• Biomolecules & Therapeutics
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• 제22권5호
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• pp.390-399
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• 2014

Chalcones (1,3-diaryl-2-propen-1-ones), a flavonoid subfamily, are widely known for their anti-inflammatory properties. Propenone moiety in chalcones is known to play an important role in generating biological responses by chalcones. In the present study, we synthesized chalcone derivatives structurally modified in propenone moiety and examined inhibitory effect on nitric oxide (NO) production and its potential mechanisms. Among the chalcone derivatives used for this study, TI-I-174 (3-(2-Hydroxyphenyl)-1-(thiophen-3-yl)prop-2-en-1-one) most potently inhibited lipopolysaccharide (LPS)-stimulated nitrite production in RAW 264.7 macrophages. TI-I-174 treatment also markedly inhibited inducible nitric oxide synthase (iNOS) expression. However, TI-I-174 did not significantly affect production of IL-6, cyclooxygenase-2 (COX-2) and tumor necrosis factor-${\alpha}$ (TNF-${\alpha}$), implying that TI-I-174 inhibits production of inflammatory mediators in a selective manner. Treatment of macrophages with TI-I-174 significantly inhibited transcriptional activity of activator protein-1 (AP-1) as determined by luciferase reporter gene assay, whereas nuclear factor-${\kappa}B$ (NF-${\kappa}B$) activity was not affected by TI-I-1744. In addition, TI-I-174 significantly inhibited activation of c-Jun-N-Terminal kinase (JNK) without affecting ERK1/2 and p38MAPK, indicating that down-regulation of iNOS gene expression by TI-I-174 is mainly attributed by blockade of JNK/AP-1 activation. We also demonstrated that TI-I-174 treatment led to an increase in heme oxygenase-1 (HO-1) expression both at mRNA and protein level. Transfection of siRNA targeting HO-1 reversed TI-I-174-mediated inhibition of nitrite production. Taken together, these results indicate that TI-I-174 suppresses NO production in LPS-stimulated RAW 264.7 macrophages via induction of HO-1 and blockade of AP-1 activation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.131-132
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• 2015

$Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

• 자원환경지질
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• 제55권1호
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• pp.77-95
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• 2022

고남산 반려암 복합체는 경기도 포천군 관인면 일대에 분포하고, 마그마 분화과정의 결과 다양한 반려암질 화성암과 Fe-Ti oxide 광화작용으로 구성되며, 후기 화성작용 동안 반려암질 페그마타이트와 휘석-인회석-저어콘 우세 암석들은 다시 반려암질 모암을 관입하고 있다. 반려암질 페그마타이트는 다양한 규모와 형태로 반려암질 모암의 몬조섬록암과 산화물 반려암(oxide gabbro)을 관입하고, 고품위 Fe-Ti oxide 광화작용과 공간적으로 밀접하게 산출한다. 반려암질 페그마타이트는 구성광물에 따라 사장석-각섬석 우세와 휘석-감람석 우세 페그마타이트로 세분되며, 두 암상은 명확한 암상경계를 갖는다. 사장석-각섬석 페그마타이트는 휘석, 티탄철석, 스핀, 인회석, 흑운모가 부수적으로 주 구성광물의 간극을 채운다. 부분적으로 거정의 라스(lath)상 사장석(An_2-26Ab_72-98Or_0-2) 결정 간 각진 공간을 각섬석이 충전하는 간립상 조직(intergraunlar texture)을 보인다. 휘석-감람석 페그마타이트는 암회색 내지 흑색을 띠며, 부수적으로 자철석, 티탄철석, 첨정석, 방해석, 인회석 등이 함께 산출한다. 휘석(En_35-36Fs_8-9Wo₅₅)과 감람석(Fo_84-85Fa_15-16)은 부분적으로 세립의 자형 감람석을 거정의 휘석이 에워싸는 포이킬리틱 조직(poikilitic texture)을 보인다. Fe-Ti oxide 광물은 자철석과 티탄철석으로 구성되고, 주로 먼저 형성된 규산염 광물들의 간극을 충전한다. 그 결과로 Fe-Ti oxide 광물들은 주변 규산염광물들과의 경계부를 따라 각섬석과 흑운모로 구성된 반응연(reaction rim)이 발달한다. 자철석은 결정 내 다량의 산화용리(oxyexsolved)된 격자형(trellis type) 티탄철석과 첨정석 엽편을 포함하고, 자철석 호정원소인 Ti, Al, Mg, V 등이 농집되어 있다. 반려암질 페그마타이트와 반려암 모암 간 암상경계와 광물학적 비평형은 반려암질 페그마타이트의 형성이 마그마 분화과정 중 반려암 모암으로부터 현 위치에서 직접적으로 형성되기 보다는 Fe-부화 멜트(혹은 용액)로부터 현 위치로 이동 후 집적되었을 것으로 사료된다. 따라서 후기 화성활동의 추가 연구는 반려암질 마그마의 분화과정 뿐 아니라, 마그마 분화과정의 결과로 반려암질 암석 내에 형성된 Fe-Ti oxide 광화작용을 이해하는데 중요한 정보를 제공할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• 한국진공학회지
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• 제1권1호
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• pp.168-175
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• 1992

Ion beam mixing과 질소분위기에서 Rapid Thermal Annealing을 이용하여 형성된 TiSi2 박막의 표면과 계면의 물리적, 전기적 특성이 크게 개선되었으며, 기존 Ti-SALICIDE 의 신뢰도 측면에서 문제가 될 수 있는 Oxide Spacer 상에서의 Lateral Silicide 형성이 최 대한 억제된 수 있었다. 또한 Ti-SALICIDE 공정에서의 Ti/Si와 Ti/SiO2의 Interaction을 반응 조건별로 연구하였다.

• 자원환경지질
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• 제50권5호
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• pp.375-387
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• 2017

한반도의 중서부에 위치한 소연평도의 각섬암 내 Fe-Ti 광화작용은 우리나라의 대표적인 정마그마형 Fe-Ti 광상중 하나이다. 각섬암은 북서-남동방향의 선캠브리아기 변성퇴적암류를 평행하게 관입하고 있다. 각섬암의 하부는 장석-우세 우백질과 각섬석-Fe-Ti 산화광물-우세 우흑질 각섬암이 교호하는 화성기원 층상구조(igneous layering)의 발달이 특징이다. 우백질과 우흑질 각섬암은 서로 혼재되어 있거나, 뚜렷한 경계면을 보인다. 반면에 상부 각섬암은 하부 각섬암에 비해 더 복잡한 산상(함석류석 각섬암, 조립질 각섬암, 편상 각섬암)으로 산출되고, 괴상의 Fe-Ti 광체가 우흑질의 편상 각석암과 교호하고 있다. 남북과 동서방향의 단층작용은 상부 각섬암의 Fe-Ti 광체와 하부 각섬암의 층상구조를 각각 변이 시켰다. 우백질과 우흑질 각섬암 및 Fe-Ti 광석의 조성은 각 암상을 구성하고 있는 광물조합을 잘 반영하고 있다. 각섬암은 강한 정(+)의 Eu 이상(anomaly)을 보이나, Fe-Ti 광석은 미약한 음(-)의 Eu 이상을 보이고 있다. 각섬암을 구성하고 있는 장석(안데신-올리고클레이스)과 Fe-Ti 산화광물들은 각섬암 전반에 걸쳐 일정한 조성을 가진다. 반면에 각섬석은 상대적으로 넓은 범위의 조성을 가지나, 화학적 분화특성을 반영하지는 않는다. 하부 각섬암 내 화성기원 층상구조는 단일 층상구조 내 혹은 층상구조 간 광물조성 변화가 관찰되지 않는다. 이것은 심부에서 지속적인 새 마그마의 공급이나 주변암과의 동화작용에 의해 Fe가 공급되지 않았음을 지시한다. 각섬암과 Fe-Ti 광석의 상반된 Eu 이상은 각섬암의 초기 분별정출작용 동안 사장석의 정출에 의해 잔류 유체 내 Fe의 부화가 진행되었을 가능성을 지시한다. 따라서 각섬암의 후기 분별정출작용 단계에서 Fe-부화 잔류 유체는 유체 주입(filter pressing)에 의해 상부 각섬암 내로 상승 및 층상의 괴상 Fe-Ti 광화작용을 야기한 것으로 간주된다.

• Corrosion Science and Technology
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• 제16권6호
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• pp.317-327
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• 2017

The change in the oxidation behavior of three types of B-added ultrahigh strength martensitic steels containing Ti and Nb induced by applying constant cathodic current was investigated. In a 3% NaCl+0.3% $NH_4SCN$ solution, the overall polarization behavior of the three alloys was similar, and degradation of the oxide film was observed in the three alloys after applying constant cathodic current. A significant increase in the anodic current density was observed in the Nb-added alloy, while it was diminished in the Ti-added alloy. Both Ti and Nb alloying decreased the hydrogen overpotential by forming NbC and TiC particles. In addition, the thickest oxide film was formed on the Ti-added alloy, but the addition of Nb decreased the film thickness. Therefore, it was concluded that the remarkable increase in the anodic current density of Nb-added alloy induced by applying constant cathodic current density was attributed to the formation of the thinnest oxide film less protective to hydrogen absorption, and the addition of Ti effectively blocked the hydrogen absorption by forming TiC particles and a relatively thick oxide film.

• 한국태양에너지학회 논문집
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• 제26권4호
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• Journal of Information Display
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• 제13권2호
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• pp.61-66
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• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.310-316
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• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1{\mu}m$ in coating thickness. AISI 52100 steel ball was used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction (XRD). Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and sliding tests.