• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.353-354
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• 2008

in the environment with high temperature and humidity, surface temperature of the display window should be increased more than the temperature of water-vapor in order to get rid of fog. In this study, we manufacture anti-fog window device which has better transparence and gets high temperature by using ITO.

• Journal of Plant Biology
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• v.28 no.4
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• pp.329-332
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• 1985

A simple new device for obtaining very clear epidermal imprints for light microscopic studies is discussed. This new device is developed from“Britfix”(polystyrene cement) which is non-toxic to the plant organs. It involves direct application of the material on the desired surface of the plant organ to obtain thin, transparent replica. From the present investigation“Britfix”is found to be useful for the study of epidermal anatomy, morphology and physiology. Epidermal imprints can be mounted on the microscope slide without a mounting medium. Permanent slide of these imprints can be kept for any desired period without any deterioration of the replica.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.2285-2289
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• 2005

Robot is composed of various devices but, those are incompatible with each other and hardly developing reusable control software. This study suggests standard abstract interface for robot software component to make portable device and reusable control software of robot, based on familiar techniques to abstract device in operating systems. This assures uniform abstracted interface to the device driver software like sensor and actuator and, control program can be transparent operation over device. This study can separately and independently develop devices and control software with this idea. This makes it possible to replace existing devices with new devices which have an improved performance.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.8
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• pp.851-858
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• 2009

In this study, we propose a new input device using vision technology for positioning of multiple DOFs. The input device is composed of multiple Tags on a transparent table and a vision camera below the table. Vision camera detects LEDs at the bottom of each Tag to derive information of the ID, position and orientation. The information are used to determine position and orientation of remote target DOFs. Our developed approach is very reliable and effective, especially when the corresponding DOFs are from many independent individuals. We show an application example with a SCARA robot to prove the flexibility and extendability.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.325-328
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• 1991

In this study, $0.085Ba(La_{1/2}Nb_{1/2})O_3-0.915Pb(Zr_yTi_{1-y})O_3$(y=0.45, 0.50, 0.55, 0.60, 0.65[mol]) transparent electrooptic ceramics were fabricated by two-stage sintering method. Increasing the $PbZrO_3$ contents, dielectric constant was increased and Curie temperature was decreased. In the composition of 0.55[mol] $PbZrO_3$, electromechanical coupling factor was 0.43. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the compositions of 0.65, 0.60, 0.55[mol] $PbZrO_3$ was applicable to electroopticmemory device and the compositions of 0.50, 0.45[mol] $PbZrO_3$ was applicable to linear electrooptic device.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1564-1567
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• 2005

Zinc oxide thin films were grown at the t emperature of $100^{\circ}C$ and $150^{\circ}C$ by means of plasma enhanced atomic layer deposition (PEALD) and conventional atomic layer deposition for applying to the transparent thin film transistor (TTFT). The growth rate of $1.9{\AA}/cycle$ with oxygen plasma is similar to that of film grown with water. While the sheet resistivity of ZnO grown with water is 1233 ohm/sq, that of film grown with oxygen plasma was too high to measure with 4 point probe and hall measurement system. The resistivity of the films grown with oxygen plasma estimated to be $10^6$ times larger than that of the films grown with water. The difference of electrical property between two films was caused by the O/Zn atomic ratio. We fabricated ZnO-TFT by means of ALD for the first time and the ZnO channel fabricated with water showed saturation mobility of $0.398cm^2/V{\cdot}s$ with bottom gate configuration.