• Title/Summary/Keyword: Ti-oxide

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Support Effect of Arc Plasma Deposited Pt Nanoparticles/TiO2 Substrate on Catalytic Activity of CO Oxidation

  • Qadir, Kamran;Kim, Sang Hoon;Kim, Sun Mi;Ha, Heonphil;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.261-261
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    • 2013
  • The smart design of nanocatalysts can improve the catalytic activity of transition metals on reducible oxide supports, such as titania, via strong metal-support interactions. In this work, we investigatedtwo-dimensional Pt nanoparticle/titania catalytic systems under the CO oxidation reaction. Arc plasma deposition (APD) and metal impregnation techniques were employed to achieve Pt nanoparticle deposition on titania supports, which were prepared by multitarget sputtering and sol-gel techniques. APD Pt nanoparticles with an average size of 2.7 nm were deposited on sputtered and sol-gel-prepared titania films to assess the role of the titania support on the catalytic activity of Pt under CO oxidation. In order to study the nature of the dispersed metallic phase and its effect on the activity of the catalytic CO oxidation reaction, Pt nanoparticles were deposited in varying surface coverages on sputtered titania films using arc plasma deposition. Our results show an enhanced activity of Pt nanoparticles when the nanoparticle/titania interfaces are exposed. APD Pt shows superior catalytic activity under CO oxidation, as compared to impregnated Pt nanoparticles, due to the catalytically active nature of the mild surface oxidation and the active Pt metal, suggesting that APD can be used for large-scale synthesis of active metal nanocatalysts.

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Current- voltage (I-V) Characteristics of the Molecular Electronic Devices using Various Organic Molecules

  • Koo, Ja-Ryong;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Jung-Soo;Gong, Doo-Won;Kim, Young-Kwan
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.154-158
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    • 2005
  • Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

Ferroelectric properties of BLT films deposited on $ZrO_2$Si substrates

  • Park, Jun-Seo;Lee, Gwang-Geun;Park, Kwang-Hun;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.172-173
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    • 2006
  • Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

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Magnetic Mineral Identification in Meteorites (잔류자화비를 이용한 운석의 자성광물 판별)

  • Kim, In-Ho;Yu, Yong-Jae
    • Journal of the Mineralogical Society of Korea
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    • v.24 no.1
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    • pp.31-36
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    • 2011
  • Meteorites are extraterrestrial solid rock fragments that fell from the outer space. Investigating mineral magnetic properties of the Meteorites is essential in understanding the evolution of planets and asteroids in the Solar System. In particular, magnetic characterization of magnetic mineral can provide constraints on the progress of differentiation in ancient planetary bodies. In the present study, ratio of thermoremanent magnetization (TRM) over saturation isothermal remanent magnetization (SIRM) was applied to diagnose the magnetic minerals in meteorites and igneous rocks. Distinctive classification of TRM/SIRM suggests that kamacite, tetrataenite, magnetite, and (Cr,Ti)-rich iron oxide are responsible for the magnetization of H5 Richardton, LL6 St. Severin, ALH84001, and DaG476, respectively. The TRM/SIRM ratio could be an efficient tool in identifying magnetic minerals especially when rocks or meteorites contain unstable material under heating.

Corrosion Behavior of Inconel Alloys in a Hot Lithium Molten Salt under an Oxidizing Atmosphere (고온 리튬용융염계 산화분위기에서 Inconel 합금의 부식거동)

  • Cho, Soo-Hang;Seo, Chung-Seok;Yoon, Ji-Sup;Park, Seoung-Won
    • Korean Journal of Materials Research
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    • v.16 no.9
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    • pp.557-563
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    • 2006
  • The electrolytic reduction of spent oxide fuel involves the liberation of oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. So, it is essential to choose the optimum material for the process equipment handling molten salt. In this study, corrosion behavior of Inconel 713LC, MA 754, X-750 and 718 in the molten salt $LiCl-Li_2O$ under an oxidizing atmosphere was investigated at $650^{\circ}C$ for $72{\sim}216$ hours. Inconel 713LC alloy showed the highest corrosion resistance among the examined alloys. Corrosion products of Inconel 713LC were $Cr_2O_3,\;NiCr_2O_4$ and NiO, and those of Inconel MA 754 were $Cr_2O_3\;and\;Li_2Ni_8O_{10}$ while $Cr_2O_3,\;NiFe_2O_4\;and\;CrNbO_4$ were produced from Inconel 718. Also, corrosion products of Inconel X-750 were found to be $Cr_2O_3,\;NiFe_2O_4\;and\;(Cr,Nb,Ti)O_2$. Inconel 713LC showed local corrosion behavior and Inconel MA 754, 718, X-750 showed uniform corrosion behavior.

A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory (비-휘발성 저항 변화 메모리 응용을 위한 WOx 물질의 전기적 특성 연구)

  • Jung, Kyun Ho;Kim, Kyong Min;Song, Seung Gon;Park, Yun Sun;Park, Kyoung Wan;Sok, Jung Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.5
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    • pp.268-273
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    • 2016
  • In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

Piezoelectric Properties of Ag2O-doped 0.98(Na0.5K0.5)NbO3-0.02Li(Sb0.17Ta0.83)O3 Ceramics (Ag2O 첨가에 따른 0.98(Na0.5K0.5)NbO3-0.02Li(Sb0.17Ta0.83)O3 세라믹스의 압전특성)

  • Kim, Hyun-Ju;Lee, Seung-Hwan;Lee, Sung-Gap;Lee, Young-Hie
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.29-32
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    • 2012
  • Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

A STUDY ON THE COMPLETE RETRIEVAL SYSTEM OF THE CEMENTATION TYPE IMPLANT ABUTMENT (손상 없이 영구 접착 보철물을 제거할 수 있는 cementation type 임플랜트 지대주 개발에 관한 연구)

  • Choi Jin-Ho;Lee Jai-Bong
    • The Journal of Korean Academy of Prosthodontics
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    • v.42 no.5
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    • pp.597-607
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    • 2004
  • Purpose: This study was peformed to investigate the retrievability of the cemented crown from the cementation type implant abutment. Material and method: The cementation type implant abutments (NEOBIOTECH implant abutment regular, 3 degree taper, 10mm length, 4mm diameter, Ti grade III, machined surface. Hwasung, Kyunggi-do) and cemented crowns were divided into 3 groups, depending on their hole angles formed in the crowns for their retrievability. The abutments and crowns were luted with 4 kinds of cements and separation test using metal wedge was executed with Instron 4465 Universal Testing Machine and the maximum impact force of the modified crown ejector was measured. Results and conclusion : 1. All of the cementation type implant abutments and cemented crowns were separated with relatively small force by metal wedge. 2. The retrieving force was minimum when the metal wedge was applied perpendicular to the axis of abutment. 3. The force for retrieving crowns from abutments was maximum in resin cement group, and reduced in orders of zinc phosphate cement, glass ionomer cement and zinc oxide eugenol cement. 4. The maximum force obtained by the crown ejector was higher than the retrieval force in ZOE and GI cement and lower than that in ZPC and resin cement. 5. If it has similar conditions clinically, the cemented crowns luted with 2 types of cements (ZOE, GI cement) can be safely retrieved from the cementation type implant abutments by the modified crown ejector.

CO Gas Sensing Characteristics of Nanostructured ZnO Thin Films (산화아연 나노구조 박막의 일산화탄소 가스 감지 특성)

  • Hung, Nguyen Le;Kim, Hyo-Jin;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.20 no.5
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    • pp.235-240
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    • 2010
  • We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

Change in the photocatalytic activity of ZnO nanoparticles by additive H2O

  • Nam, Sang-Hun;Kim, Myoung-Hwa;Lee, Sang-Duck;Choi, Jin-Woo;Kim, Min-Hee;Boo, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.285-285
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    • 2010
  • Zinc oxide (ZnO) is a direct band gap semiconductor with 3.37 eV, which has in a hexagonal wurtzite structure. ZnO is a good candidate for a photocatalyst because it has physical and chemical stability, high oxidative properties, and absorbs of ultraviolet light. During ZnO is irradiated by UV light, redox (reduction and oxidation) reactions will occur on the ZnO surface, generating the radicals O2- and OH. These two powerful oxidizing agents have been proven to be effective in decomposition of harmful organic materials, converting them into CO2 and H2O. Therefore, we assume that oxygen on the surface of ZnO is a very important factor in the photocatalytic activities of ZnO nanoparticles. Recently, ZnO nanoparticles are studied in various application fields by many researchers. Photocatalyst research is progressing much in various application fields. But the ZnO nanoparticles have disadvantage that is unstable in water in comparison titanium dioxide (TiO2). The Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoaprticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their phtocatalytic activity changes. The characterization of ZnO nanoparticles were analyzed by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and BET test. Also we defined the photocatalytic activity of ZnO nanoparticles using UV-VIS Spectroscopy. And we explained changing of photocatalytic activity after the water treatment using X-ray Photoelectron Spectroscopy (XPS).

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