• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.269-270
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• 2008

• 한국전자파학회논문지
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• 제24권2호
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• pp.214-217
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• 2013

본 논문에서는 박막 필름의 유전율 측정이 가능한 슬랏을 갖는 도파관형 공진기를 제안하였으며, 시료에 의한 공진 주파수 천이 현상으로부터 유전율을 측정한다. 이를 위하여 공진기 한 쪽에 얇은 슬랏을 두고, 그 위에 부착된 시료에 의해 공진기 내부 전자기장 분포가 섭동되어 공진 주파수 천이 현상이 발생될 수 있도록 하였다. 유전율에 따른 공진 주파수 천이량은 수치 해석을 통하여 계산하였으며, 이를 기반으로 2~3 GHz 대역에서 $65{\mu}m$ 두께의 박막 필름 유전율을 측정하였다. 측정 결과, 유전율은 평균 $3.3492{\pm}0.0605$(표준오차)를 보였으며, 유전체 공진기나 도파관 프로브 방법과 같은 다른 측정법들과 상호 비교를 통해 제안 방법의 유효성을 검증하였다.

• 비파괴검사학회지
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• 제35권5호
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• pp.314-320
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• 2015

본 연구에서는 펨토초의 펄스폭을 갖는 극초단 레이저를 이용하여 나노 스케일 초전도 재료의 열전도율을 측정하였다. 95 nm 두께의 이트륨바륨구리산화물($YBa_2Cu_3O_7-x$)을 티탄산스트론튬($SrTiO_3$) 기판 위에 펄스레이저 증착법으로 적층하여 시편을 제작하였으며, 유한차분법으로 1차원 과도 열전도 방정식의 해를 구하여 측정결과와 비교하였다. 곡선맞춤을 통하여 1.2 W/mK의 열전도율을 얻었으며, 이는 동일 재료의 벌크(bulk) 물성치에 비하여 낮은 값으로 확인된다. 본 연구는 마이크로/나노소자의 열설계를 위한 초전도 나노재료의 특성을 규명한다.

• 한국초전도ㆍ저온공학회논문지
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• 제5권2호
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Current Optics and Photonics
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• 제1권5호
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.193-194
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.565-568
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• 2005

We describe a new scheme of dispersive white-light interferometer that is capable of measuring the thickness profile of thin-film layers, for which not only the top surface height profile but also the film thickness of the target surface should be measured at the same time. The interferometer is found useful particularly for in-situ inspection of micro-engineered surfaces such as liquid crystal displays, which requires for high-speed implementation of 3-D surface metrology.

• 대한의용생체공학회:의공학회지
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• 제43권3호
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• pp.147-152
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• 2022

This research is to measure real-time temperature distribution inside a tissue-mimicking phantom for the safety and effectiveness evaluations of focused ultrasound (FUS) device capable of linear scanning stimulation. Since the focusing area of the FUS stimulation device is smaller than diameter of conventional thermal probe and keeps moving, it is impossible to monitor temperature distribution inside the phantom. By using the phantom with a thin film temperature sensor array inserted, real-time temperature change caused by the FUS device was measured. The translation of the measured temperature peak was also tracked successfully. The present phantom had been experimentally proven to be applicable to validate the performance and safety of the therapeutic ultrasound devices.

• Macromolecular Research
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• 제17권9호
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• pp.697-702
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• 2009

Mesoporous ethanesilica thin film was prepared using PEO-PLGA-PEO triblock copolymers as structure-directing agents and (1,2-bis(triethoxysilyl) ethane BTESE; bridged organosilicates) as inorganic precursors via one-step sol-gel condensation of ethanesilica precursors. The mesostructure of ethanesilica films is critically dependent on the processing experimental parameters after the hydrolyzed silica sol mixture was spin-cast. This study examined the effects of the block copolymer template/organosilica precursor ratio in the casting solution and aging period before calcination of the mesostructure. It was further demonstrated that mesoscopic ordering of organosilicate thin films is induced by the rearrangement of block copolymer template/organosilica hybrid during thermal decomposition of the PEO-PLGA-PEO triblock copolymer. The mesoporous structure and morphology were characterized by SAXS, TEM and solid-state NMR measurement.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.23-24
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• 2006

We present a dispersive scheme of white-light interferometry that enables not only to perform tomographical measurements of thin-film layers but also to measure a refractive index without mechanical depth scanning. The interferometry is found useful particularly for in-situ 3-D inspection of micro-engineered surfaces such as liquid crystal displays, semi-conductor and MEMS structure, which requires for high-speed implementation of 3-D surface metrology.