• 전자공학회논문지A
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• 제31A권8호
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• 한국표면공학회지
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• 제55권6호
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.118-118
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• 2009

Low temperature co-fired ceramic (LTCC) is one of promising materials for MEMS structures because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of 400 um were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of $Pb(ZrTi)O_3$ (PZT) thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The results showed that the fabrication method is very suitable for pressure sensor applications. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.99-100
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• 2005

We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.

• 한국표면공학회지
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• 제40권1호
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• pp.6-10
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• 2007

For low-emissivity application on window glass, coalescence of thin film silver islands is crucial for high transmittance in the visible and high reflectance in the infrared. It is well known that the underlayer affects the growth mode. In this work, the effect of the underlayer on the growth of silver films deposited by filtered cathodic vacuum arc is discussed. While a nominal 0.1 nm niobium underlayer has promoted the coalescence of silver islands, a 0.2 nm layer did not show these features. From a thermodynamic approach, Nb seeding less one monolayer is considered to reduce the surface energy between the silver atoms and $Nb/TiO_2$ surface, resulting the change of its growth from 3D islands to 2D-layer modes. If the seed layer exceeds one monolayer, however, a rougher surface is formed because the surface energy of Nb itself is superior to that of $Nb-TiO_2$. The onset of silver layer on the roughened Nb surface is required more silver.

• 한국표면공학회지
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• 제41권6호
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• pp.301-307
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• 2008

In this paper, nanocrystallization of CuNiTiZr bulk metallic glass (BMG) subjecting to a kinetic spraying, dependent on impact velocity, was investigated by numerical and experimental approaches. The crystallization fraction and nucleation activation energy of initial feedstock and as-deposited coating were estimated by DSC and Kissinger method, respectively. The results of numerical modeling and experiment showed that the crystalline fraction and nucleation activation energy in BMG coatings were depended on kinetic energy of incident particle. Upon impact, the conversion of particle kinetic energy leads to not only decreasing free energy barrier but also increasing the driving force for an amorphous to crystalline phase transformation. The nanocrystallization of BMGs is associated with the strain energy delivered by a plastic deformation with a high strain rate.

• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국산학기술학회논문지
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• 제14권4호
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• pp.2037-2042
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• 2013

기존 DSSC의 상대전극을 TCO-less로 하여 도전성과 촉매기능을 동시에 가지고 있는 Pd의 안정성 확인을 위해 열증착기를 채용하여 유리기판 전면에 Pd를 90nm 두께로 증착하고 전해질과의 반응 안정성을 확인하였다. $0.45cm^2$급 면적을 가진 glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass 구조의 DSSC 소자를 만들고, 시편제작 1시간, 12시간 후의 변화를 육안분석, 광학현미경과 FESEM을 이용하여 미세구조 분석을 진행하고, 전기적 분석은 각각 C-V(cyclic voltammetry measurements), I-V(current voltage) 분석을 통해 확인하였다. 미세구조 분석을 통하여 시간이 지남에 따라 확연히 Pd과 전해질이 반응하여 부식되는 것을 확인하였고, 전기적으로도 시간이 지남에 따라 촉매활동도와 효율이 감소하는 것을 확인하였다. 최종 효율은 1시간 후에는 0.34%의 광전효율을 보였으나 12시간 후에는 0.15%를 나타내어 약 44%로 감소하였다. 따라서 염료감응태양전지에 Pd촉매를 채용하기 위해 $I^-/I_3{^-}$ 전해질이 아닌 다른 전해질을 사용하거나 Pd 전극이 아닌 다른 촉매재를 사용해야 함을 확인하였다.

• 한국세라믹학회지
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• 제27권2호
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• pp.288-296
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• 1990

Parent glasses for the experiments were prepared to be ratio of Li2O : Al2O3 : SiO2=4.5 : 25 : 70.5 as basic components, and TiO2 and ZrO2 in the mixing ratio of 1 : 1 were added as the nucleating agents, whose contents were increased in each sample. DTA, XRD, SEM, IR were observed, and thermal expansion and transmissivities were measured for the crystallized samples under the controlled heat-treatments. The transformation temperatures and the dilatometric softening temperatures in thermal expansion curves, and also the exothermic peaks in differential thermo-analytical curves were shifted to lower temperature. The crystal phase deposited through the heat-treatment was identified as ${\beta}$-quartz solid solution with XRD and IR analysis. The crystalline phases in oopactified samples were ${\beta}$-spodumene coexiting with ${\beta}$-quartz solid solution. The samples having more than 3% nucleating agents were transparent. The crystallized grain sizes were ranged 0.05 to 0.1$\mu\textrm{m}$. The crystallized transparent samples were exceeded 85% in the transmissivity.