• Journal of the Korean Society of Safety
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• v.8 no.2
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• pp.3-9
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• 1993

For comparison, we used Ca and Mg as reducers to produce TiFe hydrogen stroage alloy from Fe and TiO$_2$by the Reduction-Diffusion process. The results obtained were as follow. \circled1 Ca was found to be effective both for reduction and diffusion processes. Moreover, Ca oxide was easily removed in an NH$_4$Cl solution after the reaction. \circled2 In the case of using Ca as a reducer, the Reduction-Diffusion process is considered to take place in the foiling three steps. First, TiO$_2$is reduced to Ti by Ca over 100$0^{\circ}C$. Second, the atomic Ti drifts in the Ca melt and meets Fe particles. Finally, the atomic Ti diffuses in to the Fe particles. \circled3 In the case of using Mg as a reducer, We found that the reduction reaction of TiO$_2$went well. But the reduced Ti scarcely diffused into Fe particles. This was probably because no Mg melt was formed due to the high vapor pressure of Mg.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.196-200
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• 1998

Effect of diffusion induced recrystallization(DIR) on mechanical properties of hot-pressed TiC was in-vestigated. The TiC specimen was electroplated with Cr and then heat-treated at 1550. Through the DIR process a new set of (Ti, Cr) C mixed carbide grains with uniform and small size was formed at the surface. As a consequence the scattering in fracture strength decreased and the toughness increased.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.484-490
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• 1987

Diffusion coupling experiment was done to study expansion of body and soild reaction in BaCO3-TiO2 system. Specimen of BaCO3 and TiO2 was formed with Pt-mark's method. Each specimen was fired at interval of 25℃ from 900℃ to 1000℃ for 2hrs. After that, specimen was fixed with resin and polished. Product layers of specimen were observed with SEM and EDS. The result were following; 1. Diffusion component is Ba2+, which diffuse toward TiO2. 2. Large crack between layer of BaCO3 and Ba2TiO4 was generated because of difference of thermal expansion coefficient. 3. Ba2TiO4 is formed to TiO2 body by the reaction of BaTiO3 and BaO and its structure is very porous. 4. BaTiO3 changes immediately to Ba2TiO4 by the reaction of BaO. But BaTiO3 which formed by the reaction of TiO2 and Ba2TiO4 exsists as layer because the diffusion distance of Ba2+ is far.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• Journal of Powder Materials
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• v.25 no.2
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• pp.109-119
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• 2018

The objective of this study is to reveal the sintering mechanism of mixed Ti-6Al-4V powders considering the densification and the homogenization between Ti and Al/V particles. It is found that the addition of master alloy particles into Ti enhances densification by the migration of Al into the Ti matrix prior to the self-diffusion of Ti. However, as Ti particles become coarser, sintering of the powders appears to be retarded due to slower inter-diffusion of the particles due to the reduced surface energies of Ti. Such phenomena are confirmed by a series of dilatometry tests and microstructural analyses in respect to the sintering temperature. Furthermore, the results are also consistent with the predicted activation energies for sintering. The energies are found to have decreased from 299.35 to $135.48kJ{\cdot}mol^{-1}$ by adding the Al/V particles because the activation energy for the diffusion of Al in ${\alpha}-Ti$ ($77kJ{\cdot}mol^{-1}$) is much lower than that of the self-diffusion of ${\alpha}-Ti$. The coarser Ti powders increase the energies from 135.48 to $181.16kJ{\cdot}mol^{-1}$ because the specific surface areas of Ti decrease.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Journal of Industrial Technology
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• v.22 no.B
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• pp.117-124
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• 2002

We prepared the nano-sized $TiO_2$ particles by the diffusion flame reactor and investigated the effects of several process variables on the generation and transport properties of $TiO_2$ particle. As the length from the tip of diffusion flame reactor increases, the size of $TiO_2$ particle increases by the coagulation between particles. The structure of $TiO_2$ particles prepared is almost found to be anatase. It was found that the $TiO_2$ particle size depends more largely on the change of reactor temperature than on the change of inlet $TiCl_4$ concentration. By the photo-degradation experiment of phenol and toluene with the prepared $TiO_2$ particles, we found that the photo-degradation efficiencies of phenol and toluene change, depending on the process variables such as size of $TiO_2$ photocatlysts, concentration of phenol or toluene. Degradation efficiencies of phenol and toluene was above 90% in our experiments in 60 minutes.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.223-227
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• 1996

The effect of ZrC and VC addition on the diffusion induced recrystallization (DIR) of TiC-Cr3C2 has been investigated. With in creasing the amount of added ZrC to Cr3C2 the DIR of TiC was suppressed at the begining and then occurred. On the contrary the DIR was accelerated with the addition of VC to Cr3C2 Because the lattice parameters of (Ti, Cr)C and (Ti,V)C are smaller and that of (Ti, Zr)C is larger than that of TiC the lattice parameter of (Ti,Cr,Zr)C is expected to be similar to that of TiC,. The results indicate that the strain energy due to lattice mismatch between TiC and solid-solution carbide is the driving force of the observed energy due to lattice mismatch between TiC and solid-solution carbide is the driving force of the observed DIR.