Study on characterization of OTFT for patterned active layer P3HT using conventional photolithography

포토리소그래피를 이용한 P3HT 활성층의 패터닝에 의한 OTFT 특성 연구

The patterning for the active layer of organic semiconductors is important to attain completely organic-based OTFTs(Organic Thin Film Transistors). We studied on possibility of the application of the conventional photolithography technique to pattern the organic active layer poly(3-hexylthiophene)(P3HT). Patterned P3HT-based OTFTs with Bottom Contact(BC) configuration were fabricated using the conventional photolithography. We achieved field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the subtractive method, ${\sim}8{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^3$ in the additive one.