• 제목/요약/키워드: Thin-film multilayer

검색결과 234건 처리시간 0.026초

A New Technique to Improve ZnO-based FBAR Device Performances

  • Mai, Linh;Lee, Jae-Young;Pham, Van Su;Yoon, Gi-Wan
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국해양정보통신학회 2007년도 춘계종합학술대회
    • /
    • pp.437-440
    • /
    • 2007
  • This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.

  • PDF

C.C.D Camera를 이용한 RHEED Intensity Oscillation 측정

  • 김재훈;민항기;김재성
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 1994년도 제6회 학술발표회 논문개요집
    • /
    • pp.122-123
    • /
    • 1994
  • RHEED ppattern을 C.C.D Camera를 이용하여 관측한 후 C.C.D outpput signal을 Frame Garbber를 이용하여 Digitize하였다. Digitize된 RHEED ppattern의 정보로부터 원하는 Sppot의 intensity를 Image pprocessing Software를 개발하여 측정할 수 있다. [그림 1] 특히 thin film growth를 monitor하기 위하여 RHEED diffraction Sppot의 Intensity oscillation을 측정할 경우 실시간 측정이 필요하며 이를 위해 매우 빠른 속도의 data aquisition과 dispplay를 필요로 한다. 그림2는 이런 조건을 만족하는 software를 개발하여 실시간으로 측정한 AlGaAs/GaAs. multilayer RHEED Oscillation을 보여주고 있다. 이 실험은 매우 간단하고, 특별한 주의를 요하지 않으며, 측정되는 RHEED Sppot을 눈으로 동시에 관찰할 수 있어 실험 상황을 좀더 쉽게 monitor할 수 있게 해준다. 또한 data-aquitition. data-analysis, data-dispplay를 한 대의 compputer를 이용해 손쉽고 값싸게 할 수 있으므로, opptical fiber와 pphoto-diode, X-Y recorder등을 동원한 기존의 번잡한 실험을 대체할 수 있을 것이다.

  • PDF

pH-ISFET 마이크로프로브의 製作과 그 生醫學的 應用 (Fabrication and Its Biomedical Application of the pH-ISFET Microprobe)

  • 이광만;손병기
    • 대한전자공학회논문지
    • /
    • 제25권11호
    • /
    • pp.1335-1341
    • /
    • 1988
  • A pH-ISEFET microprobe for in vivo measurements has been fabricated by combining ISFET (SL-IIS) chip and capillary thin film reference electrode. A two-step TCE oxidation for the gate oxide layer and multilayer encapsulation using silicone rubber and epoxy were specially used for the improvement of the stability and temperature dependence of the ISFET's. The measured sensitivit, response time and temperature dependence of the pH-ISFET microprobes are 50 mV/pH, less than one second, and - 0.01 pH/$^{\circ}$ , respectively. By operating continuously more than 40 days, a long term stability of 0.016 pH/day is obtained. The result of pH monitoring of femoral arterial blood in a rabbit is fairly good agreement with the value of blood gas analysis.

  • PDF

Fractal Dimension of Magnetic Domain Walls in CoFe/Pt Multilayers

  • Lee, Kang-Soo;Kim, Dong-Hyun;Choe, Sug-Bong
    • Journal of Magnetics
    • /
    • 제15권3호
    • /
    • pp.99-102
    • /
    • 2010
  • We present the fractal properties of the magnetic domain walls in $(5-{\AA}\;Co_{90}Fe_{10}/10-{\AA}\;Pt)_n$ multilayer films with perpendicular magnetic anisotropy for the number of repeats n (1 to 5). In these films, the magnetization reversed due to the domain wall propagation throughout the films with rare nucleations. As n increased, it was observed that the jaggedness of the domain walls increased noticeably, which is possibly due to the accumulation of irregularities at the layer interfaces. The jaggedness of the domain walls was analyzed in terms of the fractal dimension by use of the ruler method, and it was revealed that the fractal dimension significantly changed from $1.0{\pm}0.002$ to $1.3{\pm}0.05$ as n increased from 1 to 5.

A Method to Improve Bragg Reflectors Quality in FBAR Devices

  • Mai, Linh;Lee, Jae-Young;Pham, Van Su;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
    • /
    • 제5권4호
    • /
    • pp.316-319
    • /
    • 2007
  • This paper presents some methods to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors (BR) into which very thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. These methods resulted in an excellent device improvement in terms of return loss and Q-factors.

적층 칩 캐패시터 제작에 있어 $BaTiO_3$ 분말 크기에 따른 유전 특성 (Dielectric properties of $BaTiO_3$ Ceramic for Mutilayer Ceramic Capacitor)

  • 윤중락;이헌용
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
    • /
    • pp.33-34
    • /
    • 2008
  • Barium titanate (BaTiO3) is one of the most important dielectric materials for the electronic devices, such as MLCC (Multilayer Ceramic Capacitor). The thickness of the dielectric thin film in MLCC has become thinner and reached about 0.8 ${\mu}m$. Further down sizing is required for the higher performance. For this reason, we should take into account for the size effect of Barium titanate powders. In this study, we demonstrated that size effect for BaTiO3 (0.2 ~ 0.5 ${\mu}m$, hydrothermal BT) could be estimates by using dielectric properties analysis together with the powder properties.

  • PDF

열응력과 잔류응력하의 다층박막의 피로수명 해석 (Fatigue Life Analysis on Multi-Stacked Film Under Thermal and Residual Stresses)

  • 박준협
    • 대한기계학회논문집A
    • /
    • 제29권4호
    • /
    • pp.526-533
    • /
    • 2005
  • Reliability problem in inkjet printhead, one of MEMS devices, is also very important. To eject an ink drop, the temperature of heater must be high so that ink contacting with surface reaches above $280^{o}C$ on the instant. Its heater is embedded in the thin multi-layer in which several materials are deposited. MEMS processes are the main sources of residual stresses development. Residual stress is one of the factors reducing the reliability of MEMS devices. We measured residual stresses of single layers that consist of multilayer. FE analysis is performed using design of experiment(DOE). Transient analysis for heat transfer is performed to get a temperature distribution. And then static analysis is performed with the temperature distribution obtained by heat transfer analysis and the measured residual stresses to get a stress distribution in the structure. Although the residual stress is bigger than thermal stress, thermal stress is more influential on fatigue life.

미세 압전 캔틸러버를 이용한 마이크로 폰 및 마이크로 스피커

  • 이승섭
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 1997년도 춘계학술대회 논문집
    • /
    • pp.347-351
    • /
    • 1997
  • A micromachined piezoelectic cantilever transducer,which works both as a microphone and as a microspeaker,has been fabricated and tested. The 2000*2000*3.mu.m .sap2. cantilever has oxide(ZnO)piezoelectric thin film on a supporting layer of low-pressure chemical-vapor-deposited(LPCVD)low-stress siliconnitride. A highlight of the fabrication process which may also be relevant for other micromachined stuctures is the technique for producing a flat,multilayer cantilever. The measured microphone sensitivity is fairly constant at 2 mV/.mu.bar in the low frequency range and rise to 20 mV/.mu.bar at the lowest resonant frequency of 890 Hz. The 2 mV/.mu.bar sensitivity is the highest report to data for a microphone with a micromachined diaphragm. When measured into a 2 cm/sap3 coupler with 4V (zero-park)drive,the microspeaker output sound pressure level(SPL) is 75 dB at 890 Hz. It increases to approximately 100dB SPL at 4.8kHz with 6V(zero-park)drive. The measured microphone frequency response agrees well with the results of an ABAQUS simulation.

CCFL 구동을 위한 압전변압기 제작과 전기적 특성 (Electrical Characteristics of Manufactured Multilayer Piezoelectric Transformer for driving The CCFL(Cold Cathode Fluorescent Lamp))

  • 한재현;임영철;양승학;권기현
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2002년도 전력전자학술대회 논문집
    • /
    • pp.777-780
    • /
    • 2002
  • 최근 백라이트용 램프를 구동하기 위해 사용하는 승압용 변압기를 압전 변압기로 도입하는 연구가 활발히 진행되고 있다. 압전 변압기는 종래의 권선 변압기에서 볼 수 있었던 누설 자속과 권선등에 의한 저항 손실이 없으며, 전자유도에 의한 노이즈와 자체 손실이 없고, 권선형의 자기소자로 인한 소형화에 한계를 가지는 큰 단점을 해결해 주고 있다. 본 논문에서는 11층의 적층형 압전 변압기를 제작하고 이 제작된 적층형 압전 변압기의 전기적 특성분석을 통한 CCFL(Cold Cathode Fluorescent Lamp) 구동용 인버터의 승압용 변압기로써 응용가능성을 제시하였다.

  • PDF

Modeling and Simulation of Line Edge Roughness for EUV Resists

  • Kim, Sang-Kon
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제14권1호
    • /
    • pp.61-69
    • /
    • 2014
  • With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.