• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.477-478
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• 2019

We have investigated the experiments in which fabrication and characterization of single-electron transistors were conducted due to easy fabrication and high functionality. In the Fe-MgF2 granular film, in which Fe grains are distributed between insulators instead of the conventional quantum dots, it can be easily fabricated by EB deposition alone, and various output values can be expected by applying two or more gate voltages. The tunneling thickness of the film for single-electron operation was investigated and it was confirmed that the tunneling occurred at 2.1 nm.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.132-138
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• 2021

Electrochromic devices (ECDs) have been drawing great attention due to their high color contrast, low power consumption, and memory effect, and can be used in smart windows, automatic dimming mirrors, and information display devices. As with other electronic devices such as LEDs (light emitting diodes), solar cells, and transistors, the mechanical flexibility of ECDs is one of the most important issue for their potential applications. In this paper, we report on flexible ECDs (f-ECDs) fabricated using an all-in-one EC gel, which is a mixture of electrolyte and EC material. The f-ECDs are compared with rigid ECDs (r-ECDs) on ITO glass substrate in terms of color contrast, coloration efficiency, and switching speed. It is confirmed that the f-ECDs embedding all-in-one gel show strong blue absorption and have competitive EC performance. Repetitive bending tests show a degradation of electrochromic performance, which must be improved using an optimized device fabrication process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.296-300
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• 2021

The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Journal of IKEEE
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• v.26 no.4
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• pp.553-559
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• 2022

In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.

• Journal of the Korean Society of Radiology
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• v.16 no.7
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• pp.969-974
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• 2022

In order to maximize dynamic range and to minimize image lag in digital X-ray imaging, diminishing residual parasitic capacitance in photodiode in pixels is critically necessary. These requirements are more specifically requested in dynamic X-ray imaging with high frame rate and low image lag for industrial 2D/3D automated X-ray inspection and medical CT imaging. This study proposes duoPIX^TM X-ray imaging sensor for the first time that is composed of reset thin film transistor, readout thin film transistor and photodiode in a pixel. To verify duoPIX^TM X-ray imaging sensor, designing duoPIX^TM pixel and imaging sensor was executed first then X-ray imaging sensor with 105 ㎛ pixel pitch, 347 mm × 430 mm imaging area and 3300 × 4096 pixels (13.5M pixels) was fabricated and evaluated by using module tester and image viewer specifically for duoPIX^TM imaging sensor.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.3
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• pp.205-210
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• 2022

A novel OLED pixel circuit is proposed in this paper that uses only n-type thin-film transistors(TFTs) to improve the luminance non-uniformity of the AMOLED display caused by the threshold voltage variation of an OLED driving TFT. The proposed OLED pixel circuit is composed of 6 n-channel TFTs and 2 capacitors. The operation of the proposed OLED pixel circuit consists of the capacitor initializing period, threshold voltage sensing period of an OLED·driving TFT, image data voltage writing period, and OLED·emitting period. As a result of SmartSpice simulation, when the threshold voltage of·OLED·driving TFT varies from 1.2 V to 1.8 V, the proposed OLED pixel circuit has a maximum current error of 5.18 % at IOLED = 1 nA. And, when the OLED cathode voltage rises by 0.1 V, the proposed OLED pixel circuit has very little change in the OLED current compared to the conventional OLED pixel circuit. Therefore, the proposed pixel circuit exhibits superior compensation characteristics for the threshold voltage variation of an OLED driving TFT and the rise of the OLED cathode voltage compared to the conventional OLED pixel circuit.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.116-121
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• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.