• Title/Summary/Keyword: Total Ionizing Dose

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Recent Trend of Occupational Exposure to Ionizing Radiation in Korea, 2015-2019

  • Lim, Young Khi
    • Journal of Radiation Protection and Research
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    • v.46 no.4
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    • pp.213-217
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    • 2021
  • Background: Radiation exposure can occur as a result of occupational activities utilizing sources of radiation. The average level of occupational exposure is generally similar to the global average, but some workers receive more than this. In this study, the occupational exposure data for workers in Korea to check the recent trend of radiation exposure. Materials and Methods: The data collection and analysis are carried out by two separate periods based on the United Nations Scientific Committee on the Effects of Atomic Radiation (UNSCEAR) survey. One is the year 2003 to 2014 for a recent survey, and the other is 2015 to 2019. All available data were collected by annual reports from radiation dose registry organizations. Results and Discussion: The annual dose over the record level to the total workers did not change much compared with the total increasing number of workers in this period. The dose to the nuclear fuel cycle field has a tendency to decrease. It resulted from the efforts of radiation dose reduction with high technology introduced to this area. Also, it is important result that the radiation dose to the workers in radiography is remarkably reduced. Conclusion: The number of radiation workers and average doses were analyzed for occupational categories in Korea. It still needs cooperative efforts between the dose registry organizations for the efficient dose management of Korean radiation workers.

A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

  • Lho, Young-Hwan
    • Journal of IKEEE
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    • v.15 no.2
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    • pp.143-148
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    • 2011
  • MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

A Radiation-hardened Model Design of CMOS Digital Logic Circuit for Nuclear Power Plant IC and its Total Radiation Damage Analysis (원전용 IC를 위한 CMOS 디지털 논리회로의 내방사선 모델 설계 및 누적방사선 손상 분석)

  • Lee, Min-Woong;Lee, Nam-Ho;Kim, Jong-Yeol;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.6
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    • pp.745-752
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    • 2018
  • ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

Exposure of the Population in the United States to Ionizing Radiation

  • Carter Melvin W.;Oliver Robert W.
    • Journal of Radiation Protection and Research
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    • v.12 no.2
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    • pp.37-50
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    • 1987
  • The exposure of the population in the United States to ionizing radiation has recently been evaluated by the National Council on Radiation Protection and Measurements (NCRP). This was done by constituting six organizational groups to address various phases of the work and the results of this work are summarized in this article. The article is based on the report, by the same title, which is scheduled for publication by the NCRP in September, 1987. The six organizational groups are titled Radiation Exposure from Consumer Products, Natural Background Radiation, Radiation Associated with Medical Examinations, Radiation Received by Radiation Employees, Public Exposure from Nuclear Power, and Exposure from Miscellaneous Environmental Sources. These titles are descriptive of the subject areas covered by each of these separate groups. The data evaluated are for the years 1977-1984 with the majority of the data being for the period 1980-1982. Summary information is presented and discussed for the number of people exposed to given sources, the effective dose equivalent, the average effective dose equivalent to the U.S. population, and the genetically significant dose equivalent. The average annual effective dose equivalent from all sources to the U.S. population is approximately 3.6 mSv (360 mrem). Exposures to natural sources make the largest contribution to this total. Radon and radon decay products contribute 2.0 mSv (200 mrem) whereas the other naturally occurring radionuclides contribute 1.0 mSv (100 mrem). Among man-made or enhanced sources, medical exposures make the largest additional contributions, namely 0.39 mSv (39 mrem) for diagnosis and 0.14 mSv (14 mrem) for nuclear medicine. It was not possible to evaluate exposures for therapy. Most of the other sources of population exposure, including nuclear power and consumer products, are minor. A possible exception would be the use of tobacco products. These exposures are discussed in relation to a negligible individual risk level of $10{\mu}Sv/y$ (1 mrem/y). The NCRP considers exposures below the negligible individual risk level as trivial and as such should be dismissed.

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Assessment of Potential Radiation Dose Rates to Marine Organisms Around the Korean Peninsula

  • Lee, Dong-Myung;Lee, Jun-ho
    • Journal of Radiation Protection and Research
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    • v.41 no.1
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    • pp.1-6
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    • 2016
  • Background: It is very difficult to set a regulatory guidance or criteria for the protection of non-human species from the ionizing radiation, because there are no generally or internationally accepted methods for demonstrating the compliance with such criteria. It is needed that Korea develop the primary dose rate standards for the protection of both aquatic and terrestrial biota in the near future. Materials and Methods: The potential dose rates due to both external and internal radiation exposures to marine organisms such as plaice/flounder, gray mullet, and brown seaweed collected within territorial seas around the Korean Peninsula were estimated. Results and Discussion: The total dose rates to plaice/flounder, gray mullet and brown seaweed due to $^{40}K$, a primordial radionuclide in marine environment, were found to be 0.2%, 0.08% and 0.3% of approximately the values of the Derived Consideration Reference Levels (DCRLs, i.e. $1-10mGy{\cdot}d^{-1}$), respectively, as suggested by the International Commission on Radiological Protection (ICRP) publication 124. The total dose rates to marine fishes and brown seaweed due to anthropogenic radionuclides such as $^{90}Sr$, $^{137}Cs$ and $^{239+240}Pu$ were considered to be negligible compared to the total dose rate due to $^{40}K$. The external exposure to benthic fish due to all radionuclides was much higher than that of pelagic fish. Conclusion: From this study, it is recommended that the further study is required to develop a national regulatory guidance for the evaluation of doses to non-human species.

Test-bed of Total Ionizing Dose (TID) Test by Cosmic Rays for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (금속-산화막 반도체 전계효과 트랜지스터의 우주방사선에 의한 총이온화선량 시험을 위한 테스트 베드)

  • Sin, Gu-Hwan;Yu, Gwang-Seon;Gang, Gyeong-In;Kim, Hyeong-Myeong;Jeong, Seong-In
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.34 no.11
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    • pp.84-91
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    • 2006
  • Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.

Analysis of Radiation Effects in CMOS 0.18um Process Unit Devices (CMOS 0.18um 공정 단위소자의 방사선 영향 분석)

  • Jeong, Sang-Hun;Lee, Nam-Ho;Lee, Min-Woong;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.3
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    • pp.540-544
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    • 2017
  • In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

Investigation of Radiation Effects on the Signal and Noise Characteristics in Digital Radiography (디지털 래디오그라피의 신호 및 잡음 특성에 대한 방사선 영향에 관한 연구)

  • Kim, Ho-Kyung;Cho, Min-Kook;Graeve, Thorsten
    • Journal of Biomedical Engineering Research
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    • v.28 no.6
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    • pp.756-767
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    • 2007
  • For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

  • Minuk Seung;Jong-Gyun Choi ;Woo-young Choi;Inyong Kwon
    • Nuclear Engineering and Technology
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    • v.56 no.1
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    • pp.189-194
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    • 2024
  • This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.