• Bulletin of the Korean Chemical Society
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• v.32 no.11
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• pp.3991-3995
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• 2011

$TiO_2-SiO_2-In_2O_3$ nanocomposite thin film was deposited on the glass substrates using a dip coating technique. The morphology, surface composition, surface hydroxyl groups, photocatalytic activity and hydrophilic properties of the thin film were investigated by AFM, XPS, methyl orange decoloring rate and water contact angle measurements. The hydroxyl content for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ nanocomposite films was calculated to be 11.6, 17.1 and 20.7%, respectively. $TiO_2-SiO_2-In_2O_3$ film turned superhydrophilic after 180-min irradiation with respect to pure $TiO_2$ and $TiO_2-SiO_2$ thin films. The photocatalytic decomposition of methyl orange for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ thin films was measured as 38.19, 58.71 and 68.02%, respectively. The results indicated that $SiO_2$ and $In_2O_3$ had a significant effect on the hydrophilic, photocatalytic and self-cleaning properties of $TiO_2$ thin film.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.119-126
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• 2001

Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion(i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.582-588
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• 2002

IrO$_2$-RuO$_2$ films were deposited on plasma sprayed TiO$_2$ buffer layer above Ti metal by sol-gel and dip-coating method. Organic vehicle (ethyl cellulose and $\alpha$-terpineol) and glass frit were added to improve adherence of the coatings. Taguchi method and L$_{18}$ (2$^1$$\times$3$^{7}$ ) orthogonal arrays were evalvated in terms of current density to determine the optimal combination of levels of factors that best satisfy the bigger is better quality characteristic. The observed conditions were as fellows: ethyl cellulose (100 cp), drying temperature and time (17$0^{\circ}C$,20 min), heat treatment temperature and time (75$0^{\circ}C$,10 min), the weight ratio of IrO$_2$-RuO/powders to glass frit (99:5), final heat treatment time (120 min) and flow rate of air (5 sccm), respectively. ANOVA analysis suggested that the influence of the factors within $\alpha$= 0.1 was significant with a 90% confidence level.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.6
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• pp.314-318
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• 2022

Transparent conducting ZnO/Ti/ZnO tri-layer films deposited on glass substrate with DC and RF magnetron sputtering were rapid thermal annealed at 150, 300 and 450℃ for 5 minutes and then effect of annealing temperature on the structural and optoelectronics properties of the films were investigated. The structural properties are strongly related to annealing temperature and the largest grain size is observed in the films annealed at 450℃. The electrical resistivity also decreases as low as 7.7 × 10^-4 Ωcm. The visible transmittance also depends on the annealing temperature. The films annealed at 450℃ show a higher transmittance of 80.6% in this study.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.1
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• pp.39-44
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• 2020

BaTiO₃ thin films was deposited on the slide glass by RF sputter. We have investigated the optical properties of BaTiO₃ film after corona poling process. The transmission characteristics was very good over 80% in visible region and second order nonlinear optical coefficient depends on the poling conditions. The nonlinear optical coefficient of poled BaTiO₃ films was about 1.15pm/V. The relaxation of second order nonlinear optical was remained around 60% of the initial value for a long time. In addition we have observed the green light generation from BaTiO₃ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.165-168
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• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.660-664
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• 2008

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness, chemical stability, low friction and good adhesion properties. In this study, we investigated the effect of DC power on the characteristics of TiN thin films deposited on Si and glass substrates by DC magnetron sputtering using TiN target. We made TiN films of 300 nm thickness with various DC powers. The structural properties of films are investigated by x-ray diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester. The rms roughness was measured by atomic forced microscopy (AFM). In the result, TiN films had the smooth surface and exhibited (111) directions with the increase of DC Power. Also, especially in case of 175 W DC power, TiN film exhibited the maximum hardness about 8 GPa, and the critical load near 25.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.296-299
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• 2015

$In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.