• 한국표면공학회지
• /
• 제43권3호
• /
• pp.148-153
• /
• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• 한국표면공학회지
• /
• 제50권6호
• /
• pp.486-491
• /
• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권1호
• /
• pp.26-29
• /
• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Transactions on Electrical and Electronic Materials
• /
• 제17권1호
• /
• pp.33-36
• /
• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.121.2-121.2
• /
• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국전기전자재료학회논문지
• /
• 제35권1호
• /
• pp.80-85
• /
• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.1101-1104
• /
• 2008

We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.826-828
• /
• 2003

With a new PDP transparent dielectric layer formation technique, we were able to make dielectric layer with high transmittance by using dry film type dielectric material. We optimized dielectric pastes for dry film and they showed good process properties in lamination , drying and firing.

• 한국표면공학회지
• /
• 제41권1호
• /
• pp.6-11
• /
• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1249-1252
• /
• 2007

We have fabricated 3.5” transparent AM-OLED panel driven by PEALD grown ZnO TFT. The performance of ZnO thin film transistor was improved by adapting top gate structure, protection layer for ZnO from photolithography process, optimizing temperature and plasma power of ZnO growth process. The ZnO-TFT has a mobility of $8.9cm^2/V.s$, a subthreshold swing of 0.95V, and an on/off ratio of $10^7$.