• Korean Journal of Materials Research
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• v.11 no.1
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• pp.15-19
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• 2001

Transparent and conducting tin oxide thin films were prepared on soda lime silicate glass by thermal chemical vapour deposition. Thin films were fabricated from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant. The properties of fabricated tin oxide films are highly changed with variations of substrate temperature. Optimized thin films could be prepared on TMT, which flow rate of 8 sccm, oxygen flow rate of 150 sccm and substrate temperature of 38$0^{\circ}C$. We reduced deposition temperature about$ 180^{\circ}C$ by using of oxygen containing ozone instead of pure oxygen and resistivity of thin films was decreased from ~ ${\times}10^{-2}{\Omega}cm$ to ~${\times}10^{-3}{\Omega}cm$.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.30-35
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• 2008

In this paper, CdS/Cd(Cu)S thin films and diodes were manufactured via a chemical bath deposition (CBD) process, and the effects of $NH_4Cl$ and TEA(triethylamine) on the properties of the films were examined. The addition of $NH_4Cl$ significantly increased the thickness of the CdS and Cd(Cu)S films, however, the addition of TEA decreased the thickness in both cases slightly. The addition of $NH_4Cl$ along with TEA increased the film thickness more effectively compared to the addition of only $NH_4Cl$. The thickness of the CdS film prepared from an aqueous solution of 0.007 M $CdSO_4$, 1.3 M $NH_4OH$, 0.03 M $SC(NH_2)_2$, 0.0001 M TEA and 0.03 M $NH_4Cl$ was 310 nm. Dark resistivity of the CdS film was $1.2{\times}10^3\;{\Omega}cm$ and the photo resistivity with $500\;W/cm^2$ irradiation of white light was $20{\Omega}cm$. The Cd(Cu)S/CdS thin film diodes prepared by CBD showed good rectifying characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.181-185
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• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.103-104
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• 2006

Transparent conductive oxide (TCO) are necessary as front electrode for increased efficiency of LED. In our paper, transparent conducting alminum-doped Zinc oxide films (AZO) were prepared by rf magnetron sputtering on glass (corning 1737) substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The smooth AZO films were etched in diluted HCL (0.5%) to examine the surface morphology properties as a variation of the time. The surface morphology of AZO films increased as a time. We observed texture structure of AZO thin film etched for 1min.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.117-121
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• 2010

The composite films were fabricated by air-spray method under the 2 kgf/$cm^2$ pressure using the multi-walled CNTs solution and the nitrocellulose on a 10 ${\mu}m$ polyimide film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion by varying the spray time from 20, 40 and 60sec. The electrical and the optical properties of the sandwiched-structure-composite thin films were investigated by an UV/VIS spectrometer and a Hall Effect equipment. As a result, the optical transmittance of all thin films in the visible range, as well as the electrical conductance shows an available value for the transparent electrode. The carrier concentration and the light transmittance rate for the fabricated sample are between $3.733{\times}10^{10}$ and $6.551{\times}10^{14}cm^{-3}$, around 35 to 95%, respectively.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.271-274
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• 2005

We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.491-495
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• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.