• Journal of Fashion Business
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• v.7 no.1
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• pp.27-37
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• 2003

This study is the first part of the research to reveal the effects of somatotype characteristics on body temperature control reaction as well as thermal sensation. Nine healthy female collegians (classified into 3 body types of thin, normal, and obese according to Rohrer index) living in Busan were chosen as the subjects. The following are the results: Significant differences of skin temperature appeared in the parts of epigastrium (thin/normal>obese), anterior forearm (normal>thin/obese), and anterior leg (obese > thin/normal) as well as mean skin temperature. Mean skin temperature temporarily dropped owing to the exercise but tended to recover as time went by. Skin temperature of normal/thin shows higher than obese type. The change of skin temperature was noticed in the order of forehead > epigastrium > anterior forearm > anterior leg > anterior thigh (obese type) ; epigastrium > forehead > anterior forearm > anterior thigh > anterior leg (normal type) ; epigastrium > forehead > anterior forearm > anterior thigh > anterior leg (thin type, before and after exercise); epigastrium > forehead > anterior forearm > anterior leg > anterior thigh (thin type, during exercise). Significant differences were shown in the temperature change inside clothes according to somatotypes. No significant differences were revealed in thermal sensation, moisture sensation, and comfortable sensation according to body types and time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.976-981
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• 2009

This paper proposed optimal design and microcontroller driver for driving the thin-type ultrasonic motor. To find the optimal size of the stator, motions of the motor were simulated using ATILA by changing length, width and thickness of the ceramics. Two sinusoidal waves which have 90 degree phase difference were needed for driving the thin-type motor. The thin-type ultrasonic motor driver was composed of microcontroller(Atmega128), push-pull inverter, encoder and AD-converter. Microcontroller generates four square waves which have variable frequency and 25[%] duty ratio in $20{\sim}150$[kHz]. The output signals of microcontroller were converted to sine wave and cosine wave by push-pull inverter and were applied to the thin-type ultrasonic motor. The encoder and AD-converter were used for maintaining speed of the thin-type ultrasonic motor. The AD-converter controlled DC voltage of inverter in accordance with output signal of encoder. Using the driver, characteristics of the motor as speed and torque were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.145-146
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• 2006

The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.333-338
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• 1999

Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• ALGAE
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• v.21 no.2
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• pp.209-216
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• 2006

The characteristics of Peyssonnelia capensis Montagne (Peyssonneliaceae, Rhodophyta) from Jeju Island were investigated in order to clarify the species entity and re-evaluate taxonomic position. The morphological variations of the Peyssonnelia capensis from Jeju Island were divided into two types, the thin thallus type and the thick thallus type. The thin thallus type is characterized by thin, soft, orbicular, slightly lobed thallus with entire to undulate margin, and compact rhizoids. The thick thallus type has thick and stiff thallus with sinuate margin and scattered rhizoids, and has more branches than the thin thallus type. The basal layer and the epithallium of thin thallus type are similar to those of thick thallus types in their structure. However, the hypothallial cells of the thick thallus type are longer than those of the thin thallus type. The erect filament of thick thallus type has more cells than those of the thin thallus type. Tetrasporangial nemathecia are distinctly protruded. Mature tetrasporangia of this species are divided cruciately into four spores as those of other Peyssonneliaceae. In addition to their morphological and anatomical distinctness between two types, the nucleotide sequence analyses of SSU and ITS2 region make no differences among populations from Jeju and other localities in Korea. Therefore these two morphological variation may not base on genetic variation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.617-624
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• 1999

The spiral type thin-film inductor performed in high frequency at 2-5[MHz] range is analyzed by 2-dimensional Finite Element Method(2D FEM). The features of micro thin-film inductor have complicated electromagnetic phenomenon such as skin effect, proximity effect and magnetic saturation. To develope miniatured magnetic device considering these features, it is important to predict the property of the thin film inductor according to design parameter. In this paper, we present the 2D FEM analysis for the spiral type thin film inductor. The characteristics of inductor from point of view of inductance, resistance and quality factor are studied according to design parameter and various pattern construction.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.