canopy RH that resulted in less germination of A. solani spores. Marigold intercropping and plastic mulching served successfully as physical barrier against conidial dissemination to diminish significantly the tomato foliar damage produced by A. solani.

이중 베리어 방전 반응기를 사용한 $NO_x$ 제거에 관한 연구 (A Study on the Double Dielectric Barrier Discharge for $NO_x$ reduction)

  • 김동욱;김응복;정영식
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1999년도 하계학술대회 논문집 E
    • /
    • pp.2182-2185
    • /
    • 1999
  • In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

  • PDF

표면 코팅된 분말을 이용하여 제조된 반도성 $SrTiO_3$ 소결체의 입계화학과 전기적 특성 (Grain Boundary Chemistry and Electrical Characteristics of Semiconducting $SrTiO_3$ Ceramics Synthesized from Surface-Coated Powders)

  • 박명범;김정돈;허현;조남희
    • 한국세라믹학회지
    • /
    • 제36권11호
    • /
    • pp.1252-1260
    • /
    • 1999
  • The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .

  • PDF

Cu/Capping Layer/NiSi 접촉의 상호확산 (Interdiffusion in Cu/Capping Layer/NiSi Contacts)

  • 유정주;배규식
    • 한국재료학회지
    • /
    • 제17권9호
    • /
    • pp.463-468
    • /
    • 2007
  • The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.