• 한국재료학회지
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• 제17권3호
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• pp.125-131
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• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.17-17
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• 2010

We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• 산업기술연구
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• 제25권A호
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.995-998
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• 2003

MOCVD 법을 이용하여 TiO$_2$ 박막을 제작하여, 투과곡선을 비교적 간단하게 분석할 수 있는 포락선방법을 사용하여 기판온도에 따른 TiO$_2$ 박막의 굴절률, 소광계수 등의 광학적 상수들을 구하였다. 투과곡선의 모사를 실시하여 포락선방법으로 구한 값들이 매우 신뢰도가 높음을 입증하였다. TiO$_2$ 박막은 35$0^{\circ}C$ 에서 부터 결정화가 되기 시작하여, 40$0^{\circ}C$ 이상에서 tetragonal structure 를 갖는 anatase 상으로 완전히 결정화됨을 알 수 있다. 기판온도에 따른 증착률을 Arrhenius plot 하여 구한 활성화에너지는 reaction limited 단계에서 17.8 kcal/mol 이었다. 포락선방법을 이용하여 구한 TiO$_2$ 박막의 굴절률 (λ=632.8 nm) 은 기판온도가 40$0^{\circ}C$ 에서 $600^{\circ}C$ 로 증가함에 따라 2.19 에서 2.32 로 증가하는 추세를 나타내었고, 소광계수는 0.021 에서 0.007로 감소하는 경향을 나타내었다.

• 한국세라믹학회지
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• 제40권12호
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• pp.1189-1196
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• 2003

Sol-gel법으로 강유전성 B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) stock solution을 합성하고 Pt/Ti $O_2$/ $SiO_2$/Si 기판위에 스핀코팅법으로 BLT 박막을 증착하였다. 본 실험에서는 Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, Ti(IV)i-propoxide를 출발물질로 사용하였으며 2-Methoxyethanol을 용매로 사용하였다. 급속열처리(RTA)가 BLT 박막의 결정성장을 촉진시키기 위해 사용되었고, RTA를 실시한 시편과 RTA를 실시하지 않은 시편의 전기적 특성을 비교하였다. RTA를 실시한 후 72$0^{\circ}C$에서 로 열처리 한 BLT 박막의 경우 5V 인가 전압 하에서 2Pr 값은 RTA를 실시하지 않은 경우보다 27% 증가한 20.46$\mu$C/$ extrm{cm}^2$이었다.