• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• Laser Solutions
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• v.2 no.3
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• pp.52-61
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• 1999

The laser induced forward transfer(LIFT) technique employs a pulsed laser to transfer parts of a thin metal film from an optically transparent target onto an arbitrary substrate in close proximity to the metal film on the target. In this work, a two-step method, the combination of LIFT process, in which a Au film deposited on the $Al_2$O$_3$ substrate by Nd:YAG laser and subsequent Au electroless metal plating on the by LIFT process generated Au seed, was presented. The influence of laser parameters, wavelength, laser power, film thickness and overlap ratio of pulse tracks, on the shapes of deposit and conductor line after electroless plating is experimentally studied. As a results, the threshold power densities for ablation, deposition and metallization were determined and comparison of threshold value between the wave length 1064nm and the second harmonic generated 532nm. In odor to determine a possible application in the electronic industry, a smallest conduct spot size, line width and isolated line space were generated.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1229-1232
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• 2008

We have successfully manufactured high-quality top-contact organic thin-film transistors using inkjet technologies with sub-femtoliter droplet volume. Silver fine lines were directly patterned by inkjet on pentacene channel layers. The minimum width of silver lines was $1{\mu}m$ with without the need for pre-patterning or surface pretreatments. The mobility was $0.3\;cm^2/Vs$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.252-256
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• 2000

We investigated resistance development in Au/YBCO thin film meander lines during quench. The meander lines were fabricated by coating YBCO films insitu with a gold layer and patterning them by photolithography. The center stripe quenched fastest even though the flux flow resistance that appeared upon the current passing the critical current was uniform. Quench started at an area of the center stripe and propagate both through the gold layer and the sapphire substrate. Quench propagation speed was uniform and 60 cm/s at 30 V$_{rms}$.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.142.1-142.1
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• 2013

The patterning and doping technique enables graphene to replace the metal electrode as a charge injection layer in the pentacene based thin film transistor. However, it is known that pentacene molecules form lying-down coordination on the graphene surface. Pentacene thin film showed that the highly occupied molecular orbital is 0.2~0.4 eV lower in the standing up coordination than in the lying down coordination. Here, we report the formation of standing-up coordination and lowered HOMO level of the pentacene layer grown on the graphene layer doped with CYTOP.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Journal of the Korean Society of Visualization
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• v.9 no.2
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• pp.34-39
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• 2011

This paper presents a novel direct fabrication method of the thin metal film RTD temperature sensor array on an arbitrary curved surface by using MEMS technology to measure a distributed temperature field up to $300^{\circ}C$ without disturbing a fluid flow. In order to overcome the difficulty in the three dimensional photography of sensor patterning, the UV pre-irradiated photosensitive dry film resist technology has been developed newly. This method was applied to the fabrication of the temperature sensor array on a glass tube, which is arranged parallel and transverse to a main flow. Gold was used as a temperature sensing material. The resistance change was measured in a thermally controlled oven by increasing the environmental temperature. The linear increase in resistance change and a constant slope were obtained. Also, the sensitivity of each RTD temperature sensor was evaluated.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.11
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• pp.108-115
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• 2007

We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.9-10
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• 2006

The patterning for the active layer of organic semiconductors is important to attain completely organic-based OTFTs(Organic Thin Film Transistors). We studied on possibility of the application of the conventional photolithography technique to pattern the organic active layer poly(3-hexylthiophene)(P3HT). Patterned P3HT-based OTFTs with Bottom Contact(BC) configuration were fabricated using the conventional photolithography. We achieved field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the subtractive method, ${\sim}8{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^3$ in the additive one.