• 한국진공학회지
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• 제21권3호
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• pp.158-163
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• 2012

본 연구에서는 폴리머 애자의 자가세정 코팅을 위한 소재로써 $TiO_2$ 박막을 실리콘과 유리, 폴리머애자 기판위에 증착하였다. $TiO_2$ 박막은 $TiO_2$ 세라믹 타겟이 부착된 RF 마그네트론 스퍼터링 장치를 이용하여 증착하였다. $TiO_2$ 박막은 스퍼터링의 다양한 공정조건 중 RF 파워의 크기에 따라 100 nm의 두께로 증착하였다. RF 파워에 따라 증착되어진 $TiO_2$ 박막의 접촉각, 표면거칠기등 표면 특성을 확인하였으며, UV-visible등 광학적 특성을 고찰하여, 구조적 특성과의 관계를 고찰하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• 한국광학회지
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• 제16권2호
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• pp.168-173
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• 2005

고주파 마그네트론 동시 스퍼터링법을 이용하여 $TiO_2$ 박막에 Ag를 도핑한 $Ag/TiO_2$ 박막을 제작하고, 열처리 온도에 따른 박막의 물리적, 화학적 특성을 조사하였다. XRD 측정 결과로부터 금속을 도핑한 박막이 순수 $TiO_2$ 박막보다 결정크기가 더 작은 것을 확인하였으며, SEM 측정 결과로부터 $Ag/TiO_2$ 박막은 순수 $TiO_2$ 박막보다 골자의 크기가 작고 균일하다는 것을 알 수 있었다. 제작된 박막은 가시광선 영역에서 높은 투과율을 나타내었다. $600^{\circ}C$에서 열처리한 박막은 아나타제 결정상이 나타났으며, $900^{\circ}C$에서 열처리한 박막은 아나타제와 루타일상이 혼합되어 나타났다 특히, $900^{\circ}C$에서 열처리한 경우 아나타제에서 루타일로의 상전이에 따른 밴드갭 에너지의 변화에 의해 박막의 흡수단이 장파장 영역으로 이동하였다. 또한 박막 내의 흡수와 산란효과에 의해 투과율이 감소하였다. $Ag/TiO_2$ 박막의 광활성은 순수 $TiO_2$ 박막보다 우수함을 알 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.33-36
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• 1998

Epitaxially grown $Bi_4Ti_3O_{12}$ thin films on the MgO(100) substrates was prepared by dipping-pyrolysis process using metal naphthenates as starting materials. The films annealed at various temperatures were charactrized by X-ray diffraction $\theta$-2$\theta$ scans and pole-figure analysis ($\beta$ scanning). Highly c-axia oriented Bi4Ti3O12 films were crystallized by heat-treatment at 700$^{\circ}$ and 75$0^{\circ}C$ from precursor films pyrolyzed at 50$0^{\circ}C$. The X-ray pole-figure analysis indicated that the $Bi_4Ti_3O_{12}$ thin films have an epitaxial relationship with the MgO(100) substrates.

• 한국세라믹학회지
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• 제43권6호
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• 한국세라믹학회지
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• 제33권2호
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• 한국광학회지
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• 제18권2호
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• pp.171-177
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• 2007

전자빔 증착법을 이용하여 산소 분압에 따라 $TiO_2$ 박막을 제작하고, 열처리 온도에 따른 박막의 구조적 특성과 광학적 특성을 분석 하였다. $TiO_2$ 박막들의 물리적 특성은 주입된 산소량에 의존하였다. 주입된 산소량이 증가 할수록 상전이 온도가 높아지고, 가시광선 영역에서 $TiO_2$ 박막의 투과율이 증가하였다. 그리고 주입된 산소량이 작은 경우, $700^{\circ}C$에서 $1100^{\circ}C$로 열처리 후 $TiO_2$ 박막의 흡수단 이 좀더 장파장으로 이동하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.