• Title/Summary/Keyword: Threshold concentration

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Threshold Voltage Modeling of Double-Gate MOSFETs by Considering Barrier Lowering

  • Choi, Byung-Kil;Park, Ki-Heung;Han, Kyoung-Rok;Kim, Young-Min;Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.2
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    • pp.76-81
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    • 2007
  • Threshold voltage ($V_{th}$) modeling of doublegate (DG) MOSFETs was performed, for the first time, by considering barrier lowering in the short channel devices. As the gate length of DG MOSFETs scales down, the overlapped charge-sharing length ($x_h$) in the channel which is related to the barrier lowering becomes very important. A fitting parameter ${\delta}_w$ was introduced semi-empirically with the fin body width and body doping concentration for higher accuracy. The $V_{th}$ model predicted well the $V_{th}$ behavior with fin body thickness, body doping concentration, and gate length. Our compact model makes an accurate $V_{th}$ prediction of DG devices with the gate length up to 20-nm.

Analytical Threshold Voltage Model of Ion-Implanted MOSFET (이온 주입된 Mosfet의 문턱 전압의 해석적 모델)

  • Lee, Hyo-Sik;Jin, Ju-Hyeon;Gyeong, Jong-Min
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.58-62
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    • 1985
  • Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

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Gustatory evoked potential induced by stimulation of solution in human

  • Min, Byung-Chan;Park, Se-Jin;Sakamoto, Kazuyoshi
    • Proceedings of the ESK Conference
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    • 1997.04a
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    • pp.17-25
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    • 1997
  • The evoked potentials for concentrations of solutions of the four qualities of tastes(i.e., sweet, salty, sour, and bitter tastes) were measured. The solution was applied to the chorda tympani nerve located on the left side of the tongue at 20mm from the tip and 15mm left from the center line. The evoked potentials were detected from Cz referred to A1(left lobe) with the ground at the Fpz position. The Maximum potential level and its latency were evaluated. The individual threshold level of concentration of the solutions of four tastes were measured. Artificial saliva was used as a control solution. The evoked positive potentials for four qualities of tastes (i.e., gustatory evokde potentials) were found to be around 150ms by averaging eight responses. The arbitrary concentration of the solutions were presented by the relative concentration, which was the ratio of the arbitrary concentration to the individual threshold level. The characteristic relations between the latency and the relative concentration ;and those between the potential level and the relative concentration were evaluated. These evalutions showed that (1) the latencies for salty and bitter tastes denoted the minimum values due to for the change of relative concentration, and that (2) the latency for sour taste decreased as the relative concentrations increased, while the latency for sweet taste denoted the inverse tendency, Sinificant differences between any two maximum potential levels were not recognized. A response latencies to sucrose were abolished after treatment of tongue by a sweet-suppressing agent.

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A Study on the Effect of Improvement in Work Environment and of Segregation in a Fluorescent Lamp Manufacturing Factory (모 수은취급사업장의 작업환경 개선 및 근로자 작업전환 효과에 관한 연구)

  • Chang, Soung-Hoon;Kim, Kwang-Jong
    • Journal of Preventive Medicine and Public Health
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    • v.22 no.4 s.28
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    • pp.474-479
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    • 1989
  • This research was conducted to evaluate the effect of improvement in work environment and of segregation in a fluorescent lamp manufacturing factory. Among the total of 80 workers, 8 workers whose mercury concentration in urine reached a hazardous level ($200-299{\mu}g/l$) were moved to mercury free workplace. The follow-up examination for their mercury concentration in urine was done three times ; on May 3, 1988, September 1, 1988 and April 3, 1989. The results were as follows : 1. Mercury concentration in the air was reduced from 0.140 to 0.107 $mg/m^3$ in 4 months, and to $0.087mg/m^3$ in one year after environmental improvement in workplace. However the level still exceeded the Threshold Limit Value. 2. The geometric mean of urinary mercury concentration among 80 workers was $173.0{\mu}g/l\;(5.1{\sim}458.6{\mu}g/l$). The distribution of workers according to urinary mercury concentration showed that 9 workers (11.2%) were above the mercury poisoning level ($300{\mu}g/l$), 24 workers (30.0%) were $200-299{\mu}g/l$, 35 workers (43.8%) were $50-199{\mu}g/l$, and 12 workers (15.0%) were below 50 ${\mu}g/l$. 3. Among the 24 workers whose urinary mercury concentration was 200-299 $50-199{\mu}g/l$, 8 were able to be followed up. Their mean urinary mercury concentration before segregation was $244.9{\mu}g/l$, but decreased to $151.4{\mu}g/l$ in four months, $128.8{\mu}g/l$ in six months, and $46.8{\mu}g/l$ in one year after segregation.

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Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

  • Joseph, Saji;George, James T.;Mathew, Vincent
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.240-250
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    • 2010
  • Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

Threshold Voltage Shift for Doping Profile of Asymmetric Double Gate MOSFET (도핑분포함수에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동현상)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.4
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    • pp.903-908
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    • 2015
  • This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

Analysis of Relation between Conduction Path and Threshold Voltages of Double Gate MOSFET (이중게이트 MOSFET의 전도중심과 문턱전압의 관계 분석)

  • Jung, Hakkee;Han, Jihyung;Lee, Jongin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.818-821
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    • 2012
  • This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

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Deviation of Threshold Voltages for Conduction Path of Double Gate MOSFET (이중게이트 MOSFET의 전도중심에 따른 문턱전압의 변화)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.11
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    • pp.2511-2516
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    • 2012
  • This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

Carbon nanotube-doped liquid crystal cells

  • Huang, Chi-Yen;Pan, Hung-Chi;Hsieh, Chia-Ting
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.426-429
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    • 2006
  • We investigated the electrooptical properties of a carbon nanotube (CNT)-doped nematic liquid crystal (LC) cell. Experimental results reveal that the doped CNTs influence the elastic constant of LC-CNT dispersion. Using a small amount of CNT dopant, the rise time of the LC cell is nearly invariant; the threshold voltage of the cell increases due to the increase in the elastic constant of LC-CNT dispersion. At a higher CNT concentration, the marked increase in the dielectric anisotropy of LC-CNT dispersion markedly decreases the rise time and threshold voltage of the LC cell. The fall time of this cell decreases with increasing CNT concentration due to the increase in elastic constant and the slight increase in viscosity of LC-CNT dispersion. The rise time and the fall time of the LC cell are decreased simultaneously when the LC host is doped with a moderate amount of CNT dopant.

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Effect of Age-related Changes in Taste Perception on Dietary Intake in Korean Elderly (노인의 영양상태에 미각변화가 미치는 영향)

  • 김화영
    • Journal of Nutrition and Health
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    • v.30 no.8
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    • pp.995-1008
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    • 1997
  • This study was performed to investigate the change in taste perception during aging and its effects on dietary intake in Korean elderly. The subjects were female aged 65 through 90 in the Anyang area, and college women were included as a comparison group . Dietary intake of the elderly(n=155) and young subjects (n=38) was measured by a 3 day diet record. The taste threshold and 'just right' concentrations(JRC) for sweet and salty tastes were assessed by sensory evaluation . Sucrose solution (0.0.,0.4,0.6,0.8,1.0, 1.2%) and salt solution(0, 0.02, 0.03,0.06,0.09,0.12,0.15%) were used to establish thresholds. for JRC assessment, four suprathreshold sucrose concentrations of 5, 8, 11 and 14% in orange-pineapple flavored juice and salt concentrations of 0.20, 0.34, 0.50and 0.75% in beef stock were prepared. Mean intakes of energy, protein , vitamin A, thiamin , riboflavin, niacin ,calcium and iron of the elderly were below the Korean Recommended Dietary allowances. The elderly showed higher taste thresholds than young subjects of both sweet and salty tastes consumed less calories. Needs to bespecified. The older subjects having high threshold or JRCs for sweet and salty tastes consumed fewer calories from protein and fat. Pearson correlation coefficients was between JRC for sweet and salty tastes 0.54(p<0.01). The correlation coefficients between tastes threshold and nutrient intakes were very low for both age groups. Unlike the college women, in the elderly the JRC of sweet taste of the orange-pineapple juice were negatively correlated with intakes of energy, protein, fats, thiamin , riboflavin , niacin ,vitamin C , iron and consumption of meat and egg food groups (p<0.01). In summation age-related alterations in sweet and salty taste perception were observed in the elderly and dietary intakes of the elderly see to be influenced by these taste perception changes.

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