Journal of the Institute of Electronics Engineers of Korea TE (대한전자공학회논문지TE)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Stress Dependence of Trap Density in Silicon Oxide

  • Kang, C. S. (Yuhan College, Dept. of Electronic Engineering)
  • Published : 2000.06.01
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Abstract

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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References

  1. Journal of Elect. Society v.145 no.4 The search for cathode and anode traps in high voltage stressed silicon oxides C. S. Kang;D. J. Dumin
  2. IEEE Trans. on Elec. v.46 no.7 Dependence of Fermi level positions on the reliability of ultrathin MOS gate oxides Tien Chun Yang;K. C. Saraswat
  3. Microelectronics Reliability v.39 Measurement and modeling of the annealing kinetics of stress induced leakage current in ultrathin oxides P. Riess;J. Brini
  4. Microelectronics Reliability v.39 Electric Breakdowns and breakdown mechanisms in ultrathin silicon oxides J. C. Jackson;D. J. Dumin
  5. Microelectronics Reliability v.39 Stress induced leakage current in very thin dielectric layers to reliability extrapolation modeling S. Bruyere;G. Ghibaudo
  6. Microelectronics Reliability v.39 Study of stress induced leakage current by using high resolution measurements B. De Salvo;G. Reimbold
  7. Applied Physics Letters v.75 no.24 Analysis of the stress-induced leakage current and related trap distribution P. Riess;G. Pananakakis