Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films

SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향

  • Jang, Jae-Hoon (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Lee, Dong-Gun (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Lee, Hee-Young (School of Metallurgical and Materials Engineering, Yeungnam University) ;
  • Jo, Sang-Hee (Department of Inorganic Materials Engineering, Kyungpook National University)
  • 장재훈 (영남대학교 재료금속공학부) ;
  • 이동근 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 2003.08.22

Abstract

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

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