• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.134-135
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• 2006

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

• 한국결정성장학회지
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• 제18권5호
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• pp.217-224
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• 2008

수평 전기로에서 $ZnIn_2Se_4$ 단결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $ZnIn_2Se_4$ 단결정 박막을 반절연성 GaAs(100) 기판에 성장시켰다. $ZnIn_2Se_4$ 단결정 박막의 성장 조건을 증발원의 온도 $630^{\circ}C$, 기판의 온도 $400^{\circ}C$였고 성장 속도는 0.5 $\mu m/hr$였다. $ZnIn_2Se_4$ 단결정 박막의 결정성의 조사에서 10K에서 광발광(photoluminescence) 스펙트럼이 682.7nm ($1.816{\underline{1}}eV$)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요통곡선(DCRC)의 반폭치(FWHM)도 128 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농노와 이동도는 293 K에서 각각 $9.41\times10^{16}/cm^{-3}$, $292cm^2/V{\cdot}s$였다. $ZnIn_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293 K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 varshni공식에 따라 계산한 결과 $E_g(T)=1.8622\;eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$ 이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting energy ${\Delta}cr$값이 182.7meV이며 spin-orbit energy ${\Delta} so$값은 42.6meV임을 확인하였다. 10 K일 때 광전류 봉우리들은 n= 1, 27일때 $A_{1}-$, $B_{1}-$와 $C_{27}-exciton$ 봉우리임을 알았다.

• 한국결정성장학회지
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• 제21권3호
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• pp.99-104
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• 2011

단결정 성장을 위한 $MgGa_2Se_4$ 다결정은 수평 전기로에서 합성하였으며, 결정구조는 rhombohedral이고 격자상수 $a_0$는 3.953 ${\AA}$, $c_0$는 38.890 ${\AA}$였다. $MgGa_2Se_4$ 단결정박막은 HWE(Hot Wall Epitaxy) 방법으로 반절연성 GaAs(100)기판에 성장시켰다. 단결정박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$에서 진행되었으며 성장 속도는 0.5 ${\mu}m/h$였다. 단결정박막의 결정성은 이중 결정 x-선 회절곡선의 반폭치와 X-선 회절무늬의 ${\omega}-2{\theta}$로부터 구하여 최적 성장 조건을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $6.21{\times}10^{18}/cm^3$, 248 $cm^2/v{\cdot}s$였다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수 스펙트럼을 10 K에서 293 K까지 측정하였다. 광흡수 스펙트럼으로부터 구한 에너지 갭 $E_g(T)$는 varshni 공식 $E_g(T)=E_g(0)=({\alpha}T^2/T+{\beta})$을 잘 만족함을 알 수 있었다. 여기서 $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$, ${\beta}=251\;K$였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• 한국전산구조공학회논문집
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• 제30권2호
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• pp.111-117
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• 2017

본 논문에서는 유한요소 자유진동해석을 수행하여 박판 보에서의 국소변형효과를 조사하였다. 자유진동해석은 단일셀 및 다중셀 박스보에 대해 수행하였으며, 풍력발전 블레이드를 가장 단순하게 모사할 수 있는 단일셀 박스보를 먼저 해석하였다. 쉘요소 해석결과를 보요소 해석결과와 비교하여 보았을 때 박스 보의 박판 두께가 정확도에 매우 중요한 역할을 함을 확인하였다. 두께가 얇은 경우에는 쉘의 국소변형(또는 쉘 모드)가 주요하게 나타난 반면에 두꺼울 경우에는 전단변형의 효과가 크게 나타남을 알 수 있었다. 목이 있는 단일셀 박스보에서의 국소변형은 목 주위에 집중되어 나타남을 확인하였다. 마지막으로 실제 블레이드와 유사한 다중셀 테이퍼 보의 주파수 및 모드형상을 분석하였다. 보 요소 해석결과는 쉘 요소 결과와 비교하여 약 5~7% 주파수 차이를 보였으며, 이는 보요소가 국소변형을 제대로 모사하지 못하기 때문이다. 특히 래그모드(lagwise mode)의 경우에는 단면의 분할 정도의 영향보다 국소변형의 효과가 매우 크다는 것을 알 수 있었다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2174-2183
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• 2021

Helium cooled solid breeder blanket as an important blanket candidate of the Tokamak fusion reactor uses ceramic pebble bed for tritium breeding. Considering the poor effective thermal conductivity of the ceramic breeder pebble bed, thin structure of tritium breeder pebble bed is usually adopted in the blanket design. The container wall has a great influence on the thin pebble bed packing structure, especially for the assembly of mono-sized particles, and thin pebble bed will appear anisotropic effective thermal conductivity phenomenon. In this paper, thin ceramic pebble beds composed of 1 mm diameter Li₄SiO₄ particles are generated by the EDEM 2.7. The effective thermal conductivity of different thickness pebble beds in the three-dimensional directions are analyzed by three-dimensional thermal network method. It is observed that thin Li₄SiO₄ pebble bed showing anisotropic effective thermal conductivity under the practical design size. Normally, the effective thermal conductivity along the bed vertical direction is higher than the horizontal direction due to the gravity effect. As the thickness increases from 10 mm to 40 mm, the effective thermal conductivity of the pebble bed gradually increases.

• Structural Engineering and Mechanics
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• 제91권1호
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• pp.75-86
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• 2024

In this paper, the porous metal PM-35 is proposed as the filler material of filled thin-walled tubes (FTTs), and a series of experimental study is conducted to investigate the dynamic behavior and energy absorption performance of PM-35 filled thin-walled tubes under impact loading. Firstly, cylinder solid specimens of PM-35 steel are tested to investigate the impact mechanical behavior by using the Split Hopkinson pressure bar set (SHP); Secondly, the filled thin-walled tube specimens with different geometric parameters are designed and tested to investigate the feasibility of PM-35 steel applied in FTTs by the orthogonal test. According to the results of this research, it is concluded that PM-35 steel is with the excellent characteristics of high energy absorption capacity and low yield strength, which make it a potential filler material for FTTs. The micron-sizes pore structure of PM-35 is the main reason for the macroscopic mechanical behavior of PM-35 steel under impact loading, which makes the material to exhibit greater deformation when subjected to external forces and obviously improve the toughness of the material. In addition, PM-35 steel core-filled thin-wall tube has excellent energy absorption ability under high-speed impact, which shows great application potential in the anti-collision structure facilities of high-speed railway and maglev train. The parameter V0 is most sensitive to the energy absorption of FTT specimens under impact loading, and the sensitivity order of different variations to the energy absorption is loading speed V0>D/t>D/L. The loading efficiency of the FTT is affected by its different geometry, which is mainly determined by the sleeve material and the filling material, which are not sensitive to changes in loading speed V0, D/t and D/L parameters.

• 한국정밀공학회지
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• 제24권3호
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• pp.134-139
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• 2007

We report the suspension of individual multi-walled carbon nanotubes (MWNTs) from the bottom substrate using deep trench electrodes that were fabricated using optical lithography. During drying of the solution in dielectrophoretic assembly, the capillary force pulls the MWNT toward the bottom substrate, and it then remains as a deformed structure adhering to the bottom substrate after the solution has dried out. Small-diameter MWNTs cannot be suspended using thin electrodes with large gaps, but large-diameter MWNTs can be suspended using thicker electrodes. We present the statistical experimental results for successful suspension, as well as the feasible conditions for a MWNT suspension based on a theoretical approach.