• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.213-213
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• 2011

Gold catalysts supported on TiO2 have shown a unique catalytic behavior on CO oxidation, depending on surface effects. Particle size has an influence on the surface activity. To make monodisperse Au nanoparticles, organic capping ligands, such as alkylthiols, were used by a "greener" synthesis method [1,2] and Au nanoparticles were deposited on TiO2. However, organic capping ligands must be removed for high catalytic activities by the Au nanoparticles without changing the Au size [3]. We used UV ozone treatment to decompose thiol ligands. The samples have been characterized by X-ray photoelectron spectroscopy to examine the surface modification by UV ozone treatment. We show the size distribution of the gold nanoparticles by light scattering analysis and transmission electron microscopy. Au/TiO2 have been prepared using the wetness impregnation method. The catalytic performance of CO oxidation over Au supported on TiO2 under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) were tested. The results show that the catalytic activity depends on particle size and the time of UV ozone exposure, which suggests the role of sulfur bonding in determining the catalytic activity of Au/TiO2 catalysts.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.280-285
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• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.237-240
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• 2002

In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• 한국산학기술학회논문지
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• 제6권3호
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• pp.270-272
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• 2005

코발트 실리사이드는 낮은 전기 저항성 때문에 고효율 소자를 제조하는데 적합한 물질이다. 이는 전자소재가 소형화되면서 접촉저항과 혼합을 줄이기 위해 더욱 필요하게 되었다. 본 연구에서는 티타늄의 표면산화에 미치는 영향과, RTO 조건에서 온도에 따른 코발트 실리사이드 박막의 산화정도를 측정했다. 기질로서 p-형 실리콘웨이퍼를 사용하였고, 고속 열 가공을 통하여 박막을 가공하였다. 티타늄 층을 입혔을 때 산화충의 두께는 $500{\AA}$정도 성장하였다. 고속 열산화의 온도변화에 따라 산화막은 $550^{\circ}C\~700^{\circ}C$까지는 성장을 보였으나 $700^{\circ}C$이상에는 산화막 성장이 포화상태를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.15-16
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• 2006

The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at $500^{\circ}C$ for 30 sec. It was found that the thermal stability of nickel silicide depends on the stress induced by the nitride capping layer. In the case of Ni (10 nm) structure, the high compressive sample shows the best thermal stability, whereas in the case of Ni/Co/TiN (7/3/25 nm) structure, the high compressive sample shows the worst thermal stability.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국재료학회지
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• 제16권10호
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.219-223
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• 2015

Enhancement of the surface hydrophobicity of polydimethylsiloxane (PDMS) thin films deposited on substrates covered with titanium dioxide ($TiO_2$) nanospheres was studied. First, a low-temperature solution-phase method using polyvinylpyrrolidone (PVP) as a surface capping agent and a water/dimethylformamide (DMF) mixture as the reaction medium was used to synthesize monodisperse $TiO_2$ nanospheres. It was possible to easily control hydrolysis rate of the Ti-precursors and the size of the synthesized nanospheres by varying the amount of PVP and the volume ratio of the solvent mixture. Spray coating of the synthesized $TiO_2$ nanospheres under the PDMS film increased the water contact angle of the film surface to $150.3^{\circ}$. This simple treatment can modify the surface morphology at a nanometer scale without any long or complicated nanoprocess; hence, the surface enters the superhydrophobic Cassie-Baxter regime.