• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.6 no.6
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• pp.23-31
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• 1992

Charged particle in the polymers is supposed to affect the electrical conduction and to lead them th dielectrical breakdown finally. So we measured the space charge distribution made by application of high electric field and evaluated the polarity of the charged particle affected on electrical conduction and space charge formed in the insulating materials by using temperature gradient thermally stimulated current measurement method(TG-TSC measurement). As a result, in the cross-linked polyethylene, A-peak was caused from dipole polarization, C-peak was caused from ionic space charge polarization and D-peak was injected trap hole. Also we found it crossible the evaluated the polarity of injected trap carrier and electron(or hole) of carrier trap in the cross-lined polyethylene. We found that ${\gamma}$-ray irradiated low density polyethylene had a relation to the electronic trap and we also could get the value of electric field distribution in the samples of which evaluation was available.

• The Korean Journal of Pesticide Science
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• v.17 no.4
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• pp.440-447
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• 2013

F. occidentalis (WFT, western flower thrips) is a major pest in artificial chrysanthemum houses. Nnumber of WFT attracted to yellow sticky trap was highest at trap plant and lowest at 15 and 20m places away from trap plant. Number of WFT attracted to yellow stick trap when trap plant was placed in chrysanthemum house 30 days after planting (resident WFT) was 4.4~7.7 times more than at 5 and 10 m places away from trap plant and when trap plant was placed in chrysanthemum house immediately after planting (resident WFT) was 5.7~9.4 times more at 5 and 10 m places away from trap plant. Number of WFT between the place trap plant located and unlocated was undifferent when cultured chrysanthemum formed flower. In case of the plot that trap plant and natural enemy was used simultaneously, number of WFT was highter then chemicals plot. In case of the plot that trap plant and chamicals (chemicals was sprayed on trap plant only) WFT was controlled in trap plant place only but density of WFT on 5m and 10m places away from trap plant was increased. Therefore, WFT could be controlled effectively by use of trap plant (flowering yellow chrysanthemum) and natural enemy simultaneously.

• Journal of Forest and Environmental Science
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• v.33 no.3
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• pp.239-242
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• 2017

Although camera traps have been widely used to understand the abundance of wildlife in recent decades, the effort has been restricted to small sub-set of wildlife which can mark-and-recapture. The Random Encounter Model shows an alternative approach to estimate the absolute abundance from camera trap detection rate for any animals without the need for individual recognition. Our study aims to examine the feasibility and validity of the Random Encounter Model for the density estimation of endangered leopard cats (Prionailurus bengalensis) in Maekdo riparian park, Busan, South Korea. According to the model, the estimated leopard cat density was $1.76km^{-2}$ (CI 95%, 0.74-3.49), which indicated 2.46 leopard cats in $1.4km^2$ of our study area. This estimate was not statistically different from the previous leopard cat population count ($2.33{\pm}0.58$) in the same area. As follows, our research demonstrated the application and usefulness of the Random Encounter Model in density estimation of unmarked wildlife which helps to manage and protect the target species with a better understanding of their status.

• Korean journal of applied entomology
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• v.55 no.2
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• pp.109-117
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• 2016

We investigated the control of Bemisia tabaci adults in tomato greenhouses using the eggplant as a trap plant with 4 systemic chemicals. The control effect of dinotefuran SG 50% on tobacco whitefly adults was 80% mortality, the highest than that cyantraniliprole, pyridaben and clothianidin, 51.0%, 12.4% and 11.0% respectively when all chemicals with recommended doses were used. Dinotefuran was applied at various doses and was observed to be most effective above 200ppm (88.4%)t. The control effect of dinotefuran lasted for appromimately nine 9 days and the density of tobacco whitefly adults increased there after. In field tests, the densities of tobacco whitefly adults on tomato shoots were highest at points 0, 15 and 20 m from the eggplant traps and lowest at 5 and 10 m. When the density of tobacco whitefly was low and the eggplants with dinotefuran SG 50% were placed in the tomato greenhouse at 10 m intervals, the overall density of tobacco whitefly adults was lower. In addition, densities were higher at the side of the greenhouse than in the interior and further away from the eggplant. When the density of tobacco whitefly was high and the eggplants with dinotefuran were placed at 5 m intervals, the density of tobacco whitefly at each 5 m point decreased. Theses results confirm that the eggplant is an effective trap plant for attracting tobacco whitefly audlts and combined with dinotefuran SG 50% decreases the density of tobacco whitefly in tomato greenhouses.

• The Korean Journal of Pesticide Science
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• v.20 no.4
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• pp.281-285
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• 2016

This study was conducted to investigate the characteristics of oviposition and the effect of density suppression by yellow-colored sticky trap on Ricania shantungensis in blueberry. The occurrence of an egg mass of R. shantungensis in the upper, middle and lower region were 56.6~60.2%, 23.8~28.1% and 11.7~19.7%, respectively. The number of egg masses in the branch was investigated. Percentage of the branch with one egg mass was greatest (50.9%) than with two (20.5%), three (14.6%) and over four (14.0%). The effect of yellow-colored sticky trap to reduce the number of R. shantungensis egg masses in blueberry was also investigated. In a month after yellow sticky trap installation, 17.1 adults of R. shantungensis were attracted per trap. Moreover, the number of egg masses on a tree in yellow-colored sticky trap plot was much lower (0.4) than control (1.3). Consequently, this result shows that use of yellow-colored sticky trap may contribute to decrease ovipisotion rate of R. shantungensis in blueberry.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Journal of the Korea Organic Resources Recycling Association
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• v.13 no.2
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• pp.98-106
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• 2005

Population dynamics in the vermicomposting bed was investigated. And harvesting efficiencies of earthworm attracting traps with different attractants, mesh sizes of net and covering materials was evaluated. Peak density of earthworm population was $5kg/m^2$ and therafter its desity kept $4.4{\sim}5.0kg/m^2$. It was evaluated that suitable mesh size of the net was 7mm and proper covering materials of the earthworm attracting trap was cotton quilt. The earthworm harvesting efficiency of trap with attractant was much higher than that of trap without attractant. With more amount of attractant in the trap and with longer setting period of trap onto the vermicomposting bed, the earthworm attracting trap harvested more earthworms. Crushed pear-peel attracted much more earthworms than paper mill sludge, but it was difficult to supply enough amount of crushed pear-peel for practical need. Sugar solution(10%) with tab water was proven to be an alternative to crushed pear-peel because its attracting effect on earthworm was as high as crushed pear-peel and it was easy to prepare and supply in large quantity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.77.1-77.1
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• 2012

Zn 기반 산화물 반도체는 기존의 비정질 Si에 비해 저온공정에도 불구하고 높은 이동도, 투명하다는 장점으로 인해 차세대 디스플레이용 백플레인 소자로 주목받고 있다. 산화물 트랜지스터는 우수한 소자특성을 보여주고 있지만, 온도, 빛, 그리고 게이트 바이어스 스트레스에 의한 문턱전압의 불안정성이 문제의 문제를 해결해야한다. 산화물 반도체의 문턱전압의 불안정성은 유전체와 채널층의 계면 혹은 채널에서의 charge trap, photo-generated carrier, ads-/desorption of molecular 등의 원인으로 보고되고 있어, 고신뢰성의 산화물 채널층을 성장하기 위한 노력이 이루어지고 있다. 최근, 산화물 트랜지스터의 다양한 조건에서의 문턱전압의 불안정성을 해결하기 위해 산화물의 주된 결함으로 일컬어지고 있는 산소결핍을 억제하기 위해 성장공정의 제어 그리고, 산소와의 높은 binding energy를 같은 Al, Hf, Si 등과 같은 원소를 첨가하여 향상된 소자의 특성이 보고되고 있지만, 줄어든 산소공공으로 인해 이동도가 저하되는 문제점이 야기되고 있다. 이러한 문제점을 해결하기 위해, 최근에는 Buried layer의 삽입 혹은 bi-channel 등과 같은 방안들이 제안되고 있다. 본 연구는 atomic layer deposition을 이용하여 AZO bureid layer가 적용된 ZnO 트랜지스터의 특성과 안정성에 대한 연구를 하였다. 다결정 ZnO 채널은 유전체와의 계면에 많은 interface trap density로 인해 positive gate bias stress에 의한 문턱전압의 불안정성을 보였지만, AZO층이 적용된 ZnO 트랜지스터는 줄어든 interface trap density로 인해 향산된 stability를 보였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.