• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.2
• /
• pp.120-124
• /
• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.120.5-120
• /
• 2001

This paper introduces an Adapative Goal Pertubation Method(AGPM) for mobile robots which can move safely without being locked in a trap situation. AGPM is a modified method of VFH(Vector Field Histrogram) that Borenstein has proposed. AGPM consists of Avoid-Trap-Mode, Escape-Trap-Mode and Check-Trap-Mode. Some results of the mobile robot that have 8 ultrasonic sensors are shown through simulations.

• Journal of the Korean Chemical Society
• /
• v.62 no.6
• /
• pp.453-457
• /
• 2018

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.8 no.2
• /
• pp.50-55
• /
• 1999

The exhaust emissions from diesel vehicle are known to be harmful to human health and environment. Recently, one of the most environment problems is particulate matter. In this study, through the actual exper iment and heat transfer of exhaust pipe in light duty diesel engine equipped with the ceramic filter trap of throttling type, following results are obtained. 1. In case of light duty diesel engine equipped with ceramic filter trap of throttling type, Power and torque of engine were decreased about 5%, compared with the case without trap system. It means that was not so much effect on base engine performance.2. If the length of exhaust pipe when equipping with ceramic filter trap is suitably controlled, the range of regeneration will be expand much more.3. Particulate matter reduction efficiency of ceramic filter trap system was about 70%-80%, so it was proved a good system to reduce particulate matter.In experiment, test was conducted to estimate engine emission in 2,476cc light duty diesel engine which was equipped with ceramic filter trap.

• Journal of Nutrition and Health
• /
• v.35 no.1
• /
• pp.30-36
• /
• 2002

This study was conducted to evaluate the effect of regular exercise and other relating factors on the activities of erythrocyte antioxidant enzymes and plasma total radical-trapping antioxidant potential (TRAP) in 61 healthy male college students. The study population were divided in two groups ; small amount of exerciser (exorcise time less than 30min/d) and moderate amount of exerciser (exorcise time more than 30min/d) according to their physical exercise habits measured by a questionnaire. Dietary intake of vitamin C and vitamin E, Plasma lipid Profiles, erythrocyte superoxide dismutase(SOD), glutathione peroxidase(GSH-Px) and catalase activities, as well as plasma TRAP levels were determined. Plasma TRAP level was significantly higher in moderate amount of exercisers than that in small amount of exercisers. No significant differences were observed in erythrocryte SOD, catalase and GSH-Px between the two groups. Mean exercise time was positively correlated with the plasma level of TRAP significantly, and amount of alcohol consumption was negatively correlated with the erythrocyte SOD activity, Dietary vitamin C and I intakes did not correlated with either erythrocyte enzyme activities or plasma TRAP levels. There were positive correlations between plasma HDL-cholesterol, and erythrocyte GSH-Px or plasma TRAP levels. Plasma vitamin C concentrations was negatively correlated with plasma TRAP levels and erythrocyte SOD activity, however plasma vitamin C concentration was positively correlated with erythrocyte GSH-Px activity, The results would suggest that regular moderate exercise, nonsmoking, high HDL-cholesterol and high plasma vitamin E concentration enhance antioxidant defences against reactive oxygen species and may increase the likelihood of a healthier life span.

• Journal of Plant Biotechnology
• /
• v.30 no.4
• /
• pp.307-313
• /
• 2003

Fluorescent differential display (FDD) is a method for identifying differentially expressed genes in eukaryotic cells. The mRNA FDD technology works by systematic amplification of the 3' terminal regions of mRNAs. This method involve the reverse transcription using anchored primers designed to bind 5'boundary of the poly A tails, followed by polymerase chain reaction (PCR) amplification with additional upstream primers of arbitrary sequences. The amplified cDNA subpopulations are separated by denaturing polyacrylamide electrophoresis. To identify the genes involved in the development of first trap leaf, we applied a FDD method using mRNAs from leaf base, first trap leaf and flower tissue, respectively. We screened several genes that expressed specifically in first trap leaf. Nucleotide sequence analysis of these genes revealed that these were protease inhibitor (PI), myo-inositol-1-phosphate synthase and lipocalin-type prostaglandin D synthase. Northern blot analysis showed that these genes were expressed specifically in first trap leaf (in vivo and in vitro). FDD could prove to be useful for simultaneous scanning of transcripts from multiple cDNA samples and faster selection of differentially expressed transcripts of interest.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.124-125
• /
• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.5
• /
• pp.530-537
• /
• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.3
• /
• pp.447-450
• /
• 2007

Trap effects on the formation of space-charge field (SCF) associated with the photorefractivity of nonlinear optical polymers were studied by the Monte Carlo simulation using modified Gaussian disorder model. The charge transport dynamics influenced by the presence of trap molecules controls the formation of SCF via the charge distribution. Temporal behavior of SCF formation and SCF dependence on the trap depth are discussed in terms of the concentration and distribution of charges (holes and ionized acceptors) developed following illumination of light. The correlation of the trap depth and the energetic disorder is presented for an optimal efficiency for the SCF formation.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.2
• /
• pp.17-24
• /
• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.