• 한국재료학회지
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• 제12권1호
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• 대한화학회지
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• 제33권4호
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• pp.337-342
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• 1989

비기체 연소란 테르밋 반응과 같이 고체혼합물 내에서 직접 점화할 때 자발적으로 진행되는 매우 격렬한 발열반응이다. 비기체 연소합성법은 빠른 공정, 에너지 절약, 저공정가, 그리고 고순도의 생산품을 만들 수 있는 장점이 있다. 이 비기체 연소법에 의하여 Ti$Si_x$(x=0.6, 0.8, 1.0, 2.0)계의 시료를 외부적인 소결 공정없이 합성하였다. $Ti_5Si_3$와 $Ti_5Si_4$는 각각 육방정계와 정방정계 이었고 TiSi와 $TiSi_2$는 사방정계 이었다. X-선 분석결과는 모두 JCPDS data와 매우 잘 일치하였다. 모든 반응의 연소형은 정류상태 연소였으며 $Ti_5Si_3$, $Ti_5Si_4$ 및 TiSi의 연소파의 전파속도는 0.6cm/sec 이상이었고 $TiSi_2$의 경우는 0.28cm/sec이었다.

• 한국재료학회지
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• 제8권7호
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• pp.579-583
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• 1998

P가 고농도로 도핑된 다결정 Si 기판 위에 Co/Ti 이중층막을 스퍼터 증착하고 급속열처리함으로써 얻어지는 실리사이드 층구조, 실리사이드막의 응집, 그리고 도펀트의 재분포 등을 단결정 Si 기판 위에서의 그것들과 비교하여 조사하였다. 다결정 Si 기판위에 형성한 Co/Si 이중층을 열처리할 때 단결정 기판에서의 경우보다 $CoSi_2$로의 상천이는 약간 더 낮은 온도에서 시작되며, 막의 응집은 더 심하게 일어난다. 또한, 다결정 Si 기판내의 도펀트보다 웨이퍼 표면을 통하여 바깥으로 outdiffusion 함으로써 소실되는 양이 훨씬 더 많다. 이러한 차이는 다결정 Si 내에서의 결정립계 확산과 고농도의 도펀트에 기인한다. Co/Ti/doped-polycrystalline si의 실리사이드화 열처리후의 층구조는 polycrystalline CoSi2/polycrystalline Si 으로서 Co/Ti(100)Si을 열처리한 경우의 층구조인 Co-Ti-Si/epi-CoSi2/(100)Si 과는 달리 Co-Ti-Si층이 사라진다.

• 한국재료학회지
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• 제14권12호
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• 한국세라믹학회지
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• 제53권1호
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• pp.87-92
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• 2016

Due to its stability at high temperature and its layered structure, $Ti_3SiC_2$ MAX phase was considered to the interphase of $SiC_f/SiC$ composite. In this study, $Ti_3SiC_2$ MAX phase powder was deposited on SiC fiber via the electrophoretic deposition (EPD) method. The Zeta potential of the $Ti_3SiC_2$ suspension with and without polyethyleneimine as a dispersant was measured to determine the conditions of the EPD experiments. Using a suspension with 0.03 wt.% ball milled $Ti_3SiC_2$ powder and 0.3 wt.% PEI, $Ti_3SiC_2$ MAX phase was successfully coated on SiC fiber with an EPD voltage of 10 V for 2 h. Most of the coated $Ti_3SiC_2$ powders are composed of spherical particles. Part of the $Ti_3SiC_2$ powders that are platelet shaped are oriented parallel to the SiC fiber surface. From these results we expect that $Ti_3SiC_2$ can be applied to the interphase of $SiC_f/SiC$ composites.

• Tribology and Lubricants
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• 제4권2호
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• 한국재료학회지
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• 제11권2호
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• pp.88-93
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• 2001

$N_2$처리에 의해 Si (001) 기판에 형성된 C49상의 구조를 갖는 에피택셜 $TiSi_2$상의 열적 거동과 결정학적 특성을 X선 회절법 (XRD)과 고분해능 투과전자현미경법 (HRTEM)으로 조사하였다. 에피택결 $C49-TiSi_2$상은 $1000^{\circ}C$ 정도의 고온에서도 안정상인 C54상으로 상변태하지 않고 형태적으로도 고온 특성이 우수하다는 것이 밝혀졌다. HRTEM 결과로부터 에피택결 $TiSi_2$상과 Si 사이의 결정학적 방위관계는 (060) [001]TiSi$_2$//(002) [110]Si임을 알 수 있었고 계면에서의 격자 변형에너지는 misfit 전위의 형성에 의하여 해소되는 것을 확인할 수 있었다. 또한 HRTEM상의 해석과 원자 모델링을 통하여 Si에서 에피택셜 C49-TiSi$_2$상의 형성기구와 C49상의 (020) 면에 존재하는 적층결함을 고찰하였다.

• 한국표면공학회지
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• 제35권3호
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• 한국표면공학회지
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• 제39권6호
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• pp.245-249
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• 2006

In this study, ternary Ti-Mo-N and new quaternary Ti-Mo-Si-N coatings were synthesized on steel substrates(AISI D2) and Si wafers by a hybrid coating system of arc ion plating (AIP) using Ti target and d.c. magnetron sputtering technique using Mo and Si targets in $N_2/Ar$ gaseous mixture. Ternary Ti-Mo-N coatings were substitutional solid-solution of (Ti, Mo)N and showed maximum hardness of approximately 30 GPa at the Mo content of ${\sim}10$. %. The Ti-Mo-Si-N coating with the Si content of 8.8 at. % was a composite consisting of fine (Ti, Mo)N crystallites and amorphous $Si_3N_4$ phase. The hardness of the Ti-Mo-Si(8.8 at. %)-N coatings exhibited largely increased hardness value of ${\sim}48$ GPa due to the microstructural evolution to the fine composite microstructure and the refinement of (Ti, Mo)N crystallites. The average friction coefficient of the Ti-Mo-Si-N coatings largely decreased with increase of Si content. The microstructures of Ti-Mo-Si-N coatings were investigated with instrumental analyses of XRD, XPS, and HRTEM in this work.