• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.10-13
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• 2021

Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La_2-xSr_xCuO₄(LSCO) cuprate superconductor and SrRuO₃(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.105-109
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• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• 천문학회보
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• 제44권2호
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• pp.40.3-40.3
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• 2019

Our recent observations of the Sun through strong spectral lines have revealed several important properties of the three-minute umbral oscillations inside sunspots -- the oscillations of intensity and Doppler velocity with periods of 2 to 3 minutes. The oscillations usually occur in the form of a time series of oscillation packets each of which lasts 10 to 20 minutes, not as continuous trains. Each oscillation packet is characterized by a singly peaked power spectrum of velocity oscillation. The oscillations propagate in the vertical direction from the photosphere to the corona. In the upper chromosphere, they develop into shocks that eventually collide with the transition region. When shocks propagate along a highly inclined direction, the merging of two successive shocks can take place. Once they enter the corona, they change to linear compressional waves. In the image plane, the three-minute oscillations propagate with high speeds in the transverse direction as well, usually propagating radially outwards from a point, and sometimes accompanying spiraling patterns of Doppler velocity. These observational properties can be theoretically explained by postulating the spatio-temporally localized source of fast MHD waves at a depth of about 2000 km below the surface, the excitation of slow MHD waves via mode conversion near the photosphere, and the resonance of the slow waves in the photospheric layer below the temperature minimum, and the nonlinear development of slow waves in the chromosphere.

• 한국가시화정보학회지
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• 제21권2호
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• pp.24-33
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• 2023

This work is to observe the wake flow generated behind a ramp. We have conducted a large eddy simulation with two ramp models having different heights with two different inflow conditions. Reynolds number based on the height of the large ramp (LR) and small ramp (SR) are Re_h = 2.8×10⁴ and 1.4×10⁴ respectively. The wake flow visualization shows the formation of streamwise counter-rotating vortices pairs at the downstream of the obstacle. These primary vortices are stretched and lifted up when moving downstream. In order to observe the effect of the inflow condition on the wake transition, two different inlet flow conditions are given on the inlet section as an inlet boundary condition. Induced counter-rotating vortices pairs due to sharp-edged triangular ramp obstacles are developed and propagated downstream. In the result, the large ramp shows a more complicated wake structure of the boundary layer than the small ramp.

• Advances in aircraft and spacecraft science
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• 제10권3호
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• pp.203-222
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• 2023

The detonation combustion is a supersonic combustion process follows on shock wave oscillations in detonation tube. In this paper numerical studies are carried out combined effect of blockage ratio and spacing of obstacle on detonation wave propagation of hydrogen-air mixture in pulse detonation combustor. The deflagration to detonation transition of stoichiometric (ϕ=1)fuel-air mixture in channel has been analyzed for effect of blockage ratio (BR)=0.39, 0.51, 0.59, 0.71 with spacing of 2D and 3D. The reactive Navier-Stokes equation is used to solve the detonation wave propagation mechanism in Ansys Fluent platform. The result shows that fully developed detonation wave initiation regime is observed near smaller vortex generator ratio of BR=0.39 inside the combustor. The turbulent rate of reaction has also a great significance role for shock wave structure. However, vortices of rapid detonation wave are appears near thin boundary layer of each obstacle. Finally, detonation combustor demonstrates the superiority of pressure gain combustor with turbulent rate of reaction of 0.6 kg mol/m3 -s inside the detonation tube with obstacle spacing of 12 cm, this blockage enhanced the turbulence intensity and propulsive thrust. The successful detonation wave propagation speed is achieved in shortest possible time of 0.031s with a significance magnitude of 2349 m/s, which is higher than Chapman-Jouguet (C-J) velocity of 1848 m/s. Furthermore, stronger propulsive thrust force of 36.82 N is generated in pulse time of 0.031s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 광물과 암석
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• 제33권3호
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• pp.153-163
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• 2020

우리나라 제4기 고환경 변화 특성 규명을 위하여 수원시의 편마암 및 화강암 풍화대를 피복하는 적갈색 점토-실트 퇴적물 2개 단면(~3.5 m)에 대하여 광물 및 지화학 분석을 실시하였다. 퇴적층은 광물조성과 화학조성의 수직 변화를 기준으로 4개의 퇴적층(Unit 1-4)으로 구분되었다. 최하부 Unit 1은 K-장석 함량이 높은 사질 퇴적물로서 기반암 풍화물의 기여도가 높다. Unit 2는 전이층이며, Unit 3은 적갈색 점토-실트질 퇴적물로서 총점토 함량이 평균 58%이며, 주요 점토광물은 일라이트-스멕타이트 혼합층 광물과 수산기삽입질석/스멕타이트이다. Unit 3에는 사장석이 거의 함유되어 있지 않은 반면에, 그 풍화물인 고령토 광물의 함량이 다른 층들보다 높다. Unit 4는 전반적 광물조성과 화학적 특성이 Unit 3과 유사하나, 사장석과 녹니석의 함량이 더 높고 고령토 광물의 함량은 더 낮다. 단면내 화학성분 변화를 국내 타지역 적갈색 점토-실트층과 비교한 결과, Unit 3과 4는 풍성퇴적물의 범위에 포함되었다. 이 지역 퇴적 단면에서 고환경변화는 다음과 같이 해석된다. 기반암인 편마암과 화강암 풍화물이 침식되어 주변부에 사질 퇴적물로 퇴적되어 하부층(Unit 1, 2)을 이루고, 그 위에 빙하기의 점토-실트질 풍성퇴적물층(Unit 3)이 퇴적되었다. Unit 3은 간빙기의 풍화작용으로 풍화되어 전체적으로 적갈색 토양화되었다. 그 후 다시 빙하기로 접어들면서 최상부에 풍성퇴적물층(Unit 4)이 퇴적되었다.

• 한국진공학회지
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• 제18권4호
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• pp.245-253
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• 2009

InAs/GaSb (8/8-ML) 응력초격자 (SLS)의 성장 변수를 최적화하기 위하여, 다양한 조건 및 모드에서 SLS 구조를 제작하여 고분해능 X선회절 (XRD) 특성을 분석하였다. 본 연구에서는 성장온도, V/III 분자선 비율, 성장일시정지 (growth interruption, GI) 등의 변화를 통하여 SLS 계면층의 응력 변조를 유도하였고, XRD 0차 위성피크의 변위로서 응력의 변화를 고찰하였다. XRD 분석 결과로부터, SLS의 결정성과 응력의 변화를 유발하는 주요 변수는 각각 성장온도와 V/III(Sb/Ga) 비율임을 보여 주었다. 압축변형을 가지고 있는 본 연구에서 제작한 SLS 시료는 V/III(Sb/Ga) 비율의 감소에 따라 인장변형으로 전환됨을 보여 주었으며, GI 모드 및 시간에 따라 응력이 민감하게 변함을 관측할 수 있었다. 본 연구 결과로부터, [InAs/GaSb]-SLS ([8/8]-ML)의 최적 성장온도와 V/III(Sb/Ga) 비율는 각각 $350^{\circ}C$와 20이고, 결정성을 극대화하고 응력완화를 감소시키기 위해서는 InAs 성장 직전 약 3초 동안의 GI방법이 유효함을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.