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Establishment of an Analytical Method for Determination of Fungicide Oxathiapiprolin in Agricultural Commodities using HPLC-UV Detector (HPLC-UVD를 이용한 농산물 중 살균제 Oxathiapiprolin의 잔류분석법 확립)

  • Jang, Jin;Kim, Heejung;Do, Jung Ah;Ko, Ah-Young;Lee, Eun Hyang;Ju, Yunji;Kim, Eunju;Chang, Moon-Ik;Rhee, Gyu-Seek
    • Journal of Food Hygiene and Safety
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    • v.31 no.3
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    • pp.186-193
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    • 2016
  • An analytical method was developed for the determination of oxathiapiprolin in agricultural commodities. Oxathiapiprolin is a new oomycide (fungicide of piperidinyl thiazole isoxazoline class) which controls downy mildew in cucurbits caused by Pseudoperonospora cubensis (oomycete plant pathogen). Agricultural commodities were extracted with acetonitrile and partitioned with dichloromethane to remove the interference, adjusting pH between 9 and 10 by 1 N sodium hydroxide. After purification by silica SPE cartridge to clean up the interference of organic compounds, they were finally quantified by HPLC-UVD (high performance liquid chromatograph ultraviolet detector) using a wavelength at 260 nm and confirmed by LC-MS (liquid chromatograph mass spectrometer) in electro-spray ionization positive ion mode. The standard calibration curve was linear with coefficients of determination ($r^2$) 1.00 over the calibration ranges (0.025-2.5 mg/L). Recoveries were ranged between 86.7 to 112.7%, with relative standard deviations less than 10% at three concentration levels (LOQ, 10LOQ, and 50LOQ) performing five replicates. The overall results were determined and estimated according to the CODEX guidelines (CAC/GL40). The proposed method for determination of oxathiapiprolin residues in agricultural commodities can be used as an official method.

Improved Device Performance Due to AlxGa1-xAs Barrier in Sub-monolayer Quantum Dot Infrared Photodetector

  • Han, Im Sik;Byun, Young-Jin;Lee, Yong Seok;Noh, Sam Kyu;Kang, Sangwoo;Kim, Jong Su;Kim, Jun Oh;Krishna, Sanjay;Ku, Zahyun;Urbas, Augustine;Lee, Sang Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.298-298
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    • 2014
  • Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

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Reflectance and Microhardness Characteristics of Sulfide Minerals from the Sambong Copper Mine (삼봉동광산산(三峰銅鑛山産) 유화광물(硫化鑛物)의 반사도(反射度)와 미경도(微硬度) 특성(特性))

  • Chi, Se Jung
    • Economic and Environmental Geology
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    • v.17 no.2
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    • pp.115-139
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    • 1984
  • The Cu-Pb-Zn-Ag hydrothermal vein-type deposits which comprise the Sambong mine occur within calc-alkaline volcanics of the Cretaceous Gyeongsang Basin. The ore mineralization took place through three distinct stages of quartz (I and II stages) and calcite veins (III stage) which fill the pre-existing fault breccia zones. These stages were separated in time by tectonic fracturing and brecciation events. The reflection variations of one mineral depending on mineralization sequence are considered to be resulted from variation in its chemical composition due to different physico-chemical conditions in the hydrothermal system. The reflection power of sphalerite increases with the content of Fe substituted for Zn. Reflectances of the sphalerite grain are lower on (111) than on (100) surface. The spectral profiles depend on the internal reflection color. Sphalerite, showing green, yellow and reddish brown internal reflection, have the highest reflection power at $544m{\mu}$ (green), $593m{\mu}$ (yellow) and $615m{\mu}$ (red) wavelength, respectively. Chalcopyrite is recognized as biaxial negative from the reflectivity data of randomly oriented grains measured at the most sensitivity at $544m{\mu}$. The microindentation hardness against the Fe content (wt. %) for the sphalerite increases to 8.05% Fe and then decreases toward 9.5% Fe content. Vickers hardness of the sphalerite is considerably higher on surface of (100) than on (111). The relationship between Vickers hardness and crystal orientation of the galena was determined to be $VHN_{(111)}$ > $VHN_{(210)}$ > $VHN_{(100)}$. The softer sulfides have the wider variation of the diagonal length in the indentation. Diagonal length in the indentation is pyrite

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Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs (GaAs 기판 위에 성장한 In0.5Ga0.5As/In0.5Al0.5As 다중양자우물의 광학적 특성에 대한 In0.5Al0.5As 버퍼층 성장온도의 영향)

  • Kim, Hee-Yeon;Oh, H.J.;Ahn, S.W.;Ryu, Mee-Yi;Lim, J.Y.;Shin, S.H.;Kim, S.Y.;Song, J.D.
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.211-216
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    • 2010
  • The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

Fabric Dyeing with Lichen Parmotrema austrosinence and Improvement of Dyeability by Chitosan Treatment (Parmotrema austrosinence(지의류)를 이용한 직물염색과 키토산 처리에 의한 염색성 향상)

  • Yoo, Hye-Ja;Lee, Hye-Ja;Rhie, Jeon-Sook
    • Journal of the Korean Society of Clothing and Textiles
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    • v.32 no.6
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    • pp.882-889
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    • 2008
  • Three fabrics, 100% silk, nylon and cotton each, were dyed with a lichen dye solution prepared by a fermentation method under conditions of varying dyebath pH and temperature. To verify the effect of chitosan on fabric dyeing, the 100% cotton fabric was treated with a chitosan solution before dyeing. The K/S, CIE $L^*$, $a^*$, $b^*$, ${\Delta}E$ and Munsell values of the dyed samples were measured. Colorfastness of each sample was also investigated. The maximum K/S value was measured at 520nm wavelength for the dyed silk fabric and at 480nm for the dyed cotton and nylon. The K/S values for the dyed silk fabric were much greater than those of the other fabrics. The dyed silk fabric showed a red tone on the Munsell color system, and the dyed nylon and cotton fabrics a yellowish red tone. Dye affinity to fabrics was better in a neutral or acidic dyebath. As dyeing temperature increased, K/S values increased for the dyed nylon and cotton fabrics but not for the silk. Dyeability of cotton fabrics could improve by Chitosan treatment. As for most natural dyes, colorfastness of all dyed samples was poor. The silk fabric showed an excellent dry cleaning fastness of Grade 5.

Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures (InGaAs/InAlAs 양자우물구조의 발광특성에 대한 In0.4Al0.6As 버퍼층 성장온도의 영향)

  • Kim, Hee-Yeon;Ryu, Mee-Yi;Lim, J.Y.;Shin, S.H.;Kim, S.Y.;Song, J.D.
    • Journal of the Korean Vacuum Society
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    • v.20 no.6
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    • pp.449-455
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    • 2011
  • The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

Estimation of Nitrogen Uptake and Biomass of Rice (Oryza sativa L.) Using Ground-based Remote Sensing Techniques (지상 원격측정 센서를 활용한 벼의 생체량과 질소 흡수량 추정)

  • Gong, Hyo-Young;Kang, Seong-Soo;Hong, Soon-Dal
    • Korean Journal of Soil Science and Fertilizer
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    • v.44 no.5
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    • pp.779-787
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    • 2011
  • This study was conducted to evaluate the usefulness of ground-based remote sensing for the estimation of rice yield and application rate of N-fertilizer during growing season. Dongjin-1, Korean cultivar of rice was planted on May 30, 2006 and harvested on October 9, 2006. Chlorophyll content and LAI (leaf area index) were measured using Minolta SPAD-502 and AccuPAR model LP-80, respectively. Reflectance indices were determined with passive sensors using sunlight and four types of active sensors using modulated light, respectively. Reflectance indices and growth rate were measured three times from 29 days to 87 days after rice plating and at harvesting day. The result showed that values of growing characteristics and reflectance indices were highly correlated. Growing characteristics to show significant correlation with reflectance indices were in order of followings: fresh weight > N uptake > dry weight > height > No. of tiller > N content. Chlorophyll contents measured by chlorophyll meter (SPAD 502) showed high correlation with nitrogen concentration (r=$0.743^{**}$), although the correlation coefficients between remote sensing data and nitrogen concentration were higher. LAI was highly correlated with dry weight (r=$0.931^{**}$), but relationship between LAI and nitrogen concentration (r=$0.505^*$) was relatively low. The data of CC-passive sensor were negatively correlated with those of the near-infrared. NDVI correlation coefficients found more useful to identify the growth characteristics rather than data from single wavelength. Both passive sensor and active sensor were highly significantly correlated with growth characteristics. Consequently, quantifying the growth characteristics using reflectance indices of ground-based remote sensing could be a useful tool to determine the application rate of N fertilizer non-destructively and in real-time.

Introduction of GOCI-II Atmospheric Correction Algorithm and Its Initial Validations (GOCI-II 대기보정 알고리즘의 소개 및 초기단계 검증 결과)

  • Ahn, Jae-Hyun;Kim, Kwang-Seok;Lee, Eun-Kyung;Bae, Su-Jung;Lee, Kyeong-Sang;Moon, Jeong-Eon;Han, Tai-Hyun;Park, Young-Je
    • Korean Journal of Remote Sensing
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    • v.37 no.5_2
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    • pp.1259-1268
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    • 2021
  • The 2nd Geostationary Ocean Color Imager (GOCI-II) is the successor to the Geostationary Ocean Color Imager (GOCI), which employs one near-ultraviolet wavelength (380 nm) and eight visible wavelengths(412, 443, 490, 510, 555, 620, 660, 680 nm) and three near-infrared wavelengths(709, 745, 865 nm) to observe the marine environment in Northeast Asia, including the Korean Peninsula. However, the multispectral radiance image observed at satellite altitude includes both the water-leaving radiance and the atmospheric path radiance. Therefore, the atmospheric correction process to estimate the water-leaving radiance without the path radiance is essential for analyzing the ocean environment. This manuscript describes the GOCI-II standard atmospheric correction algorithm and its initial phase validation. The GOCI-II atmospheric correction method is theoretically based on the previous GOCI atmospheric correction, then partially improved for turbid water with the GOCI-II's two additional bands, i.e., 620 and 709 nm. The match-up showed an acceptable result, with the mean absolute percentage errors are fall within 5% in blue bands. It is supposed that part of the deviation over case-II waters arose from a lack of near-infrared vicarious calibration. We expect the GOCI-II atmospheric correction algorithm to be improved and updated regularly to the GOCI-II data processing system through continuous calibration and validation activities.

Development of High-Resolution Fog Detection Algorithm for Daytime by Fusing GK2A/AMI and GK2B/GOCI-II Data (GK2A/AMI와 GK2B/GOCI-II 자료를 융합 활용한 주간 고해상도 안개 탐지 알고리즘 개발)

  • Ha-Yeong Yu;Myoung-Seok Suh
    • Korean Journal of Remote Sensing
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    • v.39 no.6_3
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    • pp.1779-1790
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    • 2023
  • Satellite-based fog detection algorithms are being developed to detect fog in real-time over a wide area, with a focus on the Korean Peninsula (KorPen). The GEO-KOMPSAT-2A/Advanced Meteorological Imager (GK2A/AMI, GK2A) satellite offers an excellent temporal resolution (10 min) and a spatial resolution (500 m), while GEO-KOMPSAT-2B/Geostationary Ocean Color Imager-II (GK2B/GOCI-II, GK2B) provides an excellent spatial resolution (250 m) but poor temporal resolution (1 h) with only visible channels. To enhance the fog detection level (10 min, 250 m), we developed a fused GK2AB fog detection algorithm (FDA) of GK2A and GK2B. The GK2AB FDA comprises three main steps. First, the Korea Meteorological Satellite Center's GK2A daytime fog detection algorithm is utilized to detect fog, considering various optical and physical characteristics. In the second step, GK2B data is extrapolated to 10-min intervals by matching GK2A pixels based on the closest time and location when GK2B observes the KorPen. For reflectance, GK2B normalized visible (NVIS) is corrected using GK2A NVIS of the same time, considering the difference in wavelength range and observation geometry. GK2B NVIS is extrapolated at 10-min intervals using the 10-min changes in GK2A NVIS. In the final step, the extrapolated GK2B NVIS, solar zenith angle, and outputs of GK2A FDA are utilized as input data for machine learning (decision tree) to develop the GK2AB FDA, which detects fog at a resolution of 250 m and a 10-min interval based on geographical locations. Six and four cases were used for the training and validation of GK2AB FDA, respectively. Quantitative verification of GK2AB FDA utilized ground observation data on visibility, wind speed, and relative humidity. Compared to GK2A FDA, GK2AB FDA exhibited a fourfold increase in spatial resolution, resulting in more detailed discrimination between fog and non-fog pixels. In general, irrespective of the validation method, the probability of detection (POD) and the Hanssen-Kuiper Skill score (KSS) are high or similar, indicating that it better detects previously undetected fog pixels. However, GK2AB FDA, compared to GK2A FDA, tends to over-detect fog with a higher false alarm ratio and bias.

Establishing Optimal Conditions for LED-Based Speed Breeding System in Soybean [Glycine max (L.) Merr.] (LED 기반 콩[Glycine max (L.) Merr.] 세대단축 시스템 구축을 위한 조건 설정)

  • Gyu Tae Park;Ji-Hyun Bae;Ju Seok Lee;Soo-Kwon Park;Dool-Yi Kim;Jung-Kyung Moon;Mi-Suk Seo
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.68 no.4
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    • pp.304-312
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    • 2023
  • Plant breeding is a time-consuming process, mainly due to the limited annual generational advancement. A speed breeding system, using LED light sources, has been applied to accelerate generational progression in various crops. However, detailed protocols applicable to soybeans are still insufficient. In this study, we report the optimized protocols for a speed breeding system comprising 12 soybean varieties with various maturity ecotypes. We investigated the effects of two light qualities (RGB ratio), three levels of light intensity (PPFD), and two soil conditions on the flowering time and development of soybeans. Our results showed that an increase in the red wavelength of the light spectrum led to a delay in flowering time. Furthermore, as light intensity increased, flowering time, average internode length, and plant height decreased, while the number of nodes, branches, and pods increased. When compared to agronomic soil, horticultural soil resulted in an increase of more than 50% in the number of nodes, branches, and pods. Consequently, the optimal conditions were determined as follows: a 10-hour short-day photoperiod, an equal RGB ratio (1:1:1), light intensity exceeding 1,300 PPFD, and the use of horticultural soil. Under these conditions, the average flowering time was found to be 27.3±2.48 days, with an average seed yield of 7.9±2.67. Thus, the speed breeding systems reduced the flowering time by more than 40 days, compared to the average flowering time of Korean soybean resources (approximately 70 days). By using a controlled growth chamber that is unaffected by external environmental conditions, up to 6 generations can be achieved per year. The use of LED illumination and streamlined facilities further contributes to cost savings. This study highlights the substantial potential of integrating modern crop breeding techniques, such as digital breeding and genetic editing, with generational shortening systems to accelerate crop improvement.