• 제목/요약/키워드: Total-etch

검색결과 68건 처리시간 0.018초

Effect of chlorhexidine application on the bond strength of resin core to axial dentin in endodontic cavity

  • Kim, Yun-Hee;Shin, Dong-Hoon
    • Restorative Dentistry and Endodontics
    • /
    • 제37권4호
    • /
    • pp.207-214
    • /
    • 2012
  • Objectives: This study evaluated the influence of chlorhexidine (CHX) on the microtensile bonds strength (${\mu}TBS$) of resin core with two adhesive systems to dentin in endodontic cavities. Materials and Methods: Flat dentinal surfaces in 40 molar endodontic cavities were treated with self-etch adhesive system, Contax (DMG) and total-etch adhesive system, Adper Single Bond 2 (3M ESPE) after the following surface treatments: (1) Priming only (Contax), (2) CHX for 15 sec + rinsing + priming (Contax), (3) Etching with priming (Adper Single Bond 2), (4) Etching + CHX for 15 sec + rinsing + priming (Adper Single Bond 2). Resin composite build-ups were made with LuxaCore (DMG) using a bulk method and polymerized for 40 sec. For each condition, half of specimens were submitted to ${\mu}TBS$ after 24 hr storage and half of them were submitted to thermocycling of 10,000 cycles between $5^{\circ}C$ and $55^{\circ}C$ before testing. The data were analyzed using ANOVA and independent t-test at a significance level of 95%. Results: CHX pre-treatment did not affect the bond strength of specimens tested at the immediate testing period, regardless of dentin surface treatments. However, after 10,000 thermocycling, all groups showed reduced bond strength. The amount of reduction was greater in groups without CHX treatments than groups with CHX treatment. These characteristics were the same in both self-etch adhesive system and total-etch adhesive system. Conclusions: 2% CHX application for 15 sec proved to alleviate the decrease of bond strength of dentin bonding systems. No significant difference was shown in ${\mu}TBS$ between total-etching system and self-etching system.

Pt 박막의 반응성 이온식각 (Reactive Ion Etching of Pt Thin Films)

  • 양정승;김민홍;윤의준
    • 한국진공학회지
    • /
    • 제5권3호
    • /
    • pp.263-267
    • /
    • 1996
  • Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

  • PDF

Cl2/HBr/O2 고밀도 플라즈마에서 비정질 실리콘 게이트 식각공정 특성 (Characteristics of Amorphous Silicon Gate Etching in Cl2/HBr/O2 High Density Plasma)

  • 이원규
    • Korean Chemical Engineering Research
    • /
    • 제47권1호
    • /
    • pp.79-83
    • /
    • 2009
  • 본 연구에서 고밀도 플라즈마 식각 장치를 사용한 비정질 실리콘 막의 게이트 전극선 형성공정에서 여러 가지 식각 변수가 치수 제어와 식각 속도 및 식각 선택비 등 식각 특성에 미치는 영향을 분석하였다. $Cl_2/HBr/O_2$로 구성된 식각 기체의 전체 유량을 증가시키면 비정질 실리콘의 식각 속도가 증가하나 식각 전후의 형상치수는 변화없이 거의 일정하였다. 전체 유량을 고정시키고 $Cl_2$와 HBr 간의 유량비를 변화시키면 HBr의 유량이 커질수록 비정질 실리콘의 식각 속도가 감소하였다. $O_2$의 유량을 증가시키면 산화막의 식각 속도가 상대적으로 낮아져 식각 선택비를 증가시켜 식각 공정의 안정성을 높이나 게이트 전극선을 경사지게 하는 특성을 보인다. Source power의 증가는 비정질 실리콘 식각 속도의 증가와 더불어 형상치수의 증가를 가져오며, bias power의 증가는 비정질 실리콘과 산화막의 식각 속도를 증가시키나 식각 선택비를 크게 감소시키는 경향을 보였다.

Via Contact 형성을 위한 산화막 식각공정의 신경망 모델 (Neural Network Models of Oxide Film Etch Process for Via Contact Formation)

  • 박종문;권성구;박건식;유성욱;배윤구;김병환;권광호
    • 한국전기전자재료학회논문지
    • /
    • 제15권1호
    • /
    • pp.7-14
    • /
    • 2002
  • In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

접착제의 접착변수가 레진계 근관충전제의 근단밀폐효과에 미치는 영향 (The effects of total-etch, wet-bonding, and light-curing of adhesive on the apical seal of a resin-based root canal filling system)

  • 류원일;손원준;백승호;이인한;조병훈
    • Restorative Dentistry and Endodontics
    • /
    • 제36권5호
    • /
    • pp.385-396
    • /
    • 2011
  • 연구목적: 본 연구는 치근벽의 전처리 개념과 접착제의 중합방법이 레진계 근관충전제의 치근단 밀폐능에 미치는 영향을 평가하였다. 연구 재료 및 방법: 3가지 다른 접착변수를 조합하여 충전한 Resilon-RealSeal 시스템의 근단미세누출을 색소침투법을 이용하여 통상의 가타퍼쳐 충전과 비교하였다. 실험군은 자가부식형 RealSeal primer와 이중중합형 RealSeal sealer를 이용하여 Resilon 충전한 SEDC군, 산부식없이 Scotchbond Multi-Purpose primer를 적용한 후 접착제는 광중합하고 Resilon을 충전한 NELC군, 및 Scotchbond Multi-Purpose의 접착강화제와 접착제를 total etch/wet bonding과 광중합의 술식을 정확하게 지켜서 Resilon을 충전한 TELC군으로 구분하였다. 대조군(GPCS)에서는 통상의 AH26 plus sealer를 사용하여 가타퍼쳐를 충전 하였다. 결과: 치아장축방향의 색소침투는 TELC군에서 GPCS군과 SEDC군에 비해 유의하게 작았다(Kruskal-Wallis test, p < 0.05). 횡단면의 미세누출 점수도 TELC군이 근첨으로부터 2 - 5 mm의 범위에서 다른 군에 비해 유의하게 낮았다(Kruskal-Wallis test, p < 0.05). 결론: 레진계 근관충전제를 사용 시에는, 자가부식형 전처리제와 이중중합형 sealer보다는, total etch/wet bonding 개념과 적절한 광중합을 도모하는 전처리제 및 접착제의 사용이 치근단 미세누출을 감소시키므로 추천된다.

Gate CD Control for memory Chip using Total Process Proximity Based Correction Method

  • Nam, Byung--Ho;Lee, Hyung-J.
    • Journal of the Optical Society of Korea
    • /
    • 제6권4호
    • /
    • pp.180-184
    • /
    • 2002
  • In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

The effect of different adhesive system applications on push-out bond strengths of glass fiber posts

  • Kivanc, Bagdagul Helvacioglu;Arisu, Hacer Deniz;Uctasli, Mine Betul;Okay, Tufan Can
    • The Journal of Advanced Prosthodontics
    • /
    • 제5권3호
    • /
    • pp.305-311
    • /
    • 2013
  • PURPOSE. Over the past years, the adhesion of fiber posts luted with simplified adhesive systems has been a matter of great interest. The aim of this study was to assess the post retentive potential of a self-adhesive resin cement using different adhesive systems to compare the push-out bond strengths of fiber posts. MATERIALS AND METHODS. The post spaces of 56 mandibular premolar roots were prepared and divided into 4 experimental groups and further divided into 2 subgroups according to testing time (n=7). The fiber posts (Rely X Fiber Post) were luted with a self-adhesive resin cement (RelyX Unicem) and one of the following adhesive systems: no adhesive, a total-etch adhesive resin (Single Bond), a two-step self-etch adhesive resin (Clearfil SE Bond) and a one-step self-etch adhesive resin (Clearfil S3 Bond). Each root was cut horizontally, and 1.5 mm thick six root segments were prepared. Push-out tests were performed after one week or three months (0.5 mm/min). Statistical analysis were performed with three-way ANOVA (${\alpha}$=.05). RESULTS. Cervical root segments showed higher bond strength values than middle segments. Adhesive application increased the bond strength. For one week group, the total-etch adhesive resin Single Bond showed higher bond strength than the self-adhesive resin cement RelyX Unicem applied without adhesive resin at middle region. For 3 months group, the two-step self-etch adhesive resin Clearfil SE Bond showed the highest bond strength for both regions. Regarding the time considered, Clearfil SE Bond 3 months group showed higher bond strength values than one week group. CONCLUSION. Using the adhesive resins in combination with the self-adhesive resin cement improves the bond strengths. The bond strength values of two-step self-etch adhesive resin Clearfil SE Bond improved as time passes.

유도결합형 BCl3/Ar 플라즈마를 이용한 Al2O3 박막의 식각 특성 (A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma)

  • 김용근;권광호
    • 한국전기전자재료학회논문지
    • /
    • 제24권6호
    • /
    • pp.445-448
    • /
    • 2011
  • In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

Atomic Force Microscopy와 신경망을 이용한 플라즈마 진단 (Plasma Diagnosis by Using Atomic Force Microscopy and Neural Network)

  • 박민근;김병환
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
    • /
    • pp.138-140
    • /
    • 2006
  • A new diagnosis model was constructed by combining atomic force microscopy (AFM), wavelet, and neural network. Plasma faults were characterized by filtering AFM-measured etch surface roughness with wavelet. The presented technique was evaluated with the data collected during the etching of silicon oxynitride thin film. A total of 17 etch experiments were conducted. Applying wavelet to AFM, surface roughness was detailed into vertical, horizon%at, and diagonal components. For each component, neural network recognition models were constructed and evaluated. Comparisons revealed that the vertical component-based model yielded about 30% improvement in the recognition accuracy over others. The presented technique was evaluated with the data collected during the etching of silicon oxynitride thin film. A total of 17 etch experiments were conducted

  • PDF

극저온 자화 유도 결합 플라즈마를 이용한 Platinum 식각에 관한 연구 (A study on platinum dry etching using a cryogenic magnetized inductively coupled plasma)

  • 김진성;김정훈;김윤택;황기웅;주정훈;김진웅
    • 한국진공학회지
    • /
    • 제8권4A호
    • /
    • pp.476-481
    • /
    • 1999
  • Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

  • PDF