• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.269-270
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• 2008

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.214-217
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• 2013

In this paper, a waveguide-type resonator with a slot is proposed to measure permittivity of thin film from resonant frequency shifting by an attached MUT(Material Under Test). The MUT on the slot shifts resonant frequency by perturbation of electromagnetic field. Amount of shifting resonance frequency is dependent on the permittivity of MUT, and that relation is obtained from numerical simulation. The measured relative permittivity of a thin film with thickness of $65{\mu}m$ is 3.3492 with standard error of ${\pm}0.0605$ in the frequency range of 2 GHz to 3 GHz. Also the proposed method is compared with other measuring methods such as dielectric resonator and waveguide probe systems.

• Journal of the Korean Society for Nondestructive Testing
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• v.35 no.5
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• pp.314-320
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• 2015

The present study investigates the thermal characteristics of a nanoscale superconductor material. A thin-film of $YBa_2Cu_3O_7-x$ was deposited on a $SrTiO_3$ substrate by using a pulsed-laser deposition technique and characterized using an ultrafast laser system. In order to extract a thermal conductivity value, a numerical solution for a transient one-dimensional heat conduction equation was obtained using a finite-difference method. The curve-fit shows a value 1.2 W/mK, which is relatively lower than those of bulk materials. This research provides a material property of superconductor thin-film required for the thermal design of micro or nanodevices.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Current Optics and Photonics
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• v.1 no.5
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.193-194
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.565-568
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• 2005

We describe a new scheme of dispersive white-light interferometer that is capable of measuring the thickness profile of thin-film layers, for which not only the top surface height profile but also the film thickness of the target surface should be measured at the same time. The interferometer is found useful particularly for in-situ inspection of micro-engineered surfaces such as liquid crystal displays, which requires for high-speed implementation of 3-D surface metrology.

• Journal of Biomedical Engineering Research
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• v.43 no.3
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• pp.147-152
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• 2022

This research is to measure real-time temperature distribution inside a tissue-mimicking phantom for the safety and effectiveness evaluations of focused ultrasound (FUS) device capable of linear scanning stimulation. Since the focusing area of the FUS stimulation device is smaller than diameter of conventional thermal probe and keeps moving, it is impossible to monitor temperature distribution inside the phantom. By using the phantom with a thin film temperature sensor array inserted, real-time temperature change caused by the FUS device was measured. The translation of the measured temperature peak was also tracked successfully. The present phantom had been experimentally proven to be applicable to validate the performance and safety of the therapeutic ultrasound devices.

• Macromolecular Research
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• v.17 no.9
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• pp.697-702
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• 2009

Mesoporous ethanesilica thin film was prepared using PEO-PLGA-PEO triblock copolymers as structure-directing agents and (1,2-bis(triethoxysilyl) ethane BTESE; bridged organosilicates) as inorganic precursors via one-step sol-gel condensation of ethanesilica precursors. The mesostructure of ethanesilica films is critically dependent on the processing experimental parameters after the hydrolyzed silica sol mixture was spin-cast. This study examined the effects of the block copolymer template/organosilica precursor ratio in the casting solution and aging period before calcination of the mesostructure. It was further demonstrated that mesoscopic ordering of organosilicate thin films is induced by the rearrangement of block copolymer template/organosilica hybrid during thermal decomposition of the PEO-PLGA-PEO triblock copolymer. The mesoporous structure and morphology were characterized by SAXS, TEM and solid-state NMR measurement.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.23-24
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• 2006

We present a dispersive scheme of white-light interferometry that enables not only to perform tomographical measurements of thin-film layers but also to measure a refractive index without mechanical depth scanning. The interferometry is found useful particularly for in-situ 3-D inspection of micro-engineered surfaces such as liquid crystal displays, semi-conductor and MEMS structure, which requires for high-speed implementation of 3-D surface metrology.