• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.749-751
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• 2007

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.484-488
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• 1997

BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

• 한국광학회지
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• 제14권4호
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• pp.355-358
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• 2003

얇은 금속 중간층이 있는 광섬유-평면도파로 결합기의 편광 및 파장 선택적 결합특성에 관한 실험 결과를 보고한다. 금속 박막층의 두께와 최상부층의 굴절률이 소자의 특성에 미치는 영향을 측정하고 그 결과를 설명하였다. 제안된 소자는 편광기, 광변조기 및 광센서 등의 다양한 응용 가능성을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• 한국항해학회지
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• 제14권2호
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• pp.77-82
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• 1990

In this paper the results for thin multi-layer InGaAsP($1.3{\mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{\circ}C$/min and the growing temperature of $630^{\circ}C$ were obtained as $0.11 {\mu}m$/min and $0.06 {\mu}m$/min, respectively, by the uniform cooling with two phase solution technique.

• Current Photovoltaic Research
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• 제5권1호
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• pp.28-32
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• 2017

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.113-116
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• 2008

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.463-465
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• 2002

In order to increase perpendicular magnetic anisotropy of magnetic layer and prepare magnetic recording layer with a good quality by epitaxial growth between magnetic layer and, we prepared Co$\_$77/Cr$\_$20/Ta$_3$/Si doublelayer for perpendicular magnetic recording media which was promoted as next generation recording media on slide glass substrate. The thickness of magnetic layer and Underlayer were varied from 20 to 100 nm and 5 to 100 m, respectively. The surface morphology and crystal structure of the CoCrTa/Si film were examined with XRD and AFM. Prepared thin films showed improvement of dispersion angle of c-axis orientation Δ$\theta$$\_$50/ caused by inserting amorphous Si underlayer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.