• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.2
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• pp.278-285
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• 1988

The Critical size of artificially induced micro-holes in 0.17%, 0.36% Carbon steel Specimens with Spheroidized Cementite and in 0.17% carbon steel specimens with martensite structure is compared with annealed pre-crack in order to discuss the physical meaning of the fatigue limit and evaluation of the tolerant micro flaw size at the stress level of the fatigue limit. Results obtained were summarized as follows; (1) In this study, non-propagating crack length of Smooth specimen and critical pre-crack length (lc) is coincide. (2) In the carbon steels with spheroidized cementite structure, critical pre-crack length (lc) and allowable micro-hole size (dc) is coincide each other at the fatigue limit level. (3) It has been published that there exists a particular size of micro-hole which has no effect on the fatigue limit. In this study, the micro-hole of critical size can be regarded as equivalent to a tolerant micro flaw which would not reduce the fatigue limit.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• BMB Reports
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• v.47 no.9
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• pp.475-482
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• 2014

Ubiquitin (Ub) is a versatile signaling molecule that plays important roles in a variety of cellular processes. Cellular Ub pools, which are composed of free Ub and Ub conjugates, are in dynamic equilibrium inside cells. In particular, increasing evidence suggests that Ub homeostasis, or the maintenance of free Ub above certain threshold levels, is important for cellular function and survival under normal or stress conditions. Accurate determination of various Ub species, including levels of free Ub and specific Ub chain linkages, have become possible in biological specimens as a result of the introduction of the proteomic approach using mass spectrometry. This technology has facilitated research on dynamic properties of cellular Ub pools and has provided tools for in-depth investigation of Ub homeostasis. In this review, we have also discussed the consequences of the disruption of Ub pool dynamics and homeostasis via deletion of polyubiquitin genes or mutations of deubiquitinating enzymes. The common consequence was a reduced availability of free Ub and a significant impact on the function and viability of cells. These observations further indicate that the levels of free Ub are important determinants for cellular protection.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1225_1226
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• 2009

유리 기판 상에 이중 게이트 절연막을 가지는 우수한 특성의 P형 엑시머 레이저 어닐링 (ELA) 다결정 실리콘 박막 트랜지스터를 제작하였다. 그리고 P형 짧은 채널 ELA 다결정 실리콘 박막 트랜지스터의 오프 상태 스트레스 하에서의 전기적 특성을 분석하였다. 스트레스하에서 긴 채널에서의 문턱 전압은 양의 방향으로 거의 이동하지 않는 (${\Delta}V_{TH}$ = 0.116V) 반면, 짧은 채널 박막 트랜지스터의 문턱 전압은 양의 방향으로 상당히 이동 (${\Delta}V_{TH}$ = 2.718V)하는 것을 확인할 수 있었다. 이런 짧은 채널 박막 트랜지스터에서 문턱 전압의 양의 이동은 다결정 실리콘 막과 게이트 산화막 사이의 계면에서의 전자 트랩핑 때문이다. 또한, 박막 트랜지스터의 누설 전류는 오프 상태 스트레스 하에서의 채널 영역의 홀 전하로 인하여 온 전류 수준을 감소시키지 않고 억제될 수 있었다. C-V 측정 결과는 계면의 전자 트랩핑이 드레인 접합 영역부근에서 발생한다는 것을 나타낸다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1270_1271
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• 2009

In this research, gallium-incorporated zinc oxide (ZnO:Ga) thin films have been used as a coating material for enhancing the field-emission property of CNT-emitters. Multi-walled CNTs were directly grown on conical-type ($250{\mu}m$ in diameter) metal-tip substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The pulsed laser deposition (PLD) technique was used to produce 5wt% gallium-doped ZnO (5GZO) films with very low stress. The structural properties of ZnO and 5GZO coated CNTs were characterized by Raman spectroscopy. Field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) were also used to monitor the variation in the morphology and microstructure of CNTs before and after 5GZO-coating. The measurement of the field emission characteristics showed that the emitter that coated the 5GZO (10nm) on CNTs exhibited the best performance: a maximum emission current of $325{\mu}A$, a threshold field of 2.2 V/${\mu}m$.

• Advances in nano research
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• v.3 no.3
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• pp.143-168
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• 2015

Initiation of crack and its growth simulation requires accurate model of traction - separation law. Accurate modeling of traction-separation law remains always a great challenge. Atomistic simulations based prediction has great potential in arriving at accurate traction-separation law. The present paper is aimed at establishing a method to address the above problem. A method for traction-separation law prediction via utilizing atomistic simulations data has been proposed. In this direction, firstly, a simpler approach of common neighbor analysis (CNA) for the prediction of crack growth has been proposed and results have been compared with previously used approach of threshold potential energy. Next, a scheme for prediction of crack speed has been demonstrated based on the stable crack growth criteria. Also, an algorithm has been proposed that utilizes a variable relaxation time period for the computation of crack growth, accurate stress behavior, and traction-separation atomistic law. An understanding has been established for the generation of smoother traction-separation law (including the effect of free surface) from a huge amount of raw atomistic data. A new curve fit has also been proposed for predicting traction-separation data generated from the molecular dynamics simulations. The proposed traction-separation law has also been compared with the polynomial and exponential model used earlier for the prediction of traction-separation law for the bulk materials.

• Journal of the Korean Society of Safety
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• v.22 no.2 s.80
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• pp.15-21
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• 2007

Fine grained Al-5083 alloy produced by equal channel angular pressing (ECAP) at $120^{\circ}C$ was tested for investigating mechanical properties and crack growth propagation behavior. Also, FEM stress and strain analysis for the samples during ECAP were investigated, using a plastic deformation analysis software DEFORM 2-D. Coarse grained as-received samples exhibited UTS of 255.6MPa with a elongation to failure of 34.4%. By contrast, the ECAPed fine grained samples exhibited UTS of 362.0MPa with a elongation to failure of 12.9%. Fatigue crack growth resistance and threshold of fine grained samples were lower than that of as-received coarse grained samples. The higher fatigue crack growth rate in the fine grained ECAPed samples may partially arise from small roughness closure effect due to smoother fracture surfaces.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.302-305
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• 1989

Ac, dc and impulse dielectric strengths of $LN_2$ at 0.1MPa were investigated experimentally, referring to the behavior of thermally induced bubble, which might be generated at quenching condition of immerged-cooling superconducting devices. The experimental results show that the bubble shape under electric field stress depends significantly on the applied voltage waveform. With ac voltage, the breakdown voltage of $LN_2$ falls suddenly near to one of the saturated gas at the threshold heater power of boiling onset. In control to this, the reduction of impulse breakdown voltage with heater peter is gradual and the time to breakdown depends on the existence of thermal bubble. These breakdown characteristics can be explained satisfactorily by the bubble behavior under electric fields.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.