• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
• /
• pp.85-88
• /
• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• 대한금속재료학회지
• /
• 제47권9호
• /
• pp.591-596
• /
• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• 한국자기학회지
• /
• 제16권6호
• /
• pp.283-286
• /
• 2006

고밀도 자기기록용 Ba-페라이트/$SiO_{2}$ 자성박막에서 계면확산 장벽으로써 ${\alpha}-Al_{2}O_{3}$ 버퍼층의 역할을 연구하였다. 열처리동안 $1900{\AA}$의 두께를 가진 비정질 Ba-페라이트/$SiO_{2}$ 박막에서 계면확산은 약 $700^{\circ}C$에서 일어나기 시작하였다. 열처리온도를 $800^{\circ}C$까지 증가시켰을 때, 계면확산은 자기특성을 저하시킬 정도로 급격히 진행되었다. 고온에서의 계면확산을 억제하기 위하여, $110{\AA}$ 두께의 ${\alpha}-Al_{2}O_{3}$ 버퍼층을 Ba-페라이트/$SiO_{2}$ 박막의 계면에 증착하여 사용하였다. Ba-페라이트/${\alpha}-Al_{2}O_{3}/SiO_{2}$ 박막에서는 $800^{\circ}C$의 고온까지 열처리하여도 계면확산이 심각하게 일어나지는 않았다. ${\alpha}-Al_{2}O_{3}$ 버퍼층에 의하여 계면확산이 억제되기 때문에 Ba-페라이트 자성박막의 포화자속밀도와 보자력이 향상되었다. 따라서 Ba-페라이트/$SiO_{2}$ 박막의 계면에서 ${\alpha}-Al_{2}O_{3}$ 버퍼층은 $SiO_{2}$ 기판 성분의 계면확산 장벽으로 사용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.378-378
• /
• 2007

In this study, liquid crystal (LC) aligning capabilities for homeotropic alignment on the $ZrO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $ZrO_x$ thin film were investigated. The uniform LC alignment on the $ZrO_x$ thin film surfaces and good thermal stabilities with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $ZrO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $ZrO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $ZrO_x$ thin film layer with. oblique electron beam evaporation.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권2호
• /
• pp.126-133
• /
• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• 한국태양에너지학회 논문집
• /
• 제39권1호
• /
• pp.1-9
• /
• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• 마이크로전자및패키징학회지
• /
• 제29권3호
• /
• pp.49-53
• /
• 2022

초박형 유리(Ultra-Thin Glass, UTG)는 디스플레이 보호용 커버 윈도우로 폴더블(foldable) 디스플레이에 사용되고 있으며, 향후에는 롤러블(rollable) 디스플레이나 다양한 플렉시블(flexible) 전자기기에 확대 적용될 것으로 예상되고 있다. 폴더블 디스플레이의 경우, 사용자들에 의해 굽힘과 터치 펜에 의해 충격을 받게 되고, 이 외에도 낙하 등 다른 외부충격에 쉽게 노출되어 있다. 초박형 유리는 100 ㎛ 이하로 두께가 얇고 취성하여 여러 외부 충격에 의해 쉽게 균열이나 파단이 발생할 수 있고, 이러한 균열이나 파단은 폴더블 디스플레이에 심각한 신뢰성 문제를 야기한다. 따라서, 본 연구에서는 초박형 유리의 내충격 신뢰성을 평가하는 펜 낙하 실험을 유한 요소 모델로 구성하고, 초박형 유리의 내충격 신뢰성을 향상시키기 위한 기계적 모델링을 진행하였다. 초박형 유리층 상부 혹은 하부에 보강층을 삽입했을 때, 펜 낙하에 의해 초박형 유리층에 작용하는 응력 메커니즘을 분석하였고, 그에 따라 신뢰성 향상을 위한 최적의 구조를 제시하였다. 또한 초박형 유리의 강도에 따른 최대 펜 낙하 높이를 예측할 수 있도록 펜 낙하 높이에 따라 초박형 유리층에 작용하는 최대 주 응력 값을 분석하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.363-366
• /
• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• 한국환경보건학회지
• /
• 제2권1호
• /
• pp.5-9
• /
• 1975

For analysis of Xanthene dyes according to the developing solvent and adsorbent was applied to Thin-layer chromatography with silicagel and cellulose plate. Silicagel chromato-plate used were prepared under different condition of activation. Using eight developing solvent, the influence of the condition for activation upon the separation of Xanthene dyes was investigated. The results are shown in Table 3. Methyl ethyl ketone+Acetone+$H_2O$ (10:0.1:0.4) mixture and n-butanol+Ammonia water (4:1) mixture gave clear separation for Xanthene dyes, including Fluorescein, Erythrosine Rhodamin B, Eosine, Rose bengale, phloxine and Acid red those Rf values decrease in the described ordor. Methyl ethyl ketone+Acetone+$H_2O$ (10:0.1:0.4) was applied to two adsorbents which were purchased from different manufactures. The results of Chromatograms are obtained Figure 6.

• 전자공학회논문지D
• /
• 제34D권1호
• /
• pp.8-13
• /
• 1997

An electric field due to point dipole within conductor-backed thin dielectric layer above the earth is calculated by using saddle point method When the dielectric layer is thin enough to support a cutoff mdoe, we show that the field may be approximated by sum of contributions of branch points of TE mode and poles of tM mode and that the branch points and poles contributions are interpreted as an evanescent lateral waves and leaky waves, respectively.