• Journal of Korean Tunnelling and Underground Space Association
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• v.4 no.1
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• pp.71-78
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• 2002

In this study, the influence of the presence of discontinuity planes on the load transfer mechanism and the pattern of loosening zone was studied based on the laboratory test. The trap-door and the reaction plates are installed as the bottom plane of the model box. The vertical discontinuity plane is installed in the dry sand. Various overburden heights and locations of discontinuity planes are applied as major factors in this study. The results show that at higher overburden heights over about 1.5 times the excavation width, the ratio of the transferred stress to the insitu stress converges to a certain value even if the overburden height increases further. The results also show that the discontinuity plane gives relatively larger influence on the load transfer mechanism, that produces the unsymmetrical load concentration, when the discontinuity plane locates within the tunnel width. When the discontinuity plane locates outside the tunnel width, the unsymmetrical load concentration is reduced considerably.

• Analytical Science and Technology
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• v.8 no.4
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• pp.739-744
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• 1995

The two main methods to prepare water samples for analyzing volatile organic compounds(VOC's) were investigated. One is the purge and trap(PT) method and another is the head space(HS) sampling method. Both methods were effective to transfer the low boiling point components from the water sample onto the capillary column. The cryo-focusing at the top of the main capillary column was an effective way to obtain the sharpness of the chromatographic peaks but could be avoided when a semi-wide bore column was used. The recovery from the same amount of the sample was better in PT than in HS but a larger sample volume in HS method could compensate the lower efficiency. Therefore PT is suitable to the analysis of drinking water where the very low concentration must be determined. HS is suitable to waste water analysis because of the easiness of the operation. The repeatability was good and similar in both methods. For the contamination of the former sample, both methods were tough and could be used without any problems. The matrix effect which could change the equilibrium parameters in HS method was find negligible in many components. The actual samples such as tap water and river water were analyzed with both methods concerning 16 components regulated in Korea.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.1
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• pp.61-68
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• 2000

Gas-phase hydrogen peroxide(H2O2) concentrations were measured to investigate it's distribution in the ambient air in downtown Seoul(Kwanghwamum and Mullae-dong). These measurements were made during four season, from April 30, 1998 to January 29, 1999, using Cold Trap and HPLC. Measurements were also made of other photochemical oxidants and trace gases(O3, NO2, CO and SO2) and meteorological parameters(relative humidity, temperature, solar radiation and wind speed). The mean of all observations was 0.10 ppbv and the range measured was below the level of detection(>0.01 ppbv) to 0.47ppbv. The higher seasonal mean concentrations showed during the summer(0.21 ppbv) and concentrations of H2O2 showed a diurnal variation with maximum concentrations in the afternoon(12:30∼14:00). The results from the corrrelation analysis showed that the concentration of gaseous H2O2 is strongly dependent on the other air pollutants(NO2, CO and O3) and meteorological parameters(relative humidity, temperature and solar radiation.)

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Analytical Science and Technology
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• v.11 no.3
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• pp.194-201
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• 1998

The formaldehyde vapor produced from wood and steel furniture was absorbed in distilled water and derivatized with acetylacetone and determined by UV-visible spectrophotometry. Variation in HCHO emission with time was monitored at room temperature. The emission of volatile compounds from wood, wood-based and steel-based materials was investigated in a 50 mL glass vial. The concentration of the gases emitted in a glass vial was determined by ion-trap GC-MS.

• Natural Product Sciences
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• v.21 no.1
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• pp.6-13
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• 2015

Phytochemical investigation of the aerial components of Ducrosia ismaelis Asch. led to the isolation of six known compounds, psoralen (1), isopsoralen (2), cnidioside A (3), (-)-syringaresinol-O-${\beta}$-D-glucopyranoside (4), (E)-plicatin B (5), trilinolein (6). The chemical structures of these compounds were elucidated from spectroscopic data and by comparison of these data with previously published results. The antioxidant, anti-osteoporotic and cardiovascular related activities of the isolated compounds were assessed using oxygen radical absorbance capacity (ORAC), reducing capacity, tartrate-resistant acid phosphatase (TRAP), and soluble epoxide hydrolase (sEH) inhibitory activity assays. Compounds (3-5) showed potent peroxyl radical-scavenging capacities with ORAC values of $11.06{\pm}0.39$, $7.98{\pm}0.10$, and $13.99{\pm}0.06$ Trolox equivalent (TE) at concentrations of $10{\mu}M$, respectively. Only compounds 4 and 5 was able to significantly reduce $Cu^{2+}$ ions, with a reduction value of $9.06{\pm}0.32$ and $4.61{\pm}0.00{\mu}M$ Trolox Equivalent (TE) at a concentration of $10{\mu}M$. Compound 5 at $10{\mu}M$ exhibited a potent inhibitory effect on osteoclastic TRAP activity with a TRAP value of $86.05{\pm}6.55%$ of the control. Compounds 1, 3 and 5 potently inhibited sEH activity with $IC_{50}$ values of 41.6 4.9, 16.0 1.1, and 49.0 $5.7{\mu}M$, respectively.