• Carbon letters
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• v.13 no.2
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• pp.99-108
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• 2012

The sol-gel technique has been studied to fabricate a homogeneous Fe-Mo/MgO catalyst. Ambient effects (air, Ar, and $H_2$) on thermal decomposition of the citrate precursor have been systematically investigated to fabricate an Fe-Mo/MgO catalyst. Severe agglomeration of metal catalyst was observed under thermal decomposition of citrate precursor in air atmosphere. Ar/$H_2$ atmosphere effectively restricted agglomeration of bimetallic catalyst and formation of highly-dispersed Fe-Mo/MgO catalyst with high specific surface-area due to the formation of Fe-Mo nanoclusters within MgO support. High-quality thin-multiwalled carbon nanotubes (t-MWCNTs) with uniform diameters were achieved on a large scale by catalytic decomposition of methane over Fe-Mo/MgO catalyst prepared under Ar-atmosphere. The produced t-MWCNTs had outer diameters in the range of 4-8 nm (average diameter ~6.6 nm) and wall numbers in the range of 4-7 graphenes. The as-synthesized t-MWCNTs showed product yields over 450% relative to the utilized Fe-Mo/MgO catalyst, and indicated a purity of about 85%.

• International Journal of Automotive Technology
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• v.2 no.2
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• pp.63-75
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• 2001

This paper describes the development of THC reduction technologies compliant with SULEV regulations. Technologies embodied by the developmental work include improvement of fuel spray atomization, quick warm-up through coolant control shut of, and acceleration of fuel atomization for the fast rise of cylinder head temp inside the water jacket as well as the improvement of combustion state. The technologies likewise entail reduced HC while operating in lean A/F condition during engine warm-up with the cold lean burn technology, individual cylinder A/F control for improvement of catalytic converting efficiency, after-treatment such as thin-wall catalyst, HC-adsorber and EHC and etc, through vehicle application evaluation in cold start. We carried out an experimental as well as a practical study against SULEV regulations, and the feasibility of adopting these items in vehicle was likewise investigated.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.70-77
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• 2003

It is well Down that the growth of carbon nanotubes (CNTs) by chemical vapor deposition (CVD) using a transition metal catalyst is greatly enhanced in a nitrogen environment. We show here that the enhanced growth is closely related to the activated nitrogen and it's incorporation into the CNT wall and cap during growth. This behavior is consistent with theoretical calculations of CNx thin films, showing that nitrogen incorporation to the graphitic basal plane reduces the elastic strain energy for curving the graphitic layer. Enhanced CNT growth by nitrogen incorporation is thus due to a decrease in the activation energies required for nucleation and growth of the tubular graphitic layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.466-473
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• 2018

Nickel oxide(NiO) thin films, nanorods, and carbon nanotube(CNT)/NiO core-shell nanorod structures are fabricated by sputtering Nickel at different deposition time on alumina substrates or single wall carbon nanotube templates followed by oxidation treatments at different temperatures, 400 and $700^{\circ}C$. Structural analyses are carried out by scanning electron microscopy and x-ray diffraction. NiO thinfilm, nanorod and CNT/NiO core-shell nanorod structurals of the gas sensor structures are tested for detection of $H_2S$ gas. The NiO structures exhibit the highest response at $200^{\circ}C$ and high selectivity to $H_2S$ among other gases of NO, $NH_3$, $H_2$, CO, etc. The nanorod structures have a higher sensing performance than the thin films and carbon nanotube/NiO core-shell structures. The gold catalyst deposited on NiO nanorods further improve the sensing performance, particularly the recovery kinetics.