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Thin Film Transistor with Transparent ZnO as active channel layer  

Shin Paik-Kyun (인하대학교 전자전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.1, 2006 , pp. 26-29 More about this Journal
Abstract
Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.
Keywords
Transparent ZnO; TCO; Pulsed Laser Detposition; TFT;
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