• Journal of Applied Reliability
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• v.17 no.3
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• pp.246-255
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• 2017

Purpose: This study proposes the optimal PM (preventive maintenance) policy of leased equipment for lessee's decision-making using two types of reliability condition. Methods: We consider reliability threshold based PM model. Equipment reliability is estimated and used as condition variable. The effect of repair for maintenance is imperfect and represented by age reduction factor. Results: We provide two PM policies. Policy 1 is focused on minimized total cost. This policy guarantees reliability threshold until last maintenance action. Policy 2 focus on maintaining reliability threshold during leased period. The proposed approach provides optimal reliability threshold under number of PM. Through result, we finally construct decision-making process for lessee using reliability threshold and end of reliability. Conclusion: This study provides two PM policy for lessee's decision-making. Through numerical example, we get a result of optimal reliability threshold, number of PM, optimum alternative under lessee's reliability condition.

• Journal of Industrial Technology
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• v.30 no.B
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• pp.17-23
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• 2010

Since the propagation of a short fatigue crack is directly related to the large crack which causes the fracture of bulk specimen, the detailed study on the propagation of the short crack is essential to prevent the fatigue fracture. However, a number of recent studies have demonstrated that the short crack can grow at a low applied stress level which are predicted from the threshold condition of large crack. In present study, the threshold condition for the propagation of short fatigue crack is examined with respect to the micro-structure and cyclic loading history. Specimens employed in this study were decarburized eutectoid steels which have various decarburized ferrite volume fraction. Rotating bending fatigue test was carried out on these specimens with the special emphasis on the "critical non-propagating crack length" It is found that the reduction of the endurance limit of their particular micro-structures can be due to the increase of the length of critical non-propagating crack, and the quantitative relationship between the threshold stress ${\sigma}_{wo}$ and the critical non-propagating crack length $L_c$ can be written as ${\sigma}_{wo}{^m}{\cdot}L_c=C$ where m,C is constant. Further experiments were carried out on cyclic loading history on the length of critical non-propagating crack. It shown that the length of critical non-propagating crack is closely related to cyclic loading history.

• 전기의세계
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• v.23 no.4
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• pp.53-59
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• 1974

This paper investigates the theoretical properties of a logic element called the multithreshold threshold element, which is a generalization of the single-threshold threshold element. The primary partition os a systematic method of obtaining the multi-threshold realization of a switching function by the index numbers. The concept of comparable vertices of the same index numbers introduced in this paper is very promising for testing the multi-threshold partition by the initial condition to be defined by the minterms of the same index numbers.

• Journal of Biomedical Engineering Research
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• v.30 no.6
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• pp.516-520
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• 2009

The purpose of this study is to determine optimal filtering condition and threshold for the detection of gait-cycles for various walkway slopes as well as gait velocities. Ten young healthy subjects with accelerometer system on thigh and ankle walked on a treadmill at 9 conditions (three speeds and three slopes) for 5 minutes. Two direction signals, i.e. anterior-posterior (AP) and superior-inferior (SI) directions, of each sensor (four sensor orientations) were used to detect specific events of gait cycle. Variation of the threshold (from -1G to 1G) and lowpass cutoff frequency (fc) were applied to the event detection and their performance was evaluated according to the error index (EI), which was defined as the combination of the accuracy and false positive rate. Optimal fc and threshold were determined for each slope in terms of the EI. The optimal fc, threshold and their corresponding EI depended much on the walkway slope so that their coefficients of variation (CV) ranged 19~120%. When all data for 3 slopes were used in the identification of optimal conditions for each sensor, the best error indices for all sensor orientations were comparable ranging 1.43~1.76%, but the optimal fc and threshold depended much on the sensor position. The result indicates that the gait-cycle detection robust to walkway slope is possible by threshold method with well-defined filtering condition and threshold.

• Communications for Statistical Applications and Methods
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• v.14 no.1
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• pp.141-146
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• 2007

In this paper, we consider a Box-Cox transformed threshold GARCH(1,1) process and find a sufficient condition under which the process is geometrically ergodic and has the ${\beta}$-mixing property with an exponential decay rate.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of Powder Materials
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• v.5 no.2
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• pp.122-128
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• 1998

NiAl based ODS (Oxide Dispersion Strengthened) intermetallic alloys have been produced by mechanical alloying (MA) process and consolidated by hot extrusion. Subsequent thermomechanical treatments have been applied to induce secondary recrystallization in an attempt to improve creep resistance in this material. The creep behavior of secondary recrystallized MA NiAl has been investigated and compared with those of as-extruded condition. Minimum creep rate were shown to be approximately two orders of magnitude lower than that in as-extruded condition. The improvement in creep resistance is believed due to the grain coarsening, restricting of dispersoid coarsening as well as increase in grain aspect ratio. Creep threshold stress behavior, below which no measurable creep rate can be detected, has been discussed on the basis of particle-dislocation interaction theory. The threshold stress becomes negligible after secondary recrystallization in MA NiAl, presumably due to dispersoid coarsening and a decrease in grain boundary area during secondary recrystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.517-520
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• 2008

A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.3
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• pp.505-512
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• 1988

Since the propagation of a short fatigue crack is directly related to the large crack which causes the fracture of bulk specimen, the detailed study on the propagation of the short crack is essential to prevent the fatigue fracture. However, a number of recent studies have demonstrated that the short crack can grow at a low applied stress level which are predicted from the threshold condition of large crack. In present study, the threshold condition for the propagation of short fatigue crack is examined with respect to the microstructure and cyclic loading history. Specimens employed in this study were decarburized eutectoid steels which have various decarburized ferrite volume fraction. Rotating bending fatigue test was carried out on these specimens with the special emphasis on the '||'&'||'quot;critical non-propagating crack length.'||'&'||'quot; It is found that the reduction of the endurance limit of their particular microstructures can be due to the increase of the length of critical non-propagating crack, and the quantitative relationship between the threshold stress .DELTA. .sigma. $_{th}$ and the critical non-propagating crack length Lc can be written as .DELTA. .sigma. $_{th}$, Lc=C where m, C is constant. Further experiments were carried out on the effect of pearlitic structure and cyclic loading history on the length of critical non-propagating crack. It is shown that the length of critical non-propagating crack is closely related to both pearlite interlamellar spacing and cyclic loading history.ory. cyclic loading history.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.