• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권5호
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• pp.272-277
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• 2006

The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.

• Mass Spectrometry Letters
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• 제12권2호
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• 한국광학회지
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• 제31권6호
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• pp.321-327
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• 2020

기판 위에 코팅된 박막의 빛 반사 특성에 대해 연구하였다. 입사 매질로 굴절률이 큰 프리즘을 사용하여 박막/기판 계의 내부 전반사 현상과 공기/박막/기판 계가 이루는 도파로로 빛이 결합되어 들어가는 현상을 종합적으로 비교, 연구하였다. 박막의 굴절률이 기판의 굴절률보다 큰 경우에는 빛의 입사각을 증가시켜 나가면 먼저 기판에 의한 전반사가 일어나고, 그 이후 도파로 모드를 맞추는 좁은 각 영역에서 반사율이 떨어지는 현상을 볼 수 있으며, 이것을 이용하여 박막의 굴절률과 두께를 정확히 측정할 수 있다. 반면에 박막의 굴절률이 기판의 굴절률보다 작은 경우에는 도파로 모드가 존재하지 않는다. 이 경우 덩어리 매질에서처럼 뚜렷하지는 않지만 박막에 의한 전반사가 간섭무늬를 동반하여 나타난다. 본 연구에서는 프리즘/박막/기판 구조에서 일어나는 반사 현상을 전반적으로 관측하고 분석하여, 두 경우 모두 박막의 굴절률을 측정할 수 있는 가능성을 조사하였다.

• 비파괴검사학회지
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• 제12권1호
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• pp.9-15
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• 1992

Ultrasonic spectroscopy is likely to become a very powerful NDE method for detection of microfects and thickness measurement of thin film below the limit of ultrasonic distance resolution in the opaque materials, provides a useful information that cannot be obtained by a conventional ultrasonic measuring system. In this paper, we considered a thin film below the limit of ultrasonic distance resolution sandwitched between two substances as acoustical analysis model, demonstrated the usefulness of ultrasonic spectroscopic analysis technique using information of ultrasonic frequency for measurements of thin film thickness, regardless of interference phenomenon and phase reversion of ultrasonic waveform. By using frequency intervals(${\triangle}f$) of periodic minima from the ratio of reference power spectrum of reflective waveform obtained a sample to power spectrum of multiple reflective waves obtained interference phenomenon caused by ultrasonic waves reflected at the upper and lower surfaces of a thin layer, can measured even dimensions of interest are smaller than the ultrasonic wave length with simplicity and accuracy.

• 한국재료학회지
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• 제31권7호
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• pp.403-408
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• 2021

Various surface colors are predicted and implemented using the interference color generated by controlling the thickness of nano-level diamond like carbon (DLC) thin film. Samples having thicknesses of up to 385 nm and various interference colors are prepared using a single crystal silicon (100) substrate with changing processing times at low temperature by plasma-enhanced chemical vapor deposition. The thickness, surface roughness, color, phases, and anti-scratch performance under each condition are analyzed using a scanning electron microscope, colorimeter, micro-Raman device, and scratch tester. Coating with the same uniformity as the surface roughness of the substrate is possible over the entire experimental thickness range, and more than five different colors are implemented at this time. The color matched with the color predicted by the model, assuming only the reflection mode of the thin film. All the DLC thin films show constant D/G peak fraction without significant change, and have anti-scratch values of about 19 N. The results indicate the possibility that nano-level DLC thin films with various interference colors can be applied to exterior materials of actual mobile devices.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1370-1375
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• 2004

This article investigates the heat transfer characteristics in a RTA system for LCD manufacturing and suggests a way to evaluate the quality of a poly-Si film from the thin film optics analysis. The transient and one-dimensional conductive/radiative heat transfer equation considering wave interference effect is solved to predict surface temperatures of thin films. In dealing with radiative heat transfer, a one-dimensional two-flux method is used and the ray tracing method is also utilized to account for the wave interference effects. It is assumed that each interface is assumed diffusive but the spectral radiative properties are included. It is found that the selective heating region exists for various wavelengths and consequently may contribute to heat the poly-Si film. Using the formalism of the characteristic transmission matrix, the lumped structure reflectance, transmittance, and absorptance are calculated and they are compared with experimental data of the poly-Si film during the SPC process via the FE-RTA (Field-Enhanced RTA) technology.

• 대한전자공학회논문지SP
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• 제49권2호
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• pp.8-17
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• 2012

본 논문에서는 박막의 삼차원 형상을 신속하게 획득하기 위한 새로운 방법을 제안한다. 기존의 반사광 측정 장치에 기반한 박막 측정 장비들은 170포인트에 대한 두께를 측정하는데 약 30분 이상의 시간이 요구되므로 박막의 전체적인 형상 정보를 신속하게 파악하는데 적합하지 않다. 제안하는 방법은 Canny 경계검출기를 이용하여 간섭무늬 영상으로부터 등고선을 검출하는 영상 분석법을 기반으로 한다. 검출된 등고선에 대한 절대적인 두께를 측정하고 Borgefors 거리변환 알고리즘을 이용한 보간 처리를 통해 등고선으로부터 높이 맵 정보를 추출한다. 추출된 높이 맵은 DirectX를 사용하여 높이 맵 지형처리 기법으로 삼차원 형상화 된다. 제안된 방법은 적은 수를 가지는 등고선에 대한 높이 정보만을 실측하게 되므로 약 5분의 수행시간으로 박막의 전반적인 삼차원두께 패턴 정보를 얻을 수 있다.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1998년도 추계학술대회 논문집
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• pp.60-65
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• 1998

Recently, It is gradually raised necessity that thickness of thin film is measured accuracy and managed in industrial circles and medical world. Ultrasonic Signal processing method is likely to become a very powerful method for NDE method of detection of microdefects and thickness measurement of thin film below the limit of Ultrasonic distance resolution in the opaque materials, provides useful information that cannot be obtained by a conventional measuring system. In the present research, considering a thin film below the limit of Ultrasonic distance resolution sandwiched between three substances as acoustical analysis model, demonstrated the usefulness of ultrasonic Signal processing technique using information of ultrasonic frequency for NDE of measurements of thin film thickness, sound velocity, and step height, regardless of interference phenomenon

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.585-590
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• 2000

Recently, It is gradually raised necessity that thickness of thin film is measured accuracy and managed in industrial circles and medical world. Ultrasonic Signal processing method is likely to become a very powerful method for NDE method of detection of microdefects and thickness measurement of thin film below the limit of Ultrasonic distance resolution in the opaque materials, provides useful information that cannot be obtained by a conventional measuring system. In the present research, considering a thin film below the limit of ultrasonic distance resolution sandwiched between three substances as acoustical analysis model, demonstrated the usefulness of ultrasonic Signal processing technique using information of ultrasonic frequency for NDE of measurements of thin film thickness, sound velocity, and step height, regardless of interference phenomenon. Numeral information was deduced and quantified effective information from the image. Also, pattern recognition of a defected input image was performed by neural network algorithm. Input pattern of various numeral was composed combinationally, and then, it was studied by neural network. Furthermore, possibility of pattern recognition was confirmed on artifical defected input data formed by simulation. Finally, application on unknown input pattern was also examined.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.746-751
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• 1998

There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.