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http://dx.doi.org/10.4191/KCERS.2006.43.6.362

Integration of Ba0.5Sr0.5TiO3Epitaxial Thin Films on Si Substrates and their Dielectric Properties  

Kim, Eun-Mi (Photonic and Electronic Thin Films Laboratory, Chonnam National University)
Moon, Jong-Ha (Department of Materials Science and Engineering, Chonnam National University)
Lee, Won-Jae (Department of Information Material Engineering, Dongeui University)
Kim, Jin-Hyeok (Department of Materials Science and Engineering, Chonnam National University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.6, 2006 , pp. 362-368 More about this Journal
Abstract
Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.
Keywords
$Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO); Crystalline oxide on Si; PLD; Dielectric materials;
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1 L. S. J. Peng, X. X. Xi, B. H. Moeckly, and S. P. Alpay, 'Strain Relaxation During In Situ Growth of $SrTiO_3$ Thin Films,' Appl. Phys. Lett., 83 4592-94 (2003)   DOI   ScienceOn
2 J. J. Zhu, B. X. Lin, X. K. Sun, R. Yao, C. S. Shi, and Z. X. Fu, 'Heteroepitaxy of ZnO Film on Si (111) Substrate Using a 3C-SiC Buffer Layer,' Thin Solid Films, 478 218- 22 (2005)   DOI   ScienceOn
3 A. T. Findikoglu, Q. X. Jia, X. D. Wu, G. J. Chen, T. Venkatesan, and D. W. Reagor, 'Tunable and Adaptive Bandpass Filter Using a Nonlinear Dielectric Thin Film of $SrTiO_3$,' Appl. Phys. Lett., 68 1651-53 (1996)   DOI
4 A. T. Findikoglu, R. Camassa, G. Lythe, and Q. X. Jia, 'Dielectric Nonlinearity and Stochastic Effects in Strontium Titanate,' Appl. Phys. Lett., 80 3391-93 (2002)   DOI   ScienceOn
5 K. Abe, N. Yanase, S. Komatsu, K. Sano, N. Fukushima, and T. Kawakubo, 'Dielectric and Ferroelectric Properties of Heteroepitaxial $Ba_xSr_{1-x}TiO_3$ Films Grown on $SrRuO_3/SrTiO_3$ Substrates,' Ieice Transactions on Electronics, E81C 505-12 (1998)
6 W. B. Wu, K. H. Wong, and C. L. Choy, 'Epitaxial Growth of $SrTiO_3$ Films with Different Orientations on TiN Buffered Si(001) by Pulsed Laser Deposition(PLD),' Thin Solid Films, 360 103-06 (2000)   DOI   ScienceOn
7 C. J. Lu, L. A. Bendersky, K. Chang, and I. Takeuchi, 'Dissociation and Evolution of Threading Dislocations in Epitaxial $Ba_{0.3}Sr_{0.7}TiO_3 $ Thin Films Grown on (001) $LaAlO_3$,' J. Appl. Phys., 93 512-21 (2003)   DOI   ScienceOn
8 T. Delage, C. Champeaux, A. Catherinot, J. F. Seaux, V. Madrangeas, and D. Cros, 'High-K BST Films Deposited on MgO by PLD with and without Buffer-Layer,' Thin Solid Films, 453 279-84 (2004)   DOI   ScienceOn
9 M. B. Lee, M. Kawasaki, M. Yoshimoto, and H. Koinuma, 'Heteroepitaxial Growth of $BaTiO_3$ Films on Si by Pulsed Laser Deposition(PLD),' Appl. Phys. Lett., 66 1331-33 (1995)   DOI   ScienceOn
10 T. U. Kim, B. R. Kim, W. J. Lee, J. H. Moon, B. T. Lee, and J. H. Kim, 'Integration of Artificial $SrTiO_3/BaTiO_3$ Supperlattice on Si Substrates Using a TiN Buffered Layer by Pulsed Laser Deposition(PLD) Method,' J. Crystal. Growth, 289 540-46 (2006)   DOI   ScienceOn
11 K. Koike, T. Komuro, K. Ogata, S. Sasa, M. Inoue, and M. Yano, '$CaF_2$ Growth as a Buffer Layer of ZnO/Si Heteroepitaxy,' Physica E, 21 679-83 (2004)   DOI   ScienceOn
12 J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, 'Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor Deposition(PVD),' Appl. Phys. Lett., 61 1290-92 (1992)   DOI
13 Y. A. Shim, C. J. Yoo, J. H. Moon, B. T. Lee, S. S. Kim, and J. H. Kim, 'Highly Oriented Growth of a $Pb(Mg_{1/3}Nb_{2/3})O_3$ Thin Film on a Si(001) Substrate Using a TiN Buffer Layer,' Jpn. J. Appl. Phys., 42 7516-19 (2003)   DOI
14 R. D. Vispute, J. D. Budai, J. Narayan, K. Dovidenko, K. Jagannadham, N. Parikh, and A. Suvkhanov, 'Heteroepitaxial Structures of $SrTiO_3/TiN$ on Si(100) by In Situ Pulsed Laser Deposition(PLD),' J. Appl. Phys., 80 6720-24 (1996)   DOI   ScienceOn
15 J. Narayan, A. K. Sharma, A. Kvit, C. Jin, A. F. Muth, and O. W. Holland, 'Novel Cubic $Zn_xMg_{1-x}O $Epitaxial Heterostructures on Si (100) Substrates,' Soild State Commun., 121 9-13 (2002)   DOI   ScienceOn
16 J. Narayan and B. C. Larson, 'Domain Epitaxy: A Unified Paradigm for Thin Film Growth,' J. Appl. Phys., 93 278-85 (2003)   DOI   ScienceOn
17 K. Horikawa, T. Kuroiwa, and N. Mikami, 'Dielectric Relaxation of $(Ba,Sr)TiO_3$ Thin Films,' Jpn. J. Appl. Phys., Part 1, 34 5478-82 (1995)   DOI
18 C. Wang, B. L. Cheng, S. Y. Wang, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, 'Effect of Oxygen Pressure on Lattice Parameter, Orientation, Surface Morphology, and Deposition Rate of $(Ba_{0.02}Sr_{0.98}TiO_3)$Thin Films Grown on MgO Substrate by Pulsed Laser Deposition(PLD),' Thin Soild Films, 485 82-9 (2005)   DOI   ScienceOn
19 T. Delage, C. Champeaux, A. Catherinot, J. F. Seaux, V. Madrangeas, and D. Cros, 'High-K BST Films Deposited on MgO by PLD with and without Buffer-Layer,' Thin Solid Films, 453-454 279-84 (2004)   DOI   ScienceOn
20 F. W. Van Keuls, R. R. Romanofsky, D. Y. Bohman, M. D. Winters, F. A. Miranda, C. H. Mueller, R. E. Treece, T. V. Rivkin, and D. Galt, '$(YBa_2Cu_3O_{7-}Au)/SrTiO_3/LaAlO_3$ Thin Film Conductor/Ferroelectric Coupled Microstripline Phase Shifters for Phased Array Applications,' Appl. Phys. Lett., 71 3075-77 (1997)   DOI   ScienceOn
21 M. C. Chiu, C. F. Cheng, W. T. Wu, and F. S. Shieu, 'Effect of Crystallinity on the Dielectric Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Films,' J. Electrochemical Soc., 152 [6] F66-F70 (2005)   DOI   ScienceOn
22 M. Hirarani, K. Imagawa, and K. Takagi, 'Orientation and Crystal Structure of $SrTiO_3$ Thin Films Prepared by Pulsed Laser Deposition(PLD),' Jpn. J. Appl. Phys., 34 254-60 (1995)   DOI
23 C. M. Jin, R. Narayan, A. Tiwari, H. H. Zhou, A. Kvit, and J. Narayan, 'Epitaxial Growth of Zinc Oxide Thin Films on Silicon,' Mat. Sci. Eng. B-Solid, 117 348-54 (2005)   DOI   ScienceOn
24 T. Horikawa, T. Makita, J. Tanimura, N. Mikami, and K. Sato, 'Dielectric Properties of $(Ba_xSr_{1-x})TiO_3 $Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application,' Jpn. J. Appl. Phys., Part 1, 33 5187- 91 (1994)   DOI
25 J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. F. Muth, and O. W. Holland, 'Novel Cubic $Zn_xMg_{1-x}O$ Epitaxial Heterostructures on Si (100) Substrates,' Solid State Commun., 121 9-13 (2002)   DOI   ScienceOn