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http://dx.doi.org/10.4313/JKEM.2012.25.7.491

Structural, Optical, and Electrical Properties of In2O3 Thin Films Deposited on Various Buffer Layers  

Kim, Moon-Hwan (Department of Automotive and Mechanical Engineering, Silla University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.7, 2012 , pp. 491-495 More about this Journal
Abstract
The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.
Keywords
Buffer layer; $In_2O_3$ thin film; Magnetron sputtering;
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Times Cited By KSCI : 3  (Citation Analysis)
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